公开(公告)号：US10854630B2

公开(公告)日：2020-12-01

申请号：US16526139

申请日：2019-07-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-soo Kim ,  Yong-seok Kim ,  Tae-hun Kim ,  Min-kyung Bae ,  Jae-hoon Jang ,  Kohji Kanamori

IPC: H01L27/11582 ,  H01L29/08 ,  H01L29/78 ,  H01L27/11565

Abstract: A semiconductor device includes a plurality of channel structures on a substrate, each channel structure extending in a first direction perpendicular to the substrate, a common source extension structure including a first semiconductor layer having an n-type conductivity and a gate insulating layer between the substrate and the channel structures, a plurality of gate electrodes on the common source extension structure and spaced apart from each other on a sidewall of each of the channel structures in the first direction, and a common source region on the substrate in contact with the common source extension structure and including a second semiconductor layer having an n-type conductivity. An upper portion of the common source extension structure has a first width, and a lower portion of the common source extension structure has a second width smaller than the first width.

公开(公告)号：US12125538B2

公开(公告)日：2024-10-22

申请号：US17834024

申请日：2022-06-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-bo Shim ,  Ji-ho Cho ,  Yong-seok Kim ,  Byoung-taek Kim ,  Sun-gyung Hwang

IPC: G11C16/10 ,  G11C11/56 ,  G11C16/04 ,  G11C16/08 ,  G11C16/34 ,  H01L29/788 ,  G06F3/06 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/3427 ,  G11C16/3459 ,  H01L29/7885 ,  G06F3/0679 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.

公开(公告)号：US10971232B2

公开(公告)日：2021-04-06

申请号：US16553891

申请日：2019-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-bo Shim ,  Ji-ho Cho ,  Yong-seok Kim ,  Byoung-taek Kim ,  Sun-gyung Hwang

IPC: G11C16/04 ,  G11C16/10 ,  H01L29/788 ,  G11C16/34 ,  G11C16/08 ,  G11C11/56 ,  G06F3/06 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11582

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.

公开(公告)号：US10424381B2

公开(公告)日：2019-09-24

申请号：US15870989

申请日：2018-01-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-bo Shim ,  Ji-ho Cho ,  Yong-seok Kim ,  Byoung-taek Kim ,  Sun-gyung Hwang

IPC: G11C16/04 ,  G11C16/10 ,  H01L29/788 ,  G11C16/34 ,  G11C16/08 ,  G11C11/56 ,  G06F3/06 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11582

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.

公开(公告)号：US11355195B2

公开(公告)日：2022-06-07

申请号：US17220107

申请日：2021-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-bo Shim ,  Ji-ho Cho ,  Yong-seok Kim ,  Byoung-taek Kim ,  Sun-gyung Hwang

IPC: G11C16/04 ,  G11C16/10 ,  H01L29/788 ,  G11C16/34 ,  G11C16/08 ,  G11C11/56 ,  G06F3/06 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11582

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.

公开(公告)号：US10411033B2

公开(公告)日：2019-09-10

申请号：US15993756

申请日：2018-05-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-soo Kim ,  Yong-seok Kim ,  Tae-hun Kim ,  Min-kyung Bae ,  Jae-hoon Jang ,  Kohji Kanamori

IPC: H01L27/11582 ,  H01L29/08 ,  H01L29/78

Abstract: A semiconductor device includes a plurality of channel structures on a substrate, each channel structure extending in a first direction perpendicular to the substrate, and having a gate insulating layer and a channel layer, a common source extension region including a first semiconductor layer having an n-type conductivity between the substrate and the channel structures, a plurality of gate electrodes on the common source extension region and spaced apart from each other on a sidewall of each of the channel structures in the first direction, and a common source region on the substrate in contact with the common source extension region and including a second semiconductor layer having an n-type conductivity, wherein the gate insulating layer of each of the channel structures extends to cover an upper surface and at least a portion of a bottom surface of the common source extension region.