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公开(公告)号：US20240222468A1
公开(公告)日：2024-07-04
申请号：US18384008
申请日：2023-10-26
发明人： Se Woung OH , Hyung Dong KIM , Sang Mo KOO , Han Sung KIM , Young Dae CHO
IPC分类号： H01L29/66 , H01L29/06 , H01L29/40 , H01L29/417 , H01L29/423 , H01L29/775 , H01L29/786
CPC分类号： H01L29/66439 , H01L29/0673 , H01L29/401 , H01L29/4175 , H01L29/42392 , H01L29/6653 , H01L29/66545 , H01L29/66553 , H01L29/6656 , H01L29/775 , H01L29/78696
摘要： A method for fabricating a semiconductor device includes forming an active pattern on a substrate, forming sacrificial and semiconductor layers alternately stacked on the active pattern, forming a dummy gate and first source/drain trench on one side of the dummy gate by etching the stacked structure, forming a second source/drain trench on the active pattern by etching a sidewall of the sacrificial layer exposed to the first source/drain trench, forming a first inner spacer material layer along sidewall and bottom surfaces of the second source/drain trench, forming a second inner spacer material layer by anisotropic etching a first inner spacer material layer, and forming a third source/drain trench on the active pattern by isotropic etching.
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公开(公告)号：US20230307545A1
公开(公告)日：2023-09-28
申请号：US18204469
申请日：2023-06-01
发明人： Sung Uk JANG , Young Dae CHO , Ki Hwan KIM , Su Jin JUNG
IPC分类号： H01L29/78 , H01L29/08 , H01L29/786 , H01L29/423
CPC分类号： H01L29/7851 , H01L29/0847 , H01L29/78696 , H01L29/42392
摘要： A semiconductor device includes an active region extending in a first direction on a substrate, channel layers on the active region and spaced apart vertically, a gate structure intersecting the active region and the channel layers, the gate structure extending in a second direction and surrounding the channel layers, and a source/drain region on the active region at a side of the gate structure, the source/drain region contacting the channel layers, the source/drain region including first epitaxial layers having a first composition and including first layers on side surfaces of the channel layers and a second layer on the active region at a lower end of the source/drain region, and a second epitaxial layer having a second composition different from the first composition, the second epitaxial layer being between the first epitaxial layers in the first direction and being between the first epitaxial layers vertically in a third direction.
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3.发明申请公开(公告)号：US20190296144A1
公开(公告)日：2019-09-26
申请号：US16162510
申请日：2018-10-17
发明人： Su Jin JUNG , Jeong Ho YOO , Jong Ryeol YOO , Young Dae CHO
IPC分类号： H01L29/78 , H01L29/08 , H01L29/66 , H01L29/06 , H01L21/768 , H01L21/308 , H01L29/36
摘要： A semiconductor device and a method of manufacturing a semiconductor device, the device including an active pattern protruding from a substrate; a plurality of gate structures each including a gate electrode and crossing the active pattern; and a source/drain region between the plurality of gate structures, wherein the source/drain region includes a high concentration doped layer in contact with a bottom surface of a recessed region in the active pattern, a first epitaxial layer in contact with an upper surface of the high concentration doped layer and a sidewall of the recessed region, and a second epitaxial layer on the first epitaxial layer, and the high concentration doped layer has a first area in contact with the bottom surface of the recessed region and a second area in contact with the sidewall of the recessed region, the first area being wider than the second area.
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公开(公告)号：US20230037672A1
公开(公告)日：2023-02-09
申请号：US17692369
申请日：2022-03-11
发明人： Ki Hwan KIM , Jeong Ho YOO , Cho Eun LEE , Yong Uk JEON , Young Dae CHO
IPC分类号： H01L29/786 , H01L29/66 , H01L29/417
摘要： A semiconductor includes an active pattern with a lower pattern and sheet patterns spaced apart from the lower pattern in a first direction, a source/drain pattern on the lower pattern, the source/drain pattern being in contact with the sheet patterns, and gate structures on opposite sides of the source/drain pattern, the gate structures being spaced apart from each other along a second direction and including gate electrodes that surround the sheet patterns, wherein the source/drain pattern includes a first epitaxial region having at least one of antimony and bismuth, the first epitaxial region having a bottom part in contact with the lower pattern, but not with the sheet patterns, and a thickness of the bottom part increasing and decreasing away from the gate structures in the second direction, and a second epitaxial region on the first epitaxial region, the second epitaxial region including phosphorus.
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公开(公告)号：US20220102497A1
公开(公告)日：2022-03-31
申请号：US17546326
申请日：2021-12-09
发明人： Sung Uk JANG , Seung Hun LEE , Su Jin JUNG , Young Dae CHO
IPC分类号： H01L29/08 , H01L29/786 , H01L29/167 , H01L29/66 , H01L29/417 , H01L29/423
摘要： A semiconductor device including an active region defined in a substrate; at least one channel layer on the active region; a gate electrode intersecting the active region and on the active region and surrounding the at least one channel layer; and a pair of source/drain regions adjacent to both sides of the gate electrode, on the active region, and in contact with the at least one channel layer, wherein the pair of source/drain regions includes a selective epitaxial growth (SEG) layer, and a maximum width of each of the pair of source/drain regions in a first direction is 1.3 times or less a width of the active region in the first direction.
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公开(公告)号：US20200152740A1
公开(公告)日：2020-05-14
申请号：US16386459
申请日：2019-04-17
发明人： Sung Uk JANG , Seung Hun LEE , Su Jin JUNG , Young Dae CHO
IPC分类号： H01L29/08 , H01L29/786 , H01L29/423 , H01L29/66 , H01L29/417 , H01L29/167
摘要： A semiconductor device including an active region defined in a substrate; at least one channel layer on the active region; a gate electrode intersecting the active region and on the active region and surrounding the at least one channel layer; and a pair of source/drain regions adjacent to both sides of the gate electrode, on the active region, and in contact with the at least one channel layer, wherein the pair of source/drain regions includes a selective epitaxial growth (SEG) layer, and a maximum width of each of the pair of source/drain regions in a first direction is 1.3 times or less a width of the active region in the first direction.
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公开(公告)号：US20240063306A1
公开(公告)日：2024-02-22
申请号：US18498901
申请日：2023-10-31
发明人： Su Jin JUNG , Ki Hwan KIM , Sung Uk JANG , Young Dae CHO
IPC分类号： H01L29/786 , H01L21/02 , H01L29/06 , H01L29/423 , H01L29/66
CPC分类号： H01L29/78618 , H01L21/0259 , H01L29/0665 , H01L29/42392 , H01L29/66545 , H01L29/66553 , H01L29/66742 , H01L29/78696
摘要： A semiconductor device is provided. The semiconductor comprises an active pattern including a lower pattern and a plurality of sheet patterns that are spaced apart from the lower pattern in a first direction, a source/drain pattern on the lower pattern and in contact with the plurality of sheet patterns, and a gate structure on opposing sides of the source/drain pattern in a second direction different from the first direction, the gate structure including a gate electrode on the plurality of sheet patterns, wherein the source/drain pattern includes an epitaxial region that comprises a semiconductor material and a cavity region that is inside the epitaxial region and that is surrounded by the semiconductor material.
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公开(公告)号：US20220157990A1
公开(公告)日：2022-05-19
申请号：US17587402
申请日：2022-01-28
发明人： Sung Uk JANG , Ki Hwan KIM , Su Jin JUNG , Bong Soo KIM , Young Dae CHO
IPC分类号： H01L29/78 , H01L29/66 , H01L29/08 , H01L29/06 , H01L29/423 , H01L29/786 , H01L21/02 , H01L29/24
摘要： A semiconductor device including an active region extending in a first direction on a substrate; a gate structure intersecting the active region and extending in a second direction on the substrate; and a source/drain region on the active region and at least one side of the gate structure, wherein the source/drain region includes a plurality of first epitaxial layers spaced apart from each other in the first direction, the plurality of first epitaxial layers including first impurities of a first conductivity type; and a second epitaxial layer filling a space between the plurality of first epitaxial layers, the second epitaxial layer including second impurities of the first conductivity type.
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公开(公告)号：US20210296499A1
公开(公告)日：2021-09-23
申请号：US17337759
申请日：2021-06-03
发明人： Sung Uk JANG , Young Dae CHO , Ki Hwan KIM , Su Jin JUNG
IPC分类号： H01L29/78 , H01L29/08 , H01L29/786 , H01L29/423
摘要： A semiconductor device includes an active region extending in a first direction on a substrate, channel layers on the active region and spaced apart vertically, a gate structure intersecting the active region and the channel layers, the gate structure extending in a second direction and surrounding the channel layers, and a source/drain region on the active region at a side of the gate structure, the source/drain region contacting the channel layers, the source/drain region including first epitaxial layers having a first composition and including first layers on side surfaces of the channel layers and a second layer on the active region at a lower end of the source/drain region, and a second epitaxial layer having a second composition different from the first composition, the second epitaxial layer being between the first epitaxial layers in the first direction and being between the first epitaxial layers vertically in a third direction.
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公开(公告)号：US20200220018A1
公开(公告)日：2020-07-09
申请号：US16708717
申请日：2019-12-10
发明人： Sung Uk JANG , Young Dae CHO , Ki Hwan KIM , Su Jin JUNG
IPC分类号： H01L29/78 , H01L29/423 , H01L29/786 , H01L29/08
摘要： A semiconductor device includes an active region extending in a first direction on a substrate, channel layers on the active region and spaced apart vertically, a gate structure intersecting the active region and the channel layers, the gate structure extending in a second direction and surrounding the channel layers, and a source/drain region on the active region at a side of the gate structure, the source/drain region contacting the channel layers, the source/drain region including first epitaxial layers having a first composition and including first layers on side surfaces of the channel layers and a second layer on the active region at a lower end of the source/drain region, and a second epitaxial layer having a second composition different from the first composition, the second epitaxial layer being between the first epitaxial layers in the first direction and being between the first epitaxial layers vertically in a third direction.
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