Abstract:
A wafer inspection apparatus includes: an objective lens on an optical path of first and second input beams; and an image sensor configured to generate an image of the wafer based on scattered light according to a nonlinear optical phenomenon based on the first and second input beams, wherein the first input beam passing through the objective lens is obliquely incident on the wafer at a first incident angle with respect to a vertical line that is normal to an upper surface of the wafer, the second input beam passing through the objective lens is incident on the wafer at a second incident angle oblique to the vertical line that is normal to the upper surface of the wafer, and the first and second incident angles are different from each other.
Abstract:
Disclosed is a near field communication device which includes an antenna, a transmission amplifier, a matching circuit connected between the antenna and the transmission amplifier, and a transmitter. The transmitter transmits a transmit clock to the matching circuit through the transmission amplifier, extracts an extraction clock from a waveform formed in the matching circuit, stores a phase difference between the transmit clock and the extraction clock, and controls transmission of an information signal through the antenna, the transmission amplifier, and the matching circuit based on the phase difference.
Abstract:
A radio-frequency (RF) communication device having a near field communication (NFC) function includes a first detection mode circuit configured to output an RF input signal received by an antenna as a first RF signal while the first detection mode circuit is enabled, and a second detection mode circuit configured to amplify the RF input signal and output the amplified RF input signal as a second RF signal while the second detection mode circuit is enabled. The first detection mode circuit is enabled during a first time period, and the second detection mode circuit is enabled during a second time period. The second time period is shorter than the first time period. The first and second detection mode circuits are enabled alternately and repeatedly.
Abstract:
A bonding apparatus of substrate manufacturing equipment includes an upper stage, a lower stage facing the upper stage and which is configure and dedicated to support a processed substrate on which semiconductor chips are stacked (set), and an elevating mechanism for raising the lower stage relative to the upper stage to provide pressure for pressing the substrate and chips towards each other.
Abstract:
A contactless communication device is provided which includes a field strength detecting circuit configured to detect a strength of a field induced on an antenna; a card circuit configured to demodulate a signal received via the antenna during a reception interval of a card mode; a processing unit configured to process the demodulated signal; and a reader circuit configured to transmit data via the antenna during a transmission interval of the card mode, the data provided from the processing unit, wherein an output power of the reader circuit is adjusted according to the field strength detected.
Abstract:
A wafer inspection apparatus includes: an objective lens on an optical path of first and second input beams; and an image sensor configured to generate an image of the wafer based on scattered light according to a nonlinear optical phenomenon based on the first and second input beams, wherein the first input beam passing through the objective lens is obliquely incident on the wafer at a first incident angle with respect to a vertical line that is normal to an upper surface of the wafer, the second input beam passing through the objective lens is incident on the wafer at a second incident angle oblique to the vertical line that is normal to the upper surface of the wafer, and the first and second incident angles are different from each other.
Abstract:
Disclosed are a method of monitoring a semiconductor device fabrication process and a method of fabricating a semiconductor device using the same. The monitoring method may include determining a normalization range of a target byproduct, which is a measurement target of byproducts produced in a chamber by an etching process, the byproducts including the target byproduct and a non-target byproduct, the target byproduct including first and second target byproducts, which are respectively produced by and before the etching process on a to-be-processed layer, obtaining a first index from a ratio of the target byproduct to the non-target byproduct, obtaining a second index by subtracting an emission intensity of the second target byproduct from the first index, obtaining a third index by integrating the second index on a time interval, and estimating a result of the etching process and presence or absence of a failure, based on the third index.
Abstract:
A method includes connecting the first electronic device to a second electronic device, determining whether a transfer event occures on a first transfer area of a screen of the first device, transferring the input control authority of the first electronic device to the second electronic device in response to occurrence of the transfer event, and recovering the input control authority of the first electronic device from the second electronic device in response to occurrence of the transfer event on the second device. An electronic device includes a controller configured to transfer the input control authority of the electronic device to the external device in response to occurrence of the transfer event, and recover the input control authority of the electronic device from the external device in response to occurrence of the transfer event on a second transfer area of a second screen of the external device.
Abstract:
A semiconductor substrate measuring apparatus includes a light source to generate irradiation light having a sequence of on/off at a predetermined interval, the light source to provide the irradiation light to a chamber with an internal space for processing a semiconductor substrate using plasma, an optical device between the light source and the chamber, the optical device to split a first measurement light into a first optical path, condensed while the light source is turned on, to split a second measurement light into a second optical path, condensed while the light source is turned off, and to synchronize with the on/off sequence, and a photodetector connected to the first and second optical paths, the photodetector to subtract spectra of first and second measurement lights to detect spectrum of reflected light, and to detect plasma emission light emitted from the plasma based on the spectrum of the second measurement light.