公开(公告)号：US20200207790A1

公开(公告)日：2020-07-02

申请号：US16564125

申请日：2019-09-09

Applicant: Samsung Electronics Co., Ltd. ,  Adeka Corporation

Inventor： Gyu-Hee Park ,  Takanori Koide ,  Yoshiki Manabe ,  Masayuki Kimura ,  Akio Saito ,  Jaesoon Lim ,  Younjoung Cho

IPC: C07F5/06 ,  C09D1/00 ,  C09D5/00 ,  H01L21/02 ,  C23C16/20

Abstract: Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1.

公开(公告)号：US11332486B2

公开(公告)日：2022-05-17

申请号：US16564125

申请日：2019-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  ADEKA CORPORATION

Inventor： Gyu-Hee Park ,  Takanori Koide ,  Yoshiki Manabe ,  Masayuki Kimura ,  Akio Saito ,  Jaesoon Lim ,  Younjoung Cho

IPC: C07F5/06 ,  C09D1/00 ,  C09D5/00 ,  C23C16/20 ,  H01L21/02

Abstract: Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1.

公开(公告)号：US20180363131A1

公开(公告)日：2018-12-20

申请号：US15855368

申请日：2017-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soyoung Lee ,  Jaesoon Lim ,  Jieun Yun ,  Akio Saito ,  Tsubasa Shiratori ,  Yutaro Aoki

IPC: C23C16/30 ,  C07F11/00

Abstract: Disclosed is a tungsten precursor and a method of forming a tungsten-containing layer. The tungsten precursor has a structure represented by Formula 1 below. In Formula 1, R1, R2, and R3 independently include a straight-chained or a branched alkyl group including a substituted or an unsubstituted C1-C5; R4 and R5 independently include a straight-chained or a branched alkyl group including a C1-C5, halogen element, dialkylamino group having C2-C10, or trialkylsilyl group including a C3-C12; n is 1 or 2, and m is 0 or 1. Also, n+m=2 (e.g., when n is 1, m is 1). When n is 2, m is 0 and each of R1 and R2 are provided in two. Two R1s are independently of each other, and two R2s are independently of each other.

公开(公告)号：US11678476B2

公开(公告)日：2023-06-13

申请号：US17222006

申请日：2021-04-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheoljin Cho ,  Jaesoon Lim ,  Jaehyoung Choi ,  Jungmin Park

IPC: H10B12/00 ,  H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10805 ,  H01L28/55 ,  H01L28/65

Abstract: A capacitor and a DRAM device, the capacitor including a lower electrode; a dielectric layer structure on the lower electrode, the dielectric layer structure including a first zirconium oxide layer, a hafnium oxide layer, and a second zirconium oxide layer sequentially stacked; and an upper electrode on the dielectric layer structure, wherein the hafnium oxide layer has a tetragonal crystal phase or an orthorhombic crystal phase.

公开(公告)号：US11524973B2

公开(公告)日：2022-12-13

申请号：US16857292

申请日：2020-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Min Ryu ,  Akio Saito ,  Takanori Koide ,  Atsushi Yamashita ,  Kazuki Harano ,  Gyu-Hee Park ,  Soyoung Lee ,  Jaesoon Lim ,  Younjoung Cho

IPC: C07F9/00 ,  H01L21/285 ,  H01L51/00 ,  H01L49/02

Abstract: Described herein are metal compounds and methods of fabricating semiconductor devices using the same. The metal compounds include a material of Chemical Formula 1.

公开(公告)号：US10900119B2

公开(公告)日：2021-01-26

申请号：US15855368

申请日：2017-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soyoung Lee ,  Jaesoon Lim ,  Jieun Yun ,  Akio Saito ,  Tsubasa Shiratori ,  Yutaro Aoki

IPC: C23C16/30 ,  C07F11/00 ,  C23C16/455 ,  C23C16/40

Abstract: Disclosed is a tungsten precursor and a method of forming a tungsten-containing layer. The tungsten precursor has a structure represented by Formula 1 below. In Formula 1, R1, R2, and R3 independently include a straight-chained or a branched alkyl group including a substituted or an unsubstituted C1-C5; R4 and R5 independently include a straight-chained or a branched alkyl group including a C1-C5, halogen element, dialkylamino group having C2-C10, or trialkylsilyl group including a C3-C12; n is 1 or 2, and m is 0 or 1. Also, n+m=2 (e.g., when n is 1, m is 1). When n is 2, m is 0 and each of R1 and R2 are provided in two. Two R1s are independently of each other, and two R2s are independently of each other.

公开(公告)号：US11466043B2

公开(公告)日：2022-10-11

申请号：US16881283

申请日：2020-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soyoung Lee ,  Seungmin Ryu ,  Gyuhee Park ,  Jaesoon Lim ,  Younjoung Cho ,  Akio Saito ,  Wakana Fuse ,  Yutaro Aoki ,  Takanori Koide

IPC: C07F17/00 ,  C09D1/00 ,  C01B21/06 ,  H01L21/28 ,  H01L49/02 ,  H01L21/285

Abstract: A niobium compound and a method of forming a thin film using the niobium compound, the compound being represented by the following General formula I: wherein, in General formula I, R1, R4, R5, R6, R7, and R8 are each independently a hydrogen atom, a C1-C6 linear or branched alkyl group or a C3-C6 cyclic hydrocarbon group, at least one of R4, R5, R6, R7, and R8 being a C1-C6 linear or branched alkyl group, and R2 and R3 are each independently a hydrogen atom, a halogen atom, a C1-C6 linear or branched alkyl group, or a C3-C6 cyclic hydrocarbon group.

公开(公告)号：US11254698B2

公开(公告)日：2022-02-22

申请号：US16702791

申请日：2019-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soyoung Lee ,  Hiroshi Nihei ,  Takamasa Miyazaki ,  Yousuke Satou ,  Kouhei Sugimoto ,  Masashi Shirai ,  Jaesoon Lim ,  Younsoo Kim ,  Younjoung Cho

IPC: C23C16/18 ,  H01L21/02 ,  H01L21/3213 ,  C07F15/06 ,  C23C16/455

Abstract: The inventive concept relates to a cobalt precursor, a method for manufacturing a cobalt-containing layer using the same, and a method for manufacturing a semiconductor device using the same. More particularly, the cobalt precursor of the inventive concept includes at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2.

公开(公告)号：US12029027B2

公开(公告)日：2024-07-02

申请号：US18205715

申请日：2023-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheoljin Cho ,  Jaesoon Lim ,  Jaehyoung Choi ,  Jungmin Park

IPC: H10B12/00 ,  H01L49/02

CPC classification number: H10B12/30 ,  H01L28/55 ,  H01L28/65

Abstract: A capacitor and a DRAM device, the capacitor including a lower electrode; a dielectric layer structure on the lower electrode, the dielectric layer structure including a first zirconium oxide layer, a hafnium oxide layer, and a second zirconium oxide layer sequentially stacked; and an upper electrode on the dielectric layer structure, wherein the hafnium oxide layer has a tetragonal crystal phase or an orthorhombic crystal phase.

公开(公告)号：US11081389B2

公开(公告)日：2021-08-03

申请号：US16711845

申请日：2019-12-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-min Ryu ,  Younsoo Kim ,  Gyu-hee Park ,  Jaesoon Lim ,  Younjoung Cho

IPC: H01L21/768 ,  H01L21/285 ,  H01L27/108 ,  H01L21/8238

Abstract: A method of manufacturing a semiconductor device, the method including providing a metal precursor on a substrate to form a preliminary layer that includes a first metal; providing a reducing agent on the preliminary layer, the reducing agent including a compound that includes a second metal; and providing a reactant on the preliminary layer to form a metal-containing layer, wherein the second metal has multiple oxidation states, the second metal in the reducing agent having a lower oxidation state among the multiple oxidation states prior to providing the reducing agent on the preliminary layer.