公开(公告)号：US11332486B2

公开(公告)日：2022-05-17

申请号：US16564125

申请日：2019-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  ADEKA CORPORATION

Inventor： Gyu-Hee Park ,  Takanori Koide ,  Yoshiki Manabe ,  Masayuki Kimura ,  Akio Saito ,  Jaesoon Lim ,  Younjoung Cho

IPC: C07F5/06 ,  C09D1/00 ,  C09D5/00 ,  C23C16/20 ,  H01L21/02

Abstract: Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1.

公开(公告)号：US20200207790A1

公开(公告)日：2020-07-02

申请号：US16564125

申请日：2019-09-09

Applicant: Samsung Electronics Co., Ltd. ,  Adeka Corporation

Inventor： Gyu-Hee Park ,  Takanori Koide ,  Yoshiki Manabe ,  Masayuki Kimura ,  Akio Saito ,  Jaesoon Lim ,  Younjoung Cho

IPC: C07F5/06 ,  C09D1/00 ,  C09D5/00 ,  H01L21/02 ,  C23C16/20

Abstract: Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1.

公开(公告)号：US12051586B2

公开(公告)日：2024-07-30

申请号：US17022198

申请日：2020-09-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-Min Ryu ,  Jiyu Choi ,  Gyu-Hee Park ,  Younjoung Cho

IPC: H01L21/02 ,  C01G19/00 ,  C07C211/08 ,  C23C16/08 ,  C23C16/18 ,  C23C16/30 ,  C23C16/455

CPC classification number: H01L21/02205 ,  C01G19/00 ,  C07C211/08 ,  C23C16/08 ,  C23C16/18 ,  C23C16/303 ,  C23C16/45553

Abstract: A method of manufacturing a semiconductor device includes providing a metal precursor on a substrate, and providing a reactant and a co-reactant to form a metal nitride layer by reaction with the metal precursor, the reactant being a nitrogen source, the co-reactant being an organometallic compound represented by Chemical Formula 1:

M2L1)n  [Chemical Formula 1]

In Chemical Formula 1, M2 may be selected from Sn, In, and Ge, n may be 2, 3, or 4, and each L1 may independently be hydrogen, a halogen, or a group represented by Chemical Formula 2.





In Chemical Formula 2, x may be 0, 1, 2, 3, 4, or 5 and y may be 0 or 1. When x is 0, y may be 1. R1, R2, R3, and R4 may each independently be hydrogen, an alkyl group having 1 to 5 carbons, or an aminoalkyl group having 1 to 5 carbons.

公开(公告)号：US20230304155A1

公开(公告)日：2023-09-28

申请号：US18189751

申请日：2023-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunhye HWANG ,  Sung Gi Kim ,  Jihyun Lee ,  Yujin Cho ,  Seung Son ,  Gyun Sang Lee ,  Younjoung Cho ,  Byungkeun Hwang

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44

CPC classification number: C23C16/45553 ,  C23C16/401 ,  C23C16/4408 ,  C23C16/45527

Abstract: Provided is a precursor for depositing a silicon-containing layer, the silicon precursor having a heterocyclic group, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1.




In Formula 1, A1 is a heterocyclic group including one or more nitrogen, and R1 is hydrogen or an alkyl group of 1˜6 carbon atoms. R2 may be an alkyl group of 1˜6 carbon atoms. R3 may be an alkyl group of 1˜6 carbon atoms.

公开(公告)号：US20150303060A1

公开(公告)日：2015-10-22

申请号：US14602671

申请日：2015-01-22

Applicant: Samsung Electronics Co., Ltd. ,  Dow Corning Corporation

Inventor： JunHyun Cho ,  Michael David Telgenhoff ,  Xiaobing Zhou ,  Kyunghye Jung ,  Younjoung Cho

IPC: H01L21/02 ,  H01L27/115

CPC classification number: H01L27/10855 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/28562 ,  H01L21/32055 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76897 ,  H01L27/108 ,  H01L27/10814 ,  H01L27/11556

Abstract: The inventive concepts provide silicon precursors, methods of forming a layer using the same, and methods of fabricating a semiconductor device using the same. The silicon precursor includes a silane group including two or more silicon atoms. The silicon precursor has a high and uniform adsorption property on surfaces of layers (e.g., a silicon layer, an oxide layer, and a nitride layer) that are mainly used when semiconductor devices are fabricated.

Abstract translation: 本发明构思提供了硅前体，使用其形成层的方法，以及制造使用其的半导体器件的方法。 硅前体包括包含两个或多个硅原子的硅烷基团。 硅前体在制造半导体器件时主要使用的层（例如，硅层，氧化物层和氮化物层）的表面上具有高且均匀的吸附性能。

公开(公告)号：US20240429039A1

公开(公告)日：2024-12-26

申请号：US18597101

申请日：2024-03-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Hyea Ko ,  Soyoung Lee ,  Hoon Han ,  Byungkeun Hwang ,  Jaewoon Kim ,  Younghun Sung ,  Younjoung Cho

IPC: H01L21/02 ,  C09D5/00 ,  C09D5/26 ,  C09D175/02 ,  C23C16/56 ,  H01L21/285 ,  H01L21/3105

Abstract: Methods of depositing a film are provided. The methods may include providing a substrate that includes a first surface and a second surface adjacent to the first surface; forming a polymer sacrificial layer on the first surface by using a molecular layer deposition (MLD) process; forming a first film on the second surface; and removing the polymer sacrificial layer formed on the first surface. A functional group density of the first surface may be higher than a functional group density of the second surface, and the polymer sacrificial layer may include a thermally decomposable polymer.

公开(公告)号：US11524973B2

公开(公告)日：2022-12-13

申请号：US16857292

申请日：2020-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Min Ryu ,  Akio Saito ,  Takanori Koide ,  Atsushi Yamashita ,  Kazuki Harano ,  Gyu-Hee Park ,  Soyoung Lee ,  Jaesoon Lim ,  Younjoung Cho

IPC: C07F9/00 ,  H01L21/285 ,  H01L51/00 ,  H01L49/02

Abstract: Described herein are metal compounds and methods of fabricating semiconductor devices using the same. The metal compounds include a material of Chemical Formula 1.

公开(公告)号：US10883173B2

公开(公告)日：2021-01-05

申请号：US16200149

申请日：2018-11-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeonock Han ,  Wonwoong Chung ,  Keum Seok Park ,  Pankwi Park ,  Jeongho Yoo ,  Younjoung Cho ,  Byung Koo Kong ,  Mijeong Kim ,  Jin Wook Lee ,  Changeun Jang

IPC: F17C1/00 ,  F17C13/02 ,  C23C16/448 ,  H01L21/02

Abstract: A method of manufacturing a semiconductor device includes disposing a gas-storage cylinder storing monochlorosilane within a gas supply unit. The monochlorosilane is supplied from the gas-storage cylinder into a process chamber to form a silicon containing layer therein. The gas-storage cylinder includes manganese.

公开(公告)号：US11466043B2

公开(公告)日：2022-10-11

申请号：US16881283

申请日：2020-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soyoung Lee ,  Seungmin Ryu ,  Gyuhee Park ,  Jaesoon Lim ,  Younjoung Cho ,  Akio Saito ,  Wakana Fuse ,  Yutaro Aoki ,  Takanori Koide

IPC: C07F17/00 ,  C09D1/00 ,  C01B21/06 ,  H01L21/28 ,  H01L49/02 ,  H01L21/285

Abstract: A niobium compound and a method of forming a thin film using the niobium compound, the compound being represented by the following General formula I: wherein, in General formula I, R1, R4, R5, R6, R7, and R8 are each independently a hydrogen atom, a C1-C6 linear or branched alkyl group or a C3-C6 cyclic hydrocarbon group, at least one of R4, R5, R6, R7, and R8 being a C1-C6 linear or branched alkyl group, and R2 and R3 are each independently a hydrogen atom, a halogen atom, a C1-C6 linear or branched alkyl group, or a C3-C6 cyclic hydrocarbon group.

公开(公告)号：US11254698B2

公开(公告)日：2022-02-22

申请号：US16702791

申请日：2019-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soyoung Lee ,  Hiroshi Nihei ,  Takamasa Miyazaki ,  Yousuke Satou ,  Kouhei Sugimoto ,  Masashi Shirai ,  Jaesoon Lim ,  Younsoo Kim ,  Younjoung Cho

IPC: C23C16/18 ,  H01L21/02 ,  H01L21/3213 ,  C07F15/06 ,  C23C16/455

Abstract: The inventive concept relates to a cobalt precursor, a method for manufacturing a cobalt-containing layer using the same, and a method for manufacturing a semiconductor device using the same. More particularly, the cobalt precursor of the inventive concept includes at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2.