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1.发明授权公开(公告)号：US11386961B2
公开(公告)日：2022-07-12
申请号：US16722538
申请日：2019-12-20
Applicant: SanDisk Technologies LLC
Inventor： YenLung Li , Chen Chen , Min Peng , Mitsuyuki Watanabe
Abstract: In a non-volatile memory circuit, performance is improved by converting data between a serial format, for transfer on and off of the memory circuit, and a parallel format, for transfer to and from the memory latches used for read and writing data into the memory array of the memory circuit. The memory array is split into M+N divisions, but transferred with a degree of parallelism of M, allowing M words of data to be transferred in parallel at a fixed transfer rate while allowing for up to N bad columns in a transfer. In the write path, a column skipping mechanism is used when converting words of write data into a parallel format. In the read path, a set of (M+N) to 1 multiplexers is used to align the word of read data so that read data can be transferred at a fixed rate and without any added latency.
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2.发明申请公开(公告)号：US20210193226A1
公开(公告)日：2021-06-24
申请号：US16722538
申请日：2019-12-20
Applicant: SanDisk Technologies LLC
Inventor： YenLung Li , Chen Chen , Min Peng , Mitsuyuki Watanabe
Abstract: In a non-volatile memory circuit, performance is improved by converting data between a serial format, for transfer on and off of the memory circuit, and a parallel format, for transfer to and from the memory latches used for read and writing data into the memory array of the memory circuit. The memory array is split into M+N divisions, but transferred with a degree of parallelism of M, allowing M words of data to be transferred in parallel at a fixed transfer rate while allowing for up to N bad columns in a transfer. In the write path, a column skipping mechanism is used when converting words of write data into a parallel format. In the read path, a set of (M+N) to 1 multiplexers is used to align the word of read data so that read data can be transferred at a fixed rate and without any added latency.
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3.发明授权Centralized variable rate serializer and deserializer for bad column management 有权集中可变速率序列化器和解串器，用于色谱柱管理不良公开(公告)号：US09583220B2
公开(公告)日：2017-02-28
申请号：US15194867
申请日：2016-06-28
Applicant: SANDISK TECHNOLOGIES LLC
Inventor： Wanfang Tsai , YenLung Li , Chen Chen
CPC classification number: G11C29/82 , G11C16/0483 , G11C16/10 , G11C16/16 , G11C16/26 , G11C16/3404 , G11C29/808 , G11C2207/107
Abstract: A memory circuit includes an array subdivided into multiple divisions, each connectable to a corresponding set of access circuitry. A serializer/deserializer circuit is connected to a data bus and the access circuitry to convert data between a (word-wise) serial format on the bus and (multi-word) parallel format for the access circuitry. Column redundancy circuitry is connect to the serializer/deserializer circuit to provide defective column information about the array. In converting data from a serial to a parallel format, the serializer/deserializer circuit skips words of the data in the parallel format based on the defective column information indicating that the location corresponds to a defective column. In converting data from a parallel to a serial format the serializer/deserializer circuit skips words of the data in the parallel format based on the defective column information indicating that the location corresponds to a defective column.
Abstract translation: 存储器电路包括细分成多个分区的阵列，每个分区可连接到对应的一组接入电路。 串行器/解串器电路连接到数据总线和访问电路，用于在总线上的（逐字）串行格式和用于访问电路的（多字）并行格式之间转换数据。 列冗余电路连接到串行器/解串器电路，以提供关于阵列的有缺陷的列信息。 在将数据从串行格式转换为并行格式时，串行器/解串器电路基于指示位置对应于缺陷列的缺陷列信息，以并行格式跳过数据字。 在将数据从并行转换为串行格式时，串行器/解串器电路基于指示该位置对应于缺陷列的缺陷列信息，以并行格式跳过数据字。
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公开(公告)号：US11907545B2
公开(公告)日：2024-02-20
申请号：US17731971
申请日：2022-04-28
Applicant: SanDisk Technologies LLC
Inventor： YenLung Li , Siddarth Naga Murty Bassa , Chen Chen , Hua-Ling Cynthia Hsu
IPC: G06F3/06
CPC classification number: G06F3/0619 , G06F3/0617 , G06F3/0656 , G06F3/0658 , G06F3/0679
Abstract: For a non-volatile memory that uses hard bit and soft bit data in error correction operations, to reduce the amount of soft bit data that needs to be transferred from a memory to the controller and improve memory system performance, the soft bit data can be compressed before transfer. After the soft bit data is read and stored into the internal data latches associated with the sense amplifiers, it is compressed within these internal data latches. The compressed soft bit data can then be transferred to the transfer data latches of a cache buffer, where the compressed soft bit data can be consolidated and transferred out over an input-output interface. Within the input-output interface, the compressed data can be reshuffled to put into logical user data order if needed.
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公开(公告)号：US20230095127A1
公开(公告)日：2023-03-30
申请号：US17731971
申请日：2022-04-28
Applicant: SanDisk Technologies LLC
Inventor： YenLung Li , Siddarth Naga Murty Bassa , Chen Chen , Hua-Ling Cynthia Hsu
IPC: G06F3/06
Abstract: For a non-volatile memory that uses hard bit and soft bit data in error correction operations, to reduce the amount of soft bit data that needs to be transferred from a memory to the controller and improve memory system performance, the soft bit data can be compressed before transfer. After the soft bit data is read and stored into the internal data latches associated with the sense amplifiers, it is compressed within these internal data latches. The compressed soft bit data can then be transferred to the transfer data latches of a cache buffer, where the compressed soft bit data can be consolidated and transferred out over an input-output interface. Within the input-output interface, the compressed data can be reshuffled to put into logical user data order if needed.
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Patent Agency Ranking
公开(公告)号：US11901019B2
公开(公告)日：2024-02-13
申请号：US17666657
申请日：2022-02-08
Applicant: SANDISK TECHNOLOGIES LLC
Inventor： Hua-Ling Cynthia Hsu , Masaaki Higashitani , YenLung Li , Chen Chen
CPC classification number: G11C16/26 , G11C16/0483 , G11C16/24 , H03M13/1111 , H03M13/611
Abstract: For a non-volatile memory that uses hard bit and soft bit data in error correction operations, to reduce the amount of soft bit data that needs to be transferred from a memory to the controller and improve memory system performance, the soft bit data can be compressed before transfer. After the soft bit data is read and stored into the internal data latches associated with the sense amplifiers, it is compressed within these internal data latches. The compressed soft bit data can then be transferred to the transfer data latches of a cache buffer, where the compressed soft bit data can be consolidated and transferred out over an input-output interface. Within the input-output interface, the compressed data can be reshuffled to put into logical user data order if needed.
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公开(公告)号：US10825526B1
公开(公告)日：2020-11-03
申请号：US16450042
申请日：2019-06-24
Applicant: SanDisk Technologies LLC
Inventor： YenLung Li , Hua-Ling Cynthia Hsu , Chen Chen , Min Peng
Abstract: In non-volatile memory circuit, the area devoted to the cache buffer of the read and write circuitry is reduced through the sharing of data latches. In an array structure where memory cells are connected along bit lines, and the bit lines organized into columns, each of the columns has an associated set of data latches, including one or more data latches for each bit line of the column. Data is transferred in and out of the read and write circuit on a data bus, where data is transferred between the data latches and the data bus through a set of transfers latches. The area used by the latch structure is reduced by sharing the transfer latches of the read and write circuitry between the data latches of multiple columns.
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公开(公告)号：US10811082B1
公开(公告)日：2020-10-20
申请号：US16450058
申请日：2019-06-24
Applicant: SanDisk Technologies LLC
Inventor： YenLung Li , Hua-Ling Cynthia Hsu , Chen Chen , Min Peng
IPC: G11C7/18 , G11C11/409 , G06F3/06
Abstract: In a non-volatile memory circuit, read and write performance is improved by increasing the transfer rate of data through the cache buffer during read and write operations. In an array structure where memory cells are connected along bit lines, and the bit lines organized into columns, pairs of data words are stored interleaved on the bit lines of a pair of columns. Data is transferred in and out of the read and write circuit on an internal bus structure, where part of the transfer of one word stored on a pair of columns can overlap with part of the transfer of another word, accelerating transfer times for both read and write.
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9.发明授权Centralized variable rate serializer and deserializer for bad column management 有权集中可变速率序列化器和解串器，用于色谱柱管理不良公开(公告)号：US09490035B2
公开(公告)日：2016-11-08
申请号：US14104817
申请日：2013-12-12
Applicant: SANDISK TECHNOLOGIES LLC
Inventor： Wanfang Tsai , YenLung Li , Chen Chen
CPC classification number: G11C29/82 , G11C16/0483 , G11C16/10 , G11C16/16 , G11C16/26 , G11C16/3404 , G11C29/808 , G11C2207/107
Abstract: A memory circuit includes an array subdivided into multiple divisions, each connectable to a corresponding set of access circuitry. A serializer/deserializer circuit is connected to a data bus and the access circuitry to convert data between a (word-wise) serial format on the bus and (multi-word) parallel format for the access circuitry. Column redundancy circuitry is connect to the serializer/deserializer circuit to provide defective column information about the array. In converting data from a serial to a parallel format, the serializer/deserializer circuit skips words of the data in the parallel format based on the defective column information indicating that the location corresponds to a defective column. In converting data from a parallel to a serial format the serializer/deserializer circuit skips words of the data in the parallel format based on the defective column information indicating that the location corresponds to a defective column.
Abstract translation: 存储器电路包括细分成多个分区的阵列，每个分区可连接到对应的一组接入电路。 串行器/解串器电路连接到数据总线和访问电路，用于在总线上的（逐字）串行格式和用于访问电路的（多字）并行格式之间转换数据。 列冗余电路连接到串行器/解串器电路，以提供关于阵列的有缺陷的列信息。 在将数据从串行格式转换为并行格式时，串行器/解串器电路基于指示位置对应于缺陷列的缺陷列信息，以并行格式跳过数据字。 在将数据从并行转换为串行格式时，串行器/解串器电路基于指示该位置对应于缺陷列的缺陷列信息，以并行格式跳过数据字。
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公开(公告)号：US20230081623A1
公开(公告)日：2023-03-16
申请号：US17666657
申请日：2022-02-08
Applicant: SANDISK TECHNOLOGIES LLC
Inventor： Hua-Ling Cynthia Hsu , Masaaki Higashitani , YenLung Li , Chen Chen
Abstract: For a non-volatile memory that uses hard bit and soft bit data in error correction operations, to reduce the amount of soft bit data that needs to be transferred from a memory to the controller and improve memory system performance, the soft bit data can be compressed before transfer. After the soft bit data is read and stored into the internal data latches associated with the sense amplifiers, it is compressed within these internal data latches. The compressed soft bit data can then be transferred to the transfer data latches of a cache buffer, where the compressed soft bit data can be consolidated and transferred out over an input-output interface. Within the input-output interface, the compressed data can be reshuffled to put into logical user data order if needed.
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