公开(公告)号：US20180240966A1

公开(公告)日：2018-08-23

申请号：US15440129

申请日：2017-02-23

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Goran Mihajlovic ,  Neil Smith ,  Jordan Asher Katine ,  Neil Leslie Robertson

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/165 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

Abstract: An MRAM memory cell is proposed that is based on spin accumulation torque. One embodiment includes a magnetic tunnel junction, a spin accumulation layer connected to the magnetic tunnel junction and a polarization layer connected to the spin accumulation layer. The polarization layer and the spin accumulation layer use spin accumulation to provide a spin accumulation torque on the free magnetic layer of the magnetic tunnel junction to change direction of magnetization of the free magnetic layer.

公开(公告)号：US10229723B1

公开(公告)日：2019-03-12

申请号：US15701761

申请日：2017-09-12

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Young-Suk Choi ,  Brian York ,  Neil Smith

IPC: G11C11/22 ,  G11C11/16 ,  G11C11/18 ,  H01L43/10 ,  H01L43/06 ,  H01L43/04 ,  H01L43/08

Abstract: A spin orbit torque magnetoresistive random access memory (SOT MRAM) cell includes a magnetic tunnel junction that contains a free layer having two bi-stable magnetization directions, a reference magnetic layer having a fixed magnetization direction, and a tunnel barrier layer located between the free layer and the reference layer, and a nonmagnetic spin Hall effect layer. The spin Hall effect layer may include an alternating stack of beta phase tungsten layers and noble metal nonmagnetic dusting layers. Alternatively or in addition, a hafnium layer may be located between the nonmagnetic spin Hall effect layer and the free layer.

公开(公告)号：US10211393B2

公开(公告)日：2019-02-19

申请号：US15440129

申请日：2017-02-23

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Goran Mihajlovic ,  Neil Smith ,  Jordan Asher Katine ,  Neil Leslie Robertson

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16 ,  G11C11/18

Abstract: An MRAM memory cell is proposed that is based on spin accumulation torque. One embodiment includes a magnetic tunnel junction, a spin accumulation layer connected to the magnetic tunnel junction and a polarization layer connected to the spin accumulation layer. The polarization layer and the spin accumulation layer use spin accumulation to provide a spin accumulation torque on the free magnetic layer of the magnetic tunnel junction to change direction of magnetization of the free magnetic layer.

公开(公告)号：US10134457B1

公开(公告)日：2018-11-20

申请号：US15692920

申请日：2017-08-31

Applicant: SanDisk Technologies LLC

Inventor： Goran Mihajlovic ,  Jordan Katine ,  Neil Robertson ,  Neil Smith

IPC: G11C11/00 ,  G11C11/16 ,  H01L27/22

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A plurality of read lines are in a read line layer, and a plurality of write lines are in a write line layer. A plurality of spin accumulation lines are in a spin accumulation line layer disposed between a read line layer and a write line layer. Spin accumulation lines may horizontally cross read lines and write lines. A plurality of vertical magnetoresistive random access memory (MRAM) cells may include polarizers and magnetic tunnel junctions. A vertical MRAM cell may include a polarizer coupled between a spin accumulation line and a write line. A vertical MRAM cell may further include a magnetic tunnel junction coupled between a spin accumulation line and a read line, such that the magnetic tunnel junction and the polarizer are vertically aligned.