公开(公告)号：US20240147723A1

公开(公告)日：2024-05-02

申请号：US18351181

申请日：2023-07-12

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Motoo OHAGA ,  Tadashi NAKAMURA ,  Takashi YUDA ,  Nobuyuki FUJIMURA ,  Hiroyuki OGAWA

IPC: H10B43/27 ,  G11C16/04 ,  H01L23/522 ,  H01L23/528 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35

CPC classification number: H10B43/27 ,  G11C16/0483 ,  H01L23/5226 ,  H01L23/5283 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35

Abstract: A memory device includes source-level material layers including a source contact layer, an alternating stack of insulating layers and electrically conductive layers located over the source-level material layers, a memory opening vertically extending through the alternating stack and the source contact layer, and a memory opening fill structure located in the memory opening and including a vertical semiconductor channel including an intrinsic or first conductivity type semiconductor material, a memory film surrounding the vertical semiconductor channel, and a conical source pedestal in contact with the source contact layer and in contact with a bottom surface of the vertical semiconductor channel, such that at least portion of the conical source pedestal includes a second conductivity type semiconductor material.

公开(公告)号：US20240292627A1

公开(公告)日：2024-08-29

申请号：US18659312

申请日：2024-05-09

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Takuya MUROOKA ,  Peng ZHANG ,  Kazuki ISOZUMI ,  Shinsuke YADA ,  Motoo OHAGA ,  Satoshi SHIMIZU

IPC: H10B43/35 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27

CPC classification number: H10B43/35 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27

Abstract: A memory device includes at least one alternating stack of insulating layers and electrically conductive layers overlying a source layer, a memory opening vertically extending through the at least one alternating stack, and a memory opening fill structure located in the memory opening and containing a vertical stack of memory elements and a vertical semiconductor channel. The memory opening fill structure includes a lateral protrusion having a tapered sidewall surface such that a lateral extent of the lateral protrusion decreases with a vertical distance from the source layer. One of the electrically conductive layers of the at least one alternating stack is a taper-containing electrically conductive layer that is located at a level of the lateral protrusion of the memory opening fill structure.