公开(公告)号：US20210090992A1

公开(公告)日：2021-03-25

申请号：US16582262

申请日：2019-09-25

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Li LI ,  Yuki KASAI ,  Tatsuya HINOUE

IPC: H01L23/522 ,  H01L27/1157 ,  H01L27/11565 ,  H01L27/11582

Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. Memory openings are formed through the alternating stack. Annular recesses are formed by laterally recessing the sacrificial material layers around each memory opening. A tubular aluminum oxide spacer is formed at a periphery of each annular recess. A tubular silicon oxycarbide spacer is selectively deposited on each of the tubular aluminum oxide spacers. The tubular silicon oxycarbide spacers are converted into tubular silicon oxide spacers by an oxidation process. Tubular charge storage spacers are formed on inner sidewalls of the tubular silicon oxide spacers. A vertical semiconductor channel is formed over a respective vertical stack of tubular charge storage spacer within each memory opening. The sacrificial material layers are removed to form backside recesses. Electrically conductive material are deposited in the backside recesses to form electrically conductive layers.

公开(公告)号：US20200287007A1

公开(公告)日：2020-09-10

申请号：US16291220

申请日：2019-03-04

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yuki KASAI

IPC: H01L29/423 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/51 ,  H01L21/02 ,  H01L21/28

Abstract: An alternating stack of insulating layers and spacer material layers is formed located over a substrate. The spacer material layers are formed as, or are subsequently replaced with, electrically conductive layers. Memory openings are formed through the alternating stack. A memory stack structure is formed within each memory opening. Each memory stack structure includes a memory film and a vertical semiconductor channel. A silicon nitride layer is formed over a sidewall of each memory opening as a component of the memory film. A silicon carbon nitride interfacial layer is formed on the silicon nitride layer, and a tunneling dielectric layer is formed on the silicon carbon nitride interfacial layer.

公开(公告)号：US20230128441A1

公开(公告)日：2023-04-27

申请号：US17507224

申请日：2021-10-21

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Masanori TSUTSUMI ,  Yusuke MUKAE ,  Tatsuya HINOUE ,  Yuki KASAI

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11565 ,  G11C16/04

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, and memory stack structures extending through the alternating stack. Each of the memory stack structures includes a vertical semiconductor channel, a tunneling dielectric layer, a vertical stack of discrete silicon nitride memory elements located at levels of the electrically conductive layers, and a vertical stack of discrete silicon oxide blocking dielectric structures laterally surrounding the vertical stack of discrete silicon nitride memory elements. Each of the silicon oxide blocking dielectric structures includes a silicon oxynitride surface region, and an atomic concentration of nitrogen atoms within the silicon oxynitride surface region decreases with a lateral distance from an interface between the silicon oxynitride surface region and a respective one of the silicon nitride memory elements.

公开(公告)号：US20210036004A1

公开(公告)日：2021-02-04

申请号：US16583906

申请日：2019-09-26

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Takumi MORIYAMA ,  Yasushi DOWAKI ,  Yuki KASAI ,  Satoshi SHIMIZU ,  Jayavel PACHAMUTHU

IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L21/02 ,  H01L23/528 ,  H01L23/522

Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. A memory opening is formed through the alternating stack. A memory film including a silicon nitride layer and a tunneling dielectric layer is formed in the memory opening, and an opening is formed through the memory film. A chemical oxide layer is formed on a physically exposed surface of an underlying semiconductor material portion. A silicon nitride ring can be formed by selectively growing a silicon nitride material from an annular silicon nitride layer portion of the silicon nitride layer while suppressing deposition of the silicon nitride material on the tunneling dielectric layer and on the chemical oxide layer. A vertical semiconductor channel can be formed by depositing a continuous semiconductor material layer on the underlying semiconductor material portion and the tunneling dielectric layer and on the silicon nitride ring.

公开(公告)号：US20210327897A1

公开(公告)日：2021-10-21

申请号：US17090420

申请日：2020-11-05

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yuki KASAI ,  Shigehisa INOUE ,  Tomohiro ASANO ,  Raghuveer S. MAKALA

IPC: H01L27/11582 ,  H01L27/11565 ,  H01L27/1157

Abstract: An alternating stack of disposable material layers and silicon nitride layers is formed over a substrate. Memory openings are formed through the alternating stack, and memory opening fill structures are formed in the memory openings, wherein each of the memory opening fill structures comprises a charge storage material layer, a tunneling dielectric layer, and a vertical semiconductor channel Laterally-extending cavities are formed by removing the disposable material layers selective to the silicon nitride layers and the memory opening fill structures. Insulating layers comprising silicon oxide are formed by oxidizing surface portions of the silicon nitride layers and portions of the charge storage material layers that are proximal to the laterally-extending cavities. Remaining portions of the charge storage material layers form vertical stacks of discrete charge storage elements. Remaining portions of the silicon nitride layers are replaced with electrically conductive layers.