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1.发明申请EPITAXIAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开外延衬底，半导体器件和制造半导体器件的方法公开(公告)号：US20150084163A1
公开(公告)日：2015-03-26
申请号：US14397779
申请日：2013-04-19
发明人： Hiroshi Shikauchi , Hirokazu Goto , Ken Sato , Masaru Shinomiya , Keitaro Tsuchiya , Kazunori Hagimoto
CPC分类号： H01L23/562 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/02521 , H01L21/0254 , H01L21/0262 , H01L29/167 , H01L29/2003 , H01L29/7786 , H01L29/872 , H01L33/007 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an epitaxial substrate including a silicon substrate containing oxygen atoms in concentrations of 4×1017 cm−3 or more and 6×1017 cm−3 or less and containing boron atoms in concentrations of 5×1018 cm−3 or more and 6×1019 cm−3 or less and a semiconductor layer that is placed on the silicon substrate and is made of a material having a thermal expansion coefficient different from the thermal expansion coefficient of the silicon substrate. As a result, the epitaxial substrate in which the occurrence of warpage caused by the stress between the silicon substrate and the semiconductor layer is suppressed is provided.
摘要翻译： 本发明提供一种外延基板，其包括含有浓度为4×1017cm-3以上且6×1017cm-3以下的含有氧原子的硅基板，其含有浓度为5×10 18 cm -3以上的硼原子， 6×10 19 cm -3以下的半导体层，以及设置在硅基板上的由与硅基板的热膨胀系数不同的热膨胀系数的材料构成的半导体层。 结果，提供抑制由硅衬底和半导体层之间的应力引起的翘曲发生的外延衬底。
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2.发明授权公开(公告)号：US09966259B2
公开(公告)日：2018-05-08
申请号：US15585518
申请日：2017-05-03
发明人： Hiroshi Shikauchi , Ken Sato , Hirokazu Goto , Masaru Shinomiya , Keitaro Tsuchiya , Kazunori Hagimoto
IPC分类号： H01L21/02 , H01L29/36 , H01L21/225 , C30B25/18 , C30B29/06 , C30B29/40 , H01L29/778 , H01L29/66
CPC分类号： H01L21/02658 , C30B23/025 , C30B25/18 , C30B25/186 , C30B29/06 , C30B29/403 , H01L21/02381 , H01L21/0245 , H01L21/0254 , H01L21/0259 , H01L21/02595 , H01L21/02598 , H01L21/2251 , H01L21/2258 , H01L29/36 , H01L29/66462 , H01L29/7786
摘要： A silicon-based substrate on which a nitride compound semiconductor layer is formed on a front surface thereof, including a first portion provided on the front surface side which has a first impurity concentration and a second portion provided on an inner side of the first portion which has a second impurity concentration higher than the first impurity concentration, wherein the first impurity concentration being 1×1014 atoms/cm3 or more and less than 1×1019 atoms/cm3. Consequently, there is provided the silicon-based substrate in which the crystallinity of the nitride compound semiconductor layer formed on an upper side thereof can be maintained excellently while improving a warpage of the substrate.
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公开(公告)号：US09876101B2
公开(公告)日：2018-01-23
申请号：US15302684
申请日：2015-03-12
发明人： Ken Sato , Hiroshi Shikauchi , Hirokazu Goto , Masaru Shinomiya , Kazunori Hagimoto , Keitaro Tsuchiya
IPC分类号： H01L29/20 , H01L29/778 , H01L29/66 , H01L29/207 , H01L21/02
CPC分类号： H01L29/7786 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L29/2003 , H01L29/207 , H01L29/66462
摘要： A semiconductor substrate including a substrate, a buffer layer having a nitride-based semiconductor containing carbon provided on the substrate, a high-resistance layer having a nitride-based semiconductor containing carbon provided on the buffer layer, and a channel layer having a nitride-based semiconductor provided on the high-resistance layer, the high-resistance layer including a first region having carbon concentration lower than that of the buffer layer, and a second region which is provided between the first region and the channel layer, and has the carbon concentration higher than the first region. As a result, it is possible to provide the semiconductor substrate which can reduce a leak current by enhancing crystallinity of the high-resistance layer while maintaining a high resistance of the high-resistance layer, and suppress occurrence of a decrease in electron mobility or current collapse in the channel layer by likewise enhancing crystallinity of the channel layer formed on the high-resistance layer.
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4.发明授权Semiconductor substrate, semiconductor device and method of manufacturing the semiconductor device 有权半导体衬底，半导体器件和半导体器件的制造方法公开(公告)号：US09520286B2
公开(公告)日：2016-12-13
申请号：US14892034
申请日：2014-05-02
发明人： Hiroshi Shikauchi , Ken Sato , Hirokazu Goto , Masaru Shinomiya , Keitaro Tsuchiya , Kazunori Hagimoto
IPC分类号： H01L29/36 , H01L21/02 , H01L29/66 , H01L29/20 , H01L29/15 , H01L29/205 , H01L29/778 , H01L29/10
CPC分类号： H01L21/0254 , H01L21/02378 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L29/1075 , H01L29/157 , H01L29/2003 , H01L29/205 , H01L29/36 , H01L29/66462 , H01L29/7786 , H01L29/7787
摘要： A semiconductor substrate having a silicon-based substrate, a buffer layer provided on the silicon-based substrate and made of a nitride semiconductor containing boron, and an operation layer formed on the buffer layer, wherein a concentration of boron in the buffer layer gradually decreasing toward a side of the operation layer from a side of the silicon-based substrate. Thereby, the semiconductor substrate in which the buffer layer contains boron sufficient to obtain a dislocation suppression effect and boron is not diffused to the operation layer is provided.
摘要翻译： 一种半导体衬底，其具有硅基衬底，设置在硅基衬底上并由含有硼的氮化物半导体构成的缓冲层以及形成在缓冲层上的操作层，其中缓冲层中的硼浓度逐渐降低 从硅基基板的一侧朝向操作层的一侧。 由此，提供缓冲层含有足以获得位错抑制效果的硼的半导体基板和不扩散到操作层的硼。
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公开(公告)号：US10833184B2
公开(公告)日：2020-11-10
申请号：US16330884
申请日：2017-02-24
IPC分类号： H01L29/205 , H01L29/207 , H01L29/201 , H01L29/36 , H01L29/778 , H01L29/812 , H01L21/02 , H01L29/66
摘要： A semiconductor device substrate including: a substrate; a buffer layer which is provided on the substrate and made of a nitride semiconductor; and a device active layer which is formed of a nitride semiconductor layer provided on the buffer layer, the semiconductor device substrate in that the buffer layer includes: a first region which contains carbon and iron; a second region which is provided on the first region and has average concentration of iron lower than that in the first region and average concentration of carbon higher than that in the first region, and the average concentration of the carbon in the second region is lower than the average concentration of the iron in the first region. The semiconductor device substrate which can suppress a transverse leak current in a high-temperature operation of a device while suppressing a longitudinal leak current and can inhibit a current collapse phenomenon is provided.
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公开(公告)号：US10586701B2
公开(公告)日：2020-03-10
申请号：US16077263
申请日：2016-02-26
IPC分类号： H01L29/10 , H01L29/20 , H01L29/778 , H01L21/02 , H01L29/205 , H01L29/66
摘要： Semiconductor base including: silicon-based substrate; buffer layer including first and second layers alternately on silicon-based substrate, first layer made of nitride-based compound semiconductor containing first material, second layer made of nitride-based compound semiconductor containing second material having larger lattice constant than first material; channel layer on buffer layer and made of nitride-based compound semiconductor containing second material, buffer layer has: first composition graded layer between at least one of first layers and second layer immediately thereabove, made of nitride-based compound semiconductor whose composition ratio of second material is increased gradually upward, whose composition ratio of first material is decreased gradually upward; second composition graded layer between at least one of second layers and first layer immediately thereabove, made of nitride-based compound semiconductor whose first material is increased gradually upward, whose composition ratio of second material is decreased gradually upward, first composition graded layer is thicker than second composition graded layer.
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公开(公告)号：US10115589B2
公开(公告)日：2018-10-30
申请号：US15538500
申请日：2015-12-18
发明人： Kazunori Hagimoto , Masaru Shinomiya , Keitaro Tsuchiya , Hirokazu Goto , Ken Sato , Hiroshi Shikauchi
IPC分类号： H01L21/44 , H01L27/108 , H01L21/02 , H01L29/78 , H01L29/778 , H01L29/20
摘要： An epitaxial substrate for electronic devices, including: a Si-based substrate; an AlN initial layer provided on the Si-based substrate; and a buffer layer provided on the AlN initial layer, wherein the roughness Sa of the surface of the AlN initial layer on the side where the buffer layer is located is 4 nm or more. As a result, an epitaxial substrate for electronic devices, in which V pits in a buffer layer structure can be suppressed and longitudinal leakage current characteristics can be improved when an electronic device is fabricated therewith, is provided.
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公开(公告)号：US09673052B2
公开(公告)日：2017-06-06
申请号：US14892373
申请日：2014-05-02
发明人： Hiroshi Shikauchi , Ken Sato , Hirokazu Goto , Masaru Shinomiya , Keitaro Tsuchiya , Kazunori Hagimoto
IPC分类号： H01L29/36 , H01L29/66 , H01L21/225 , H01L21/02 , H01L29/778 , C30B23/02 , C30B25/18 , C30B29/40 , C30B29/06
CPC分类号： H01L21/02658 , C30B23/025 , C30B25/18 , C30B25/186 , C30B29/06 , C30B29/403 , H01L21/02381 , H01L21/0245 , H01L21/0254 , H01L21/0259 , H01L21/02595 , H01L21/02598 , H01L21/2251 , H01L21/2258 , H01L29/36 , H01L29/66462 , H01L29/7786
摘要： A silicon-based substrate on which a nitride compound semiconductor layer is formed on a front surface thereof, including a first portion provided on the front surface side which has a first impurity concentration and a second portion provided on an inner side of the first portion which has a second impurity concentration higher than the first impurity concentration, wherein the first impurity concentration being 1×1014 atoms/atomscm3 or more and less than 1×1019 atoms/cm3. Consequently, there is provided the silicon-based substrate in which the crystallinity of the nitride compound semiconductor layer formed on an upper side thereof can be maintained excellently while improving a warpage of the substrate.
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公开(公告)号：US10553674B2
公开(公告)日：2020-02-04
申请号：US15741065
申请日：2016-06-17
发明人： Ken Sato , Hiroshi Shikauchi , Hirokazu Goto , Masaru Shinomiya , Keitaro Tsuchiya , Kazunori Hagimoto
IPC分类号： H01L21/02 , H01L29/06 , H01L29/778 , H01L29/66 , H01L29/207 , H01L29/20
摘要： A substrate for semiconductor device includes a substrate, a buffer layer which is provided on the substrate and made of a nitride semiconductor, and a device active layer which is provided on the buffer layer and composed of a nitride semiconductor layer, wherein the buffer layer contains carbon and iron, a carbon concentration of an upper surface of the buffer layer is higher than a carbon concentration of a lower surface of the buffer layer, and an iron concentration of the upper surface of the buffer layer is lower than an iron concentration of the lower surface of the buffer layer. As a result, the substrate for semiconductor device can reduce a leak current in a lateral direction at the time of a high-temperature operation while suppressing a leak current in a longitudinal direction.
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公开(公告)号：US10529842B2
公开(公告)日：2020-01-07
申请号：US15760579
申请日：2016-08-29
IPC分类号： H01L29/778 , H01L21/02 , H01L29/36 , H01L29/66 , H01L29/20
摘要： A semiconductor base substance includes: a substrate; a buffer layer which is made of a nitride semiconductor and provided on the substrate; and a channel layer which is made of a nitride semiconductor and provided on the buffer layer, wherein the buffer layer includes: a first region which is provided on the substrate side and has boron concentration higher than acceptor element concentration; and a second region which is provided on the first region, and has boron concentration lower than that in the first region and acceptor element concentration higher than that in the first region. As a result, the semiconductor base substance which can obtain a high pit suppression effect while maintaining a high longitudinal breakdown voltage is provided.
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