公开(公告)号：US20220392780A1

公开(公告)日：2022-12-08

申请号：US17882077

申请日：2022-08-05

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Yukifumi YOSHIDA ,  Dai UEDA

IPC: H01L21/67 ,  H01L21/02

Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid having a solute and a solvent to a surface of a substrate, a processing film forming step of solidifying or curing the processing liquid supplied to the surface of the substrate to form, on the surface of the substrate, a processing film that holds a removal object present on the surface of the substrate, a peeling step of supplying a peeling liquid forming liquid to the surface of the substrate to put the peeling liquid forming liquid in contact with the processing film and form a peeling liquid, and peeling the processing film, in the state of holding the removal object, from the surface of the substrate by the peeling liquid, and a removing step of continuing the supply of the peeling liquid forming liquid, after the peeling of the processing film, to wash away and remove the processing film from the surface of the substrate in the state where the removal object is held by the processing film.

公开(公告)号：US20170213725A1

公开(公告)日：2017-07-27

申请号：US15393698

申请日：2016-12-29

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Hiroaki KITAGAWA ,  Dai UEDA ,  Katsuhiko MIYA

IPC: H01L21/02 ,  B05C13/00 ,  B05D3/04 ,  B05D3/12 ,  F25B21/02 ,  H01L21/67 ,  H01L21/687 ,  B08B7/00 ,  B08B3/10 ,  B05C11/08 ,  B05C9/14

CPC classification number: F25B21/02 ,  B05D3/10 ,  B08B7/0014 ,  H01L21/02052 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/68764

Abstract: A substrate processing apparatus comprises: a first solidifier and a second solidifier. The first solidifier solidifies a liquid to be solidified adhering to a front surface of a substrate by supplying a liquid refrigerant to a back surface of the substrate at a first position. The second solidifier solidifies the liquid to be solidified by at least one of a first cooling mechanism and a second cooling mechanism. The first cooling mechanism cools the liquid to be solidified by supplying a gas refrigerant toward the substrate at a second position more distant from a center of rotation of the substrate in a radial direction than the first position. The second cooling mechanism cools the liquid to be solidified by bringing a processing surface into contact with the liquid to be solidified at the second position.

公开(公告)号：US20240170297A1

公开(公告)日：2024-05-23

申请号：US18550617

申请日：2022-01-20

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Yosuke HANAWA ,  Dai UEDA ,  Akiko HARUMOTO

IPC: H01L21/311 ,  H01L21/67

CPC classification number: H01L21/31111 ,  H01L21/6708 ,  H01L21/67253

Abstract: This disclosure relates to a substrate treating method and a substrate treating apparatus. An additive is dissolved in a first treatment liquid. The first treatment liquid contains iodide ions (I−). The substrate treating method includes an adjusting step and a supplying step. In the adjusting step, decrease in iodide ions (I−) contained in the first treatment liquid is suppressed. Accordingly, the first treatment liquid contains a sufficient amount of iodide ions (I−). In the supplying step, the first treatment liquid adjusted in the adjusting step is supplied to a substrate. Moreover, in the supplying step, a first etchant for etching the substrate is supplied to the substrate.

公开(公告)号：US20250140570A1

公开(公告)日：2025-05-01

申请号：US18692792

申请日：2022-05-26

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Dai UEDA

IPC: H01L21/3213

Abstract: This disclosure relates to a substrate treating method and a substrate treating apparatus. The substrate treating method for treating a substrate W includes a switching step and a processing step. In the switching step, an additive agent is switched between an anion surfactant and a cation surfactant. In the processing step, an etching solution is supplied to the substrate W. In the processing step, the additive agent selected in the switching step is supplied to the substrate W.

公开(公告)号：US20190333755A1

公开(公告)日：2019-10-31

申请号：US16475146

申请日：2017-11-10

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Yosuke HANAWA ,  Dai UEDA ,  Yuta SASAKI

IPC: H01L21/02 ,  H01L21/67 ,  B08B3/08 ,  B08B7/00

Abstract: A substrate treating method and a substrate treating apparatus which can reduce the collapse of a pattern on a substrate. The substrate treating method includes a supply step of supplying a process liquid including a sublimable substance in a molten state to a pattern-formed surface of a substrate; a solidification step of solidifying the process liquid on the pattern-formed surface so as to form a solidified body; a sublimation step of subliming the solidified body so as to remove the solidified body from the pattern-formed surface; and an organic substance removal step of removing, when the solidified body is sublimed, an organic substance precipitated on a sublimation interface, and the organic substance removal step is performed so as to overlap at least part of the sublimation step.

公开(公告)号：US20220076941A1

公开(公告)日：2022-03-10

申请号：US17527215

申请日：2021-11-16

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Yukifumi YOSHIDA ,  Manabu OKUTANI ,  Shuichi YASUDA ,  Yasunori KANEMATSU ,  Dai UEDA ,  Song ZHANG ,  Tatsuro NAGAHARA ,  Takafumi KINUTA

IPC: H01L21/02 ,  B08B3/08

Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid to a patterned surface of a substrate having the patterned surface with projections and recesses, a processing film forming step of solidifying or curing the processing liquid supplied to the patterned surface to form, so as to follow the projections and the recesses of the patterned surface, a processing film which holds a removal object present on the patterned surface and a removing step of supplying a peeling liquid to the patterned surface to peel the processing film from the patterned surface together with the removal object, thereby removing the processing film from the substrate, while such a state is kept that the removal object is held by the processing film.

公开(公告)号：US20210288172A1

公开(公告)日：2021-09-16

申请号：US17191841

申请日：2021-03-04

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Dai UEDA ,  Yosuke HANAWA

IPC: H01L29/78 ,  H01L21/306 ,  H01L29/66

Abstract: A substrate processing liquid is used to etch a substrate in which at least either a bottom wall or a side wall forming a trench structure is an etched layer made of metal or a metal compound. The substrate processing liquid includes a chemical liquid containing H2O2 molecules or HO2− functioning as an etchant for etching the metal, and a complex forming agent containing NH4+ and forming a complex with ions of the metal and is adjusted to a pH of 5 or more.

公开(公告)号：US20210016331A1

公开(公告)日：2021-01-21

申请号：US16981309

申请日：2019-02-07

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Dai UEDA ,  Yuta SASAKI ,  Yosuke HANAWA ,  Hiroaki KITAGAWA

IPC: B08B3/10 ,  F26B5/10 ,  H01L21/304

Abstract: A substrate processing technique including a process of forming a liquid film on an upper surface of a substrate and excellently solidifying the liquid film is provided. A substrate processing method includes an atmosphere control step of supplying a drying gas to a front surface of a substrate on which a pattern has been formed and to which a liquid has adhered and making a dry atmosphere around the front surface of the substrate, a to-be-solidified liquid supplying step of supplying a to-be-solidified liquid to the front surface of the substrate, and a solidification step of forming a solidified mass by solidifying a liquid film of the to-be-solidified liquid. The atmosphere control step is started before the liquid film of the to-be-solidified liquid supplied to the front surface of the substrate in the to-be-solidified liquid supplying step is formed.

公开(公告)号：US20190366394A1

公开(公告)日：2019-12-05

申请号：US16426115

申请日：2019-05-30

Applicant: SCREEN Holdings Co., Ltd. ,  Merck Patent GmbH

Inventor： Yukifumi YOSHIDA ,  Manabu OKUTANI ,  Shuichi YASUDA ,  Yasunori KANEMATSU ,  Dai UEDA ,  Song ZHANG ,  Tatsuro NAGAHARA ,  Takafumi KINUTA

IPC: B08B7/00 ,  B08B3/08 ,  B08B3/04 ,  B08B3/10 ,  C11D3/37 ,  C11D3/20

Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid having a solute and a solvent to a front surface of a substrate, a processing film forming step of forming on the front surface of the substrate a processing film which holds a removal object present on the front surface of the substrate by solidifying or curing the processing liquid supplied to the front surface of the substrate, and a peeling step of peeling the processing film from the front surface of the substrate together with the removal object by supplying a peeling liquid to the front surface of the substrate, and the peeling step includes a penetrating hole forming step of forming a penetrating hole on the processing film by dissolving partially the processing film in the peeling liquid.

公开(公告)号：US20170345683A1

公开(公告)日：2017-11-30

申请号：US15602722

申请日：2017-05-23

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Yuta SASAKI ,  Yosuke HANAWA ,  Soichi NADAHARA ,  Dai UEDA ,  Hiroaki KITAGAWA

IPC: H01L21/67 ,  C11D11/00 ,  C11D7/30 ,  C11D7/26 ,  B08B3/08 ,  H01L21/02 ,  B08B3/02

CPC classification number: H01L21/67034 ,  B08B3/02 ,  B08B3/08 ,  C11D7/261 ,  C11D7/30 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/67051

Abstract: Disclosed is a substrate treating apparatus including the following units: a supplying unit which supplies a process liquid including a sublimable substance in a melt state on a pattern-formed surface of a substrate W; a solidifying unit which solidifies the process liquid on the pattern-formed surface to produce a solidified body; and a sublimating unit which sublimates the solidified body to remove the solidified body from the pattern-formed surface. In this apparatus, the sublimable substance includes a fluorinated carbon compound.