公开(公告)号：US20240096603A1

公开(公告)日：2024-03-21

申请号：US18469755

申请日：2023-09-19

申请人： SEMES CO., LTD.

发明人： Dong-Hun KIM ,  Wan Jae PARK ,  Dong Sub OH ,  Myoung Sub NOH ,  Ji Hoon PARK

IPC分类号： H01J37/32

CPC分类号： H01J37/3244 ,  H01J37/32422 ,  H01J2237/334 ,  H01L21/67069

摘要： The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes an electrode plate applied with a power; an ion blocker positioned at a bottom side of the electrode plate, which has a plurality of top holes formed thereon, and which is grounded; a shower head positioned at a bottom side of the ion blocker and which has a plurality of bottom holes formed thereon; and a turbulence generating unit configured to have a turbulence space therein, and which is positioned at a space between the ion blocker and the shower head, and wherein the top hole is positioned to overlap the turbulence space when seen from above, and the bottom hole is positioned at an outer side of the turbulence space, and which faces at least one of a bottom surface of the ion blocker and an outer wall of the turbulence generating unit when seen from below.

公开(公告)号：US20230073489A1

公开(公告)日：2023-03-09

申请号：US17902110

申请日：2022-09-02

申请人： SEMES CO., LTD.

发明人： Dong-Hun KIM ,  Jae Hwan KIM ,  Hye Joon KHEEL ,  Gun Woo KIM ,  Tae Hyeon JEON

IPC分类号： H01L21/311 ,  H01J37/32

摘要： Provided is a substrate treating method of removing a thin film formed on a substrate. The substrate treating method includes a reaction process of transferring an etchant to the thin film, and a removal process of removing process by-products generated by reacting the thin film with the etchant, in which the reaction process and the removal process are repeated at least twice or more, and any one of the removal processes is to remove partially the process by-products.

公开(公告)号：US20230136707A1

公开(公告)日：2023-05-04

申请号：US17977440

申请日：2022-10-31

申请人： SEMES CO., LTD.

发明人： Dong-Hun KIM ,  Jun Taek KOO ,  Myoung Sub NOH ,  Dong Sub OH

IPC分类号： H01J37/32 ,  G02B27/28

摘要： The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having an inner space; a plate separating the inner space into a first space which is above and a second space which is below and having a plurality of through holes; a first gas supply unit configured to supply a first gas to the first space; a plasma source for generating a plasma at the first space or the second space; and a monitoring unit installed at the plate and configured to monitor a characteristic of the plasma generated at the first space or the second space.

公开(公告)号：US20230215699A1

公开(公告)日：2023-07-06

申请号：US18079142

申请日：2022-12-12

申请人： SEMES CO., LTD.

发明人： Myoungsub NOH ,  Seong Gil LEE ,  Dong-Hun KIM ,  Dong Sub OH ,  Jountaek KOO ,  Wan Jae PARK

IPC分类号： H01J37/32

CPC分类号： H01J37/32449 ,  H01J37/32834 ,  H01J37/32082 ,  H01J2237/3346 ,  H01J2237/3341

摘要： According to one aspect of the present invention, a method of treating a substrate within a chamber includes performing a unit cycle at least one time, in which the unit cycle includes a substrate treatment step of supplying a reaction gas in which radicals constituting plasma of a first treatment gas are mixed with a second treatment gas onto the substrate, wherein the substrate includes a first thin film, and a second thin film having a lower reactivity to the reaction gas than the first thin film.

公开(公告)号：US20230148026A1

公开(公告)日：2023-05-11

申请号：US17716853

申请日：2022-04-08

申请人： SEMES CO., LTD.

发明人： Seong Gil LEE ,  Myoung Sub NOH ,  Dong-Hun KIM ,  Young Je UM ,  Dong Sub OH ,  Jun Taek KOO ,  Wan Jae PARK

IPC分类号： H01J37/32

CPC分类号： H01J37/32724 ,  H01J37/32422 ,  H01J37/32449 ,  H01J37/32834 ,  H01J2237/334 ,  H01J2237/2007

摘要： A substrate treating method includes a temperature stabilizing step for stabilizing a temperature of the substrate to a process temperature in a treating space for treating a substrate, a pressure stabilizing step for stabilizing a pressure of a plasma space for generating a plasma and a pressure of the treating space to a process, the plasma space fluid communicating with the treating space, and a treating step for generating the plasma at the plasma space and treating the substrate using the plasma.

公开(公告)号：US20230026796A1

公开(公告)日：2023-01-26

申请号：US17868067

申请日：2022-07-19

申请人： SEMES CO., LTD.

发明人： Young Je UM ,  Wan Jae PARK ,  Dong-Hun KIM ,  Seong Gil LEE ,  Ji Hoon PARK

IPC分类号： H01J37/32 ,  H01L21/683

摘要： The inventive concept provides a substrate treating method. The substrate treating method for treating a substrate at which thin films are stacked and a hole is formed thereon including treating the substrate using a first plasma including an ion, which is a first treating step; and treating the substrate using a second plasma removed of an ion, which is a second treating step.

公开(公告)号：US20220384153A1

公开(公告)日：2022-12-01

申请号：US17752079

申请日：2022-05-24

申请人： SEMES CO., LTD.

发明人： Dong-Hun KIM ,  Wan Jae PARK ,  Ji Hoon PARK ,  Du Ri KIM

IPC分类号： H01J37/32 ,  H01J65/04 ,  H01J61/30

摘要： The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having an inner space; a plasma source configured to apply an electric field; a first gas supply unit configured to supply a first process gas to a region to which the plasma source applies the electric field, the first process gas excited to a plasma when the first process gas is applied with an electric field of a first intensity at a first pressure atmosphere; a support unit disposed in the inner space and configured to support a substrate to be treated; and an electrodeless lamp disposed above the substrate in the inner space, and wherein the electrodeless lamp includes an electric field transmissive housing having a discharging space therein; and a discharging material including a luminous material and filling the discharging space, the discharging space of the housing being pressurized to a second pressure, and the discharging material discharging and luminating when applied with an electric field of a second intensity higher than the first intensity at a second pressure.