中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

8 records (took 0.012 seconds)

    SUBSTRATE TREATING APPARATUS AND SUBSTRATE TRANSFER APPARATUS
    1.
    发明申请
    SUBSTRATE TREATING APPARATUS AND SUBSTRATE TRANSFER APPARATUS 有权

    公开(公告)号：US20210020485A1

    公开(公告)日：2021-01-21

    申请号：US16930660

    申请日：2020-07-16

    Applicant: SEMES CO., LTD.

    Inventor： Ohyeol KWON ,  Jung Hwan LEE ,  Soo Young PARK

    IPC: H01L21/677 ,  H01L21/687

    Abstract: A substrate treating apparatus includes a plurality of load ports on which carriers having substrates received therein are placed, a plurality of process chambers that perform processes on the substrates, and a transfer robot that transfers the substrates between the load ports and the process chambers. The transfer robot is movable along a transfer passage having a lengthwise direction formed along a first direction, the load ports and the process chambers are arranged along the first direction on one side and an opposite side of the transfer passage, and the transfer robot transfers the substrates between the carriers placed on the load ports and the process chambers.

    APPARATUS AND METHOD FOR TREATING SUBSTRATE
    2.
    发明申请
    APPARATUS AND METHOD FOR TREATING SUBSTRATE 审中-公开

    公开(公告)号：US20200346299A1

    公开(公告)日：2020-11-05

    申请号：US16861709

    申请日：2020-04-29

    Applicant: SEMES CO., LTD.

    Inventor： Soo Young PARK ,  Ohyeol KWON ,  Jun Keon AHN ,  Jung Hwan LEE

    IPC: B23K26/042 ,  B23K26/03

    Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a chamber providing a space in which a substrate is treated, a support unit supporting the substrate inside the chamber, a laser unit irradiating laser to an edge region of the substrate, a vision unit capturing the edge region of the substrate to measure an offset value of the substrate, and an adjustment unit adjusting an irradiation location of the laser based on the offset value of the substrate.

    PLASMA GENERATING UNIT AND SUBSTRATE TREATING APPARATUS HAVING THE SAME
    4.
    发明申请
    PLASMA GENERATING UNIT AND SUBSTRATE TREATING APPARATUS HAVING THE SAME 审中-公开
    等离子体发生单元和基板处理设备

    公开(公告)号：US20160027617A1

    公开(公告)日：2016-01-28

    申请号：US14796620

    申请日：2015-07-10

    Applicant: Semes Co., Ltd

    Inventor： Duk Hyun SON ,  Jung Hwan LEE

    IPC: H01J37/32 ,  H01J37/244

    CPC classification number: H01J37/32183 ,  H01J37/321 ,  H01J37/32577 ,  H01J37/32935

    Abstract: Disclosed are an apparatus for treating a substrate and a plasma generating device. The apparatus for treating a substrate includes a process chamber, a support unit supporting the substrate in the process chamber, a gas supply unit supplying a process gas in the process chamber, and a plasma generating unit generating a plasma from the process gas supplied in the process chamber, and the plasma generating unit includes a high frequency power supply, an antenna unit connected to the high frequency power via a supply line, and an impedance matcher connected between the high frequency power supply and the antenna unit via the supply line and matching impedance, and the impedance matcher includes a first sensor connected to an input terminal and measuring input impedance and a second sensor connected to an output terminal and measuring output impedance.

    Abstract translation: 公开了一种用于处理基板和等离子体产生装置的装置。 用于处理基板的设备包括处理室，在处理室中支撑基板的支撑单元，在处理室中供应处理气体的气体供应单元和从供应在处理室中的处理气体产生等离子体的等离子体产生单元 处理室，等离子体产生单元包括高频电源，通过电源线连接到高频电源的天线单元，以及通过供电线连接在高频电源和天线单元之间的阻抗匹配器，并且匹配 阻抗匹配器包括连接到输入端子的第一传感器和测量输入阻抗，第二传感器连接到输出端并测量输出阻抗。

Patent Agency Ranking