公开(公告)号：US20240105456A1

公开(公告)日：2024-03-28

申请号：US18243255

申请日：2023-09-07

Applicant: SEMES CO., LTD.

Inventor： Hanglim LEE ,  Minyoung KIM ,  Thomas Jongwan KWON

IPC: H01L21/306 ,  C23C16/02 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L21/30604 ,  C23C16/0227 ,  H01L21/76814 ,  H01L23/5286

Abstract: A method of forming a semiconductor device includes pretreating a semiconductor substrate including at least one buried power rail for power transmission, based on chemical reaction by supplying a pretreatment gas for surface treatment onto a backside of the semiconductor substrate, forming at least one metal catalyst layer on the backside of the semiconductor substrate so as to be at least partially aligned with the at least one buried power rail, and forming at least one backside via hole by supplying an etchant to the semiconductor substrate to anisotropically etch the semiconductor substrate between the at least one metal catalyst layer and the at least one buried power rail while the at least one metal catalyst layer is descending into the semiconductor substrate by using metal assisted chemical etching (MACE).

公开(公告)号：US20240006166A1

公开(公告)日：2024-01-04

申请号：US18332088

申请日：2023-06-09

Applicant: SEMES CO., LTD.

Inventor： Minyoung KIM ,  Hanglim LEE

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32541 ,  H01J37/32449

Abstract: Provided is a substrate processing apparatus and substrate processing method capable of processing a substrate by using plasma, the substrate processing apparatus including a process chamber providing an internal space where a substrate is processed, a spin chuck serving as a lower electrode, supporting the substrate in the internal space of the process chamber, and rotating the supported substrate, and a plasma generation unit mounted in an upper portion of the process chamber to face the spin chuck, including a discharge space where an upper electrode is provided, generating plasma by using a process gas supplied from outside, linearly ejecting the plasma onto the substrate rotated by the spin chuck, and controlling a density of the plasma to change along an extension direction of the linearly ejected plasma.

公开(公告)号：US20240213079A1

公开(公告)日：2024-06-27

申请号：US18515867

申请日：2023-11-21

Applicant: SEMES CO., LTD.

Inventor： Jumi Lee ,  Jaeoh Bang ,  Minyoung KIM

IPC: H01L21/687 ,  H01L21/67

CPC classification number: H01L21/68757 ,  H01L21/67109 ,  H01L21/68742 ,  H01L21/6875

Abstract: Provided is a substrate heater including a support plate configured to be loaded with a substrate, an insulating layer arranged under the support plate, and a heating portion arranged under the insulating layer and configured to heat the support plate, wherein the insulating layer includes a plurality of layers, wherein at least two of the plurality of layers of the insulating layer have different thermal expansion coefficients from each other.

公开(公告)号：US20240194517A1

公开(公告)日：2024-06-13

申请号：US18515638

申请日：2023-11-21

Applicant: SEMES CO., LTD.

Inventor： Jaeoh BANG ,  Jumi LEE ,  Minyoung KIM ,  Jong Gun LEE

IPC: H01L21/687 ,  G03F7/40 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/6875 ,  G03F7/40 ,  H01L21/67109 ,  H01L21/6838 ,  H01L21/68742

Abstract: Disclosed is a substrate processing apparatus that allows a substrate to be supported on an ultra-thin heating plate so as to be spaced from the ultra-thin heating plate in a proximity manner. The substrate processing apparatus includes a heating plate for heating a substrate; and a through proximity pin installed in the heating plate so as to pass through a through-hole formed in the heating plate such that the substrate is spaced from the heating plate by a spacing via the through proximity pin.