公开(公告)号：US20230039663A1

公开(公告)日：2023-02-09

申请号：US17865918

申请日：2022-07-15

Applicant: SEMES CO., LTD.

Inventor： Jee Young LEE ,  Young Dae CHUNG ,  Ji Hoon JEONG ,  Won-Geun KIM ,  Tae Shin KIM

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/306

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a support unit horizontally maintaining a substrate; a laser irradiation unit for irradiating the substrate with a laser; a photo-detector for detecting an energy of a reflective light reflected from the substrate among a laser irradiated on the substrate; and a processor, and wherein the processor irradiates a first laser of a first output to the substrate, and sets a second output of a second laser for irradiating the substrate to heat the substrate, based on an energy of a first reflective light reflected from the substrate by the first laser detected from the photo-detector.

公开(公告)号：US20230360933A1

公开(公告)日：2023-11-09

申请号：US17739377

申请日：2022-05-09

Applicant: SEMES CO., LTD.

Inventor： Tae Shin KIM ,  Ji Hoon JEONG ,  Young Dae CHUNG ,  Jee Young LEE ,  Won-Geun KIM

IPC: H01L21/67 ,  G02B27/09 ,  G02B5/00 ,  B23K26/06 ,  B23K26/073 ,  B23K26/03

CPC classification number: H01L21/6708 ,  G02B27/0955 ,  G02B5/001 ,  G02B27/0927 ,  B23K26/0652 ,  B23K26/0734 ,  B23K26/034 ,  B23K26/0648 ,  B23K26/127

Abstract: The present invention provides a substrate treating facility, including: a process chamber including an annular beam emitting unit which emits an annular laser beam to a substrate and heats the substrate; and a laser beam generator configured to generate the laser beam emitted to the substrate through the annular beam emitting unit of the process chamber.

公开(公告)号：US20230377911A1

公开(公告)日：2023-11-23

申请号：US18192820

申请日：2023-03-30

Applicant: SEMES CO., LTD.

Inventor： Won-Geun KIM

IPC: H01L21/67

CPC classification number: H01L21/6708 ,  H01L21/67115 ,  H01L21/68792

Abstract: A method of etching a thin film includes: a first puddling operation of forming a first puddle of a chemical solution on a substrate by supplying and spreading the chemical solution on the substrate on which a thin film is formed; a first etching operation of partially etching the thin film using the chemical solution on the substrate; a first rinsing operation of supplying the chemical solution onto the substrate to rinse off the first puddle of the chemical solution and apply the chemical solution onto the substrate; a second puddling operation of forming a second puddle of the chemical solution on the substrate; a second etching operation of partially etching the thin film; and a second rinsing operation of supplying the chemical solution onto the substrate to rinse off the second puddle of the chemical solution on the substrate and apply the chemical solution on to the substrate.