公开(公告)号：US20230213867A1

公开(公告)日：2023-07-06

申请号：US18147469

申请日：2022-12-28

Applicant: SEMES CO., LTD.

Inventor： Tae Hee KIM ,  Ji Hoon JEONG ,  Tae Shin KIM ,  Young Dae CHUNG ,  Young Eun JEON

IPC: G03F7/20

CPC classification number: G03F7/70191 ,  G03F7/70025

Abstract: The inventive concept provides a mask treatment apparatus. The mask treatment may include a support unit that supports the mask, and a light irradiation unit that irradiate the mask with a light to adjust a critical dimension of a pattern formed in the mask, wherein the light irradiation unit includes a light source that generates the light, and a light modulation element that modulates the light generated by the light source and forms an irradiation pattern.

公开(公告)号：US20230084076A1

公开(公告)日：2023-03-16

申请号：US17943452

申请日：2022-09-13

Applicant: SEMES CO., LTD.

Inventor： Hyun YOON ,  Ki Hoon CHOI ,  Tae Hee KIM ,  Hyo Won YANG ,  Young Dae CHUNG ,  Ji Hoon JEONG

IPC: H01L21/268 ,  H01L21/67 ,  G03F1/70

Abstract: The inventive concept provides a mask treating apparatus. The mask treating apparatus includes a support unit configured to support and rotate a mask, the mask having a first pattern within a plurality of cells thereof and a second pattern outside regions of the plurality of cells; a heating unit including a laser irradiation module and a moving module, the laser irradiation module having a laser irradiator for irradiating a laser light to the second pattern, the moving module configured to change a position of the laser irradiation module; and a controller configured to control the support unit and the heating unit, and wherein when a treating position is divided into four equal parts from a first quadrant to a fourth quadrant based on a center of the mask, the laser irradiator is positioned at the fourth quadrant and the first quadrant in a direction linearly moving from a standby position to the treating position, positioned at the third quadrant in a direction which is perpendicular to the fourth quadrant, and positioned at the second quadrant in a direction which is perpendicular to the first quadrant, and wherein the controller controls a rotation of the support unit so the second pattern is positioned at the fourth quadrant.

公开(公告)号：US20240035166A1

公开(公告)日：2024-02-01

申请号：US18108002

申请日：2023-02-09

Applicant: SEMES CO., LTD.

Inventor： Jee Young LEE ,  Won Geun KIM ,  Young Dae CHUNG ,  Ji Hoon JEONG ,  Tae Shin KIM ,  Won Sik SON

IPC: C23F1/00

CPC classification number: C23F1/00

Abstract: A method of processing a substrate includes an etchant supplying operation of supplying an etchant to a substrate; a puddle operation of, by rotating the substrate at a first rotational speed, forming a liquid film of the etchant supplied to the substrate in a puddle shape; and a thickness adjusting operation of changing a rotational speed of the substrate to a rotational speed different from the first rotational speed to adjust a thickness of the liquid film of the etchant. Using the method, dispersion of the etching rate may be effectively controlled.

公开(公告)号：US20210202280A1

公开(公告)日：2021-07-01

申请号：US17128159

申请日：2020-12-20

Applicant: SEMES CO., LTD.

Inventor： Tae Shin KIM ,  Young Dae CHUNG ,  Ji Hoon JEONG ,  Jee Young LEE ,  Won Geun KIM

IPC: H01L21/67 ,  G02B27/09 ,  G02B7/02 ,  H01L21/687 ,  H01L21/02 ,  H01L21/268 ,  H01L21/66 ,  B08B3/10 ,  B23K26/00 ,  B23K26/352 ,  B23K26/06 ,  B23K26/064

Abstract: Proposed is a substrate heating unit including: a laser generator providing a laser beam for heating a substrate; and a beam shaper processing the laser beam from the laser generator and selectively providing one of a first beam having a uniform energy distribution and a second beam having an edge-enhanced energy distribution to the substrate.

公开(公告)号：US20230204414A1

公开(公告)日：2023-06-29

申请号：US17979149

申请日：2022-11-02

Applicant: SEMES CO., LTD.

Inventor： Hyun YOON ,  Ki Hoon CHOI ,  Tae Hee KIM ,  Ji Hoon JEONG

IPC: G01J1/42 ,  G01J1/02 ,  G03F7/20

CPC classification number: G01J1/4257 ,  G01J1/0271 ,  G03F7/2053

Abstract: The present invention provides a substrate treating apparatus including: support unit is configured to support and rotate a substrate in a treatment space; a liquid supply unit is configured to supply a liquid to the substrate supported by the support unit; a laser unit including a laser irradiation unit which irradiates laser light to the substrate supported by the support unit; a home port providing a standby position in which the laser unit waits; and a moving unit for moving the laser unit between a process position in which the laser light is irradiated to the substrate and the standby position, in which the home port detects a characteristic of the laser light from the laser light irradiated by the laser unit.

公开(公告)号：US20230039663A1

公开(公告)日：2023-02-09

申请号：US17865918

申请日：2022-07-15

Applicant: SEMES CO., LTD.

Inventor： Jee Young LEE ,  Young Dae CHUNG ,  Ji Hoon JEONG ,  Won-Geun KIM ,  Tae Shin KIM

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/306

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a support unit horizontally maintaining a substrate; a laser irradiation unit for irradiating the substrate with a laser; a photo-detector for detecting an energy of a reflective light reflected from the substrate among a laser irradiated on the substrate; and a processor, and wherein the processor irradiates a first laser of a first output to the substrate, and sets a second output of a second laser for irradiating the substrate to heat the substrate, based on an energy of a first reflective light reflected from the substrate by the first laser detected from the photo-detector.

公开(公告)号：US20210313239A1

公开(公告)日：2021-10-07

申请号：US17224658

申请日：2021-04-07

Applicant: SEMES CO., LTD.

Inventor： Jung Suk GOH ,  Young Dae CHUNG ,  Ji Hoon JEONG

IPC: H01L21/66 ,  H01L21/311

Abstract: A substrate processing method and a substrate processing apparatus for removing material on a substrate are disclosed. In order to remove the material, a processing liquid including a chemical liquid and water is supplied on the substrate so that a liquid layer maintained by surface tension is formed. The material is removed from the substrate by a reaction between the material and the processing liquid. A size distribution of by-product particles formed by the reaction between the material and the processing liquid is measured by a dynamic light scattering method. A supply of the processing liquid is controlled based on the size distribution of the by-product particles.

公开(公告)号：US20230360933A1

公开(公告)日：2023-11-09

申请号：US17739377

申请日：2022-05-09

Applicant: SEMES CO., LTD.

Inventor： Tae Shin KIM ,  Ji Hoon JEONG ,  Young Dae CHUNG ,  Jee Young LEE ,  Won-Geun KIM

IPC: H01L21/67 ,  G02B27/09 ,  G02B5/00 ,  B23K26/06 ,  B23K26/073 ,  B23K26/03

CPC classification number: H01L21/6708 ,  G02B27/0955 ,  G02B5/001 ,  G02B27/0927 ,  B23K26/0652 ,  B23K26/0734 ,  B23K26/034 ,  B23K26/0648 ,  B23K26/127

Abstract: The present invention provides a substrate treating facility, including: a process chamber including an annular beam emitting unit which emits an annular laser beam to a substrate and heats the substrate; and a laser beam generator configured to generate the laser beam emitted to the substrate through the annular beam emitting unit of the process chamber.

公开(公告)号：US20210183660A1

公开(公告)日：2021-06-17

申请号：US17115313

申请日：2020-12-08

Applicant: SEMES CO., LTD.

Inventor： Jung Suk GOH ,  Jae Seong LEE ,  Do Youn LIM ,  Kuk Saeng KIM ,  Young Dae CHUNG ,  Tae Shin KIM ,  Jee Young LEE ,  Won Geun KIM ,  Ji Hoon JEONG ,  Kwang Sup KIM ,  Pil Kyun HEO ,  Yoon Ki SA ,  Ye Rim YEON ,  Hyun YOON ,  Do Yeon KIM ,  Yong Jun SEO ,  Byeong Geun KIM ,  Young Je UM

IPC: H01L21/311 ,  H01L21/66 ,  H01L21/67

Abstract: Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.

公开(公告)号：US20210134614A1

公开(公告)日：2021-05-06

申请号：US17079445

申请日：2020-10-24

Applicant: SEMES CO., LTD.

Inventor： Young Dae CHUNG ,  Won Geun KIM ,  Jee Young LEE ,  Ji Hoon JEONG ,  Tae Shin KIM ,  Jung Suk GOH ,  Cheng Bin CUI ,  Ye Rim YEON

IPC: H01L21/67

Abstract: A substrate treatment apparatus includes a substrate support unit, a chemical supply unit supplying a chemical solution onto an upper surface of a substrate supported on the substrate support unit, a laser irradiation unit applying a laser pulse to the substrate to heat the substrate, and a controller controlling the laser irradiation unit to emit the laser pulse such that the substrate is repeatedly heated and cooled to maintain a preset temperature.