公开(公告)号：US20230039663A1

公开(公告)日：2023-02-09

申请号：US17865918

申请日：2022-07-15

Applicant: SEMES CO., LTD.

Inventor： Jee Young LEE ,  Young Dae CHUNG ,  Ji Hoon JEONG ,  Won-Geun KIM ,  Tae Shin KIM

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/306

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a support unit horizontally maintaining a substrate; a laser irradiation unit for irradiating the substrate with a laser; a photo-detector for detecting an energy of a reflective light reflected from the substrate among a laser irradiated on the substrate; and a processor, and wherein the processor irradiates a first laser of a first output to the substrate, and sets a second output of a second laser for irradiating the substrate to heat the substrate, based on an energy of a first reflective light reflected from the substrate by the first laser detected from the photo-detector.

公开(公告)号：US20240035166A1

公开(公告)日：2024-02-01

申请号：US18108002

申请日：2023-02-09

Applicant: SEMES CO., LTD.

Inventor： Jee Young LEE ,  Won Geun KIM ,  Young Dae CHUNG ,  Ji Hoon JEONG ,  Tae Shin KIM ,  Won Sik SON

IPC: C23F1/00

CPC classification number: C23F1/00

Abstract: A method of processing a substrate includes an etchant supplying operation of supplying an etchant to a substrate; a puddle operation of, by rotating the substrate at a first rotational speed, forming a liquid film of the etchant supplied to the substrate in a puddle shape; and a thickness adjusting operation of changing a rotational speed of the substrate to a rotational speed different from the first rotational speed to adjust a thickness of the liquid film of the etchant. Using the method, dispersion of the etching rate may be effectively controlled.

公开(公告)号：US20210202280A1

公开(公告)日：2021-07-01

申请号：US17128159

申请日：2020-12-20

Applicant: SEMES CO., LTD.

Inventor： Tae Shin KIM ,  Young Dae CHUNG ,  Ji Hoon JEONG ,  Jee Young LEE ,  Won Geun KIM

IPC: H01L21/67 ,  G02B27/09 ,  G02B7/02 ,  H01L21/687 ,  H01L21/02 ,  H01L21/268 ,  H01L21/66 ,  B08B3/10 ,  B23K26/00 ,  B23K26/352 ,  B23K26/06 ,  B23K26/064

Abstract: Proposed is a substrate heating unit including: a laser generator providing a laser beam for heating a substrate; and a beam shaper processing the laser beam from the laser generator and selectively providing one of a first beam having a uniform energy distribution and a second beam having an edge-enhanced energy distribution to the substrate.

公开(公告)号：US20230360933A1

公开(公告)日：2023-11-09

申请号：US17739377

申请日：2022-05-09

Applicant: SEMES CO., LTD.

Inventor： Tae Shin KIM ,  Ji Hoon JEONG ,  Young Dae CHUNG ,  Jee Young LEE ,  Won-Geun KIM

IPC: H01L21/67 ,  G02B27/09 ,  G02B5/00 ,  B23K26/06 ,  B23K26/073 ,  B23K26/03

CPC classification number: H01L21/6708 ,  G02B27/0955 ,  G02B5/001 ,  G02B27/0927 ,  B23K26/0652 ,  B23K26/0734 ,  B23K26/034 ,  B23K26/0648 ,  B23K26/127

Abstract: The present invention provides a substrate treating facility, including: a process chamber including an annular beam emitting unit which emits an annular laser beam to a substrate and heats the substrate; and a laser beam generator configured to generate the laser beam emitted to the substrate through the annular beam emitting unit of the process chamber.

公开(公告)号：US20210183660A1

公开(公告)日：2021-06-17

申请号：US17115313

申请日：2020-12-08

Applicant: SEMES CO., LTD.

Inventor： Jung Suk GOH ,  Jae Seong LEE ,  Do Youn LIM ,  Kuk Saeng KIM ,  Young Dae CHUNG ,  Tae Shin KIM ,  Jee Young LEE ,  Won Geun KIM ,  Ji Hoon JEONG ,  Kwang Sup KIM ,  Pil Kyun HEO ,  Yoon Ki SA ,  Ye Rim YEON ,  Hyun YOON ,  Do Yeon KIM ,  Yong Jun SEO ,  Byeong Geun KIM ,  Young Je UM

IPC: H01L21/311 ,  H01L21/66 ,  H01L21/67

Abstract: Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.

公开(公告)号：US20210134614A1

公开(公告)日：2021-05-06

申请号：US17079445

申请日：2020-10-24

Applicant: SEMES CO., LTD.

Inventor： Young Dae CHUNG ,  Won Geun KIM ,  Jee Young LEE ,  Ji Hoon JEONG ,  Tae Shin KIM ,  Jung Suk GOH ,  Cheng Bin CUI ,  Ye Rim YEON

IPC: H01L21/67

Abstract: A substrate treatment apparatus includes a substrate support unit, a chemical supply unit supplying a chemical solution onto an upper surface of a substrate supported on the substrate support unit, a laser irradiation unit applying a laser pulse to the substrate to heat the substrate, and a controller controlling the laser irradiation unit to emit the laser pulse such that the substrate is repeatedly heated and cooled to maintain a preset temperature.

公开(公告)号：US20210118701A1

公开(公告)日：2021-04-22

申请号：US17073342

申请日：2020-10-17

Applicant: SEMES CO., LTD.

Inventor： Young Dae CHUNG ,  Won Geun KIM ,  Jee Young LEE ,  Ji Hoon JEONG ,  Tae Shin KIM ,  Se Hoon OH ,  Pil Kyun HEO ,  Hyun Goo PARK

IPC: H01L21/67 ,  H01L21/306

Abstract: Disclosed is a substrate treatment apparatus including a rotation unit that supports and rotates a substrate, a chemical discharge unit that discharges a chemical solution to the rotation unit, a chemical recovery unit disposed close to the rotation unit and configured to recover the chemical solution scattering from the rotation unit, and a laser irradiation unit that applies a laser beam to the substrate and heats the substrate.