公开(公告)号：US20230338993A1

公开(公告)日：2023-10-26

申请号：US17727659

申请日：2022-04-22

Applicant: SEMES CO., LTD.

Inventor： Yoon Ki SA ,  Do Yeon KIM ,  Pil Kyun HEO

IPC: B08B3/10 ,  B08B3/02

CPC classification number: B08B3/10 ,  B08B3/02 ,  B08B2203/007

Abstract: There are provided an apparatus for heating a chemical liquid that heats a chemical liquid using a heating element with a light source as a medium, and a system for treating a substrate with the apparatus. The apparatus for heating a chemical liquid includes: a flow path provided as a path through which a chemical liquid used to treat a substrate passes; a heating element disposed to surround at least a portion of the flow path; and a light source irradiating the heating element with light, wherein the heating element is heated using photon excitation, and heats the chemical liquid.

公开(公告)号：US20210183660A1

公开(公告)日：2021-06-17

申请号：US17115313

申请日：2020-12-08

Applicant: SEMES CO., LTD.

Inventor： Jung Suk GOH ,  Jae Seong LEE ,  Do Youn LIM ,  Kuk Saeng KIM ,  Young Dae CHUNG ,  Tae Shin KIM ,  Jee Young LEE ,  Won Geun KIM ,  Ji Hoon JEONG ,  Kwang Sup KIM ,  Pil Kyun HEO ,  Yoon Ki SA ,  Ye Rim YEON ,  Hyun YOON ,  Do Yeon KIM ,  Yong Jun SEO ,  Byeong Geun KIM ,  Young Je UM

IPC: H01L21/311 ,  H01L21/66 ,  H01L21/67

Abstract: Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.

公开(公告)号：US20210134617A1

公开(公告)日：2021-05-06

申请号：US17079439

申请日：2020-10-24

Applicant: SEMES CO., LTD.

Inventor： Yong Jun SEO ,  Ye Rim YEON ,  Pil Kyun HEO ,  Byeong Geun KIM ,  Yoon Ki SA ,  Jung Suk GOH ,  Do Yeon KIM ,  Hyun YOON ,  Young Je UM ,  Dong Ok AHN

IPC: H01L21/67 ,  G03F7/30 ,  H01L21/687

Abstract: According to an exemplary embodiment of the present invention, a substrate treatment apparatus includes a chamber member including a treatment space in which a substrate is to be treated, a substrate support unit installed in the treatment space and supporting a substrate, a chemical ejection unit connected to the chamber member and ejecting a chemical fluid to the substrate support unit, and a steam supply unit connected to the chamber member and supplying steam to the chamber member.

公开(公告)号：US20180182669A1

公开(公告)日：2018-06-28

申请号：US15841518

申请日：2017-12-14

Applicant: SEMES CO., LTD.

Inventor： Yoon Ki SA ,  Mong Ryong Lee

IPC: H01L21/768 ,  H01L21/288 ,  H01L23/48 ,  C25D13/12

Abstract: A method of filling a via hole and an apparatus for performing the same are disclosed. The method includes providing a filling material having a fluidity on a via hole formed in the substrate, forming an electric field through the substrate to fill the via hole with the filling material, and solidifying the filling material in the via hole. The apparatus includes a stage for supporting the substrate, upper and lower electrodes for forming the electric field, and a power supply connected with the upper and lower electrodes.