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1.发明授权公开(公告)号：US12113138B2
公开(公告)日：2024-10-08
申请号：US18194714
申请日：2023-04-03
IPC分类号： H01L31/02 , G02B3/06 , H01L27/146 , H01L31/0232 , H01L31/055 , H01L31/107 , H04N25/63
CPC分类号： H01L31/02027 , G02B3/06 , H01L27/14605 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/1463 , H01L27/14643 , H01L27/14649 , H01L31/02327 , H01L31/055 , H01L31/107 , H01L27/1464 , H04N25/63
摘要： An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. The light scattering structures may include a low-index material formed in trenches in the semiconductor substrate. One or more microlenses may focus light onto the semiconductor substrate. Areas of the semiconductor substrate that receive more light from the microlenses may have a higher density of light scattering structures to optimize light scattering while mitigating dark current.
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公开(公告)号：US11652176B2
公开(公告)日：2023-05-16
申请号：US16948105
申请日：2020-09-03
IPC分类号： H01L27/146 , H01L31/02 , H01L31/055 , H01L31/107 , H01L31/0232 , G02B3/06 , H04N25/63
CPC分类号： H01L31/02027 , G02B3/06 , H01L27/1463 , H01L27/14605 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/14643 , H01L27/14649 , H01L31/02327 , H01L31/055 , H01L31/107 , H01L27/1464 , H04N25/63
摘要： An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. The light scattering structures may include a low-index material formed in trenches in the semiconductor substrate. One or more microlenses may focus light onto the semiconductor substrate. Areas of the semiconductor substrate that receive more light from the microlenses may have a higher density of light scattering structures to optimize light scattering while mitigating dark current.
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公开(公告)号：US09998643B2
公开(公告)日：2018-06-12
申请号：US14667457
申请日：2015-03-24
CPC分类号： H04N5/2253 , B29C66/345 , B29C66/81455 , B29C66/8266 , H01L21/00 , H01L27/14601 , H01L27/14607 , H01L27/14618 , H01L27/14687 , H01L27/14698
摘要： A method for forming curved image sensors may include applying positive pressure to the face of an image sensor, forcing the image sensor to adhere the curved surface of a substrate. The pressure may be applied to the face of the image sensor in a variety of ways, including using pneumatic pressure, hydraulic pressure, or pressure from an elastic or inelastic solid. Processing may occur on either a single image sensor die or an image sensor wafer. When an image sensor wafer is processed, a substrate may be used that has a number of cavities defined by respective curved surfaces with each cavity corresponding to a respective image sensor. When pressure is applied to the image sensor, the image sensor may deform until the curvature of the image sensor matches the curvature of the curved surface of the underlying substrate.
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4.发明授权公开(公告)号：US10854665B2
公开(公告)日：2020-12-01
申请号：US16038422
申请日：2018-07-18
IPC分类号： H01L27/146 , H01L27/148
摘要： A semiconductor wafer has a plurality of non-rectangular semiconductor die with an image sensor region. The non-rectangular semiconductor die has a circular, elliptical, and shape with non-linear side edges form factor. The semiconductor wafer is singulated with plasma etching to separate the non-rectangular semiconductor die. A curved surface is formed in the image sensor region of the non-rectangular semiconductor die. The non-rectangular form factor effectively removes a portion of the base substrate material in a peripheral region of the semiconductor die to reduce stress concentration areas and neutralize buckling in the curved surface of the image sensor region. A plurality of openings or perforations can be formed in a peripheral region of a rectangular or non-rectangular semiconductor die to reduce stress concentration areas and neutralize buckling. A second semiconductor die can be formed in an area of the semiconductor wafer between the non-rectangular semiconductor die.
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公开(公告)号：US10797090B2
公开(公告)日：2020-10-06
申请号：US16460791
申请日：2019-07-02
IPC分类号： H01L27/146
摘要： An imaging system may include an image sensor with phase detection pixel groups for depth sensing or automatic focusing operations. Each phase detection pixel group may have two or more photosensitive regions covered by a single microlens so that each photosensitive region has an asymmetric angular response. The image sensor may be sensitive to both near-infrared (NIR) and visible light. Each phase detection pixel group may be designed to include light-scattering structures that increase NIR sensitivity while minimizing disruptions of phase detection and visible light performance. Deep trench isolation may be formed between adjacent photosensitive areas within the phase detection pixel group. The light-scattering structures may have a non-uniform distribution to minimize disruptions of phase detection performance.
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6.发明授权公开(公告)号：US10056428B2
公开(公告)日：2018-08-21
申请号：US15258783
申请日：2016-09-07
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/14687 , H01L27/14607 , H01L27/14632 , H01L27/14806
摘要： A semiconductor wafer has a plurality of non-rectangular semiconductor die with an image sensor region. The non-rectangular semiconductor die has a circular, elliptical, and shape with non-linear side edges form factor. The semiconductor wafer is singulated with plasma etching to separate the non-rectangular semiconductor die. A curved surface is formed in the image sensor region of the non-rectangular semiconductor die. The non-rectangular form factor effectively removes a portion of the base substrate material in a peripheral region of the semiconductor die to reduce stress concentration areas and neutralize buckling in the curved surface of the image sensor region. A plurality of openings or perforations can be formed in a peripheral region of a rectangular or non-rectangular semiconductor die to reduce stress concentration areas and neutralize buckling. A second semiconductor die can be formed in an area of the semiconductor wafer between the non-rectangular semiconductor die.
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公开(公告)号：US09883128B2
公开(公告)日：2018-01-30
申请号：US15160030
申请日：2016-05-20
发明人： Bartosz Piotr Banachowicz , Swarnal Borthakur , Marko Mlinar , Ulrich Boettiger , Andrew Eugene Perkins
CPC分类号： H04N5/369 , H04N5/355 , H04N5/35554 , H04N5/35581 , H04N5/3696 , H04N9/045
摘要： An image sensor may include a pixel array with high dynamic range functionality and phase detection pixels. The phase detection pixels may be arranged in phase detection pixel groups. Each phase detection pixel group may include three adjacent pixels arranged consecutively in a line. A single microlens may cover all three pixels in the phase detection pixel group, or two microlenses may combine to cover the three pixels in the phase detection pixel group. The edge pixels in each phase detection pixel group may have the same integration time and the same color. The middle pixel in each phase detection pixel group may have the same or different color as the edge pixels, and the same or different integration time as the edge pixels. Phase detection pixel groups may also be formed from two pixels that each are 1.5 times the size of neighboring pixels.
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