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    Microlens structures for semiconductor device with single-photon avalanche diode pixels
    7.
    发明授权
    Microlens structures for semiconductor device with single-photon avalanche diode pixels 有权

    公开(公告)号：US11626440B2

    公开(公告)日：2023-04-11

    申请号：US16684033

    申请日：2019-11-14

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Marc Allen Sulfridge ,  Swarnal Borthakur ,  Nathan Wayne Chapman

    IPC: H01L27/14 ,  H01L27/146 ,  H01L31/107

    Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by microlenses to direct light incident on the pixels onto photosensitive regions of the pixels and a containment grid with openings that surround each of the microlenses. During formation of the microlenses, the containment grid may prevent microlens material for adjacent SPAD pixels from merging. To ensure separation between the microlenses, the containment grid may be formed from material phobic to microlens material, or phobic material may be added over the containment grid material. Additionally, the containment grid may be formed from material that can absorb stray or off-angle light so that it does not reach the associated SPAD pixel, thereby reducing crosstalk during operation of the SPAD pixels.

    Backside illuminated global shutter pixels
    8.
    发明授权
    Backside illuminated global shutter pixels 有权

    公开(公告)号：US10432883B1

    公开(公告)日：2019-10-01

    申请号：US16005887

    申请日：2018-06-12

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Nathan Wayne Chapman ,  Swarnal Borthakur ,  Marc Allen Sulfridge

    IPC: H04N5/3745 ,  H04N5/232 ,  H01L27/146 ,  H01L25/16

    Abstract: Global shutter imaging pixels may include a charge storage region that receives charge from a respective photodiode. Global shutter imaging pixels may be formed as frontside illuminated imaging pixels or backside illuminated imaging pixels. Shielding charge storage regions from incident light may be important for image sensor performance. To shield charge storage regions in backside illuminated global shutter imaging pixels, shielding structures may be included over the charge storage region. The shielding structures may include backside trench isolation structures, a metal layer formed in a backside trench between backside trench isolation structures, and frontside deep trench isolation structures. The metal layer may have angled portions that reflect light towards the photodiodes.

    High dynamic range pixel with in-pixel light shield structures
    9.
    发明授权
    High dynamic range pixel with in-pixel light shield structures 有权

    公开(公告)号：US10312279B2

    公开(公告)日：2019-06-04

    申请号：US15799833

    申请日：2017-10-31

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Swarnal Borthakur ,  Marc Allen Sulfridge

    IPC: H01L31/062 ,  H01L27/146

    Abstract: Multi-photodiode image pixels may include sub-pixels with differing light sensitivities. Microlenses may be formed over the multi-photodiode image pixels so that light sensitivity of sub-pixels in an outer group of sub-pixels is enhanced. To prevent high angle light incident upon one of the sub-pixels of the image pixel from generating charges in a photosensitive region of another sub-pixel of the image pixel, intra-pixel isolation structures may be formed. Intra-pixel isolation structures may surround, and in some embodiments, overlap the light collecting region of an inner photodiode. When the intra-pixel isolation structures have a different index of refraction than light filtering material formed adjacent to the isolation structures, high angle light incident upon the isolation structures may be reflected back into the sub-pixel it was initially incident upon. Intra-pixel isolation structures may be formed entirely from optically transparent materials or a combination of optically transparent and opaque materials.

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