公开(公告)号：US20190097419A1

公开(公告)日：2019-03-28

申请号：US16125839

申请日：2018-09-10

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Mario M. PELELLA ,  Stephanie Marie BOHAICHUK

IPC: H02H9/04 ,  H01L27/02 ,  H01L23/60

Abstract: In some implementations, an apparatus can include a semiconductor region including an electrical device and a back-end region disposed on the semiconductor region. The back-end region can include a first terminal and a second terminal. The apparatus can include an insulator-metal transition (IMT) material electrically coupled between the first terminal and the second terminal.

公开(公告)号：US20240145515A1

公开(公告)日：2024-05-02

申请号：US18558593

申请日：2022-04-27

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR ,  Mario M. PELELLA ,  Chandrasekharan KOTHANDARAMAN ,  Marc Allen SULFRIDGE ,  Yusheng LIN ,  Larry Duane KINSMAN

IPC: H01L27/146 ,  H01L23/00

CPC classification number: H01L27/14634 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/19 ,  H01L24/20 ,  H01L24/94 ,  H01L24/96 ,  H01L27/14636 ,  H01L24/13 ,  H01L24/32 ,  H01L24/80 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/13025 ,  H01L2224/19 ,  H01L2224/211 ,  H01L2224/32225 ,  H01L2224/80357 ,  H01L2224/80379 ,  H01L2224/80896 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2924/05442

Abstract: An integrated circuit package (34, 34′, 34″) may be implemented by stacked first, second, and third integrated circuit dies (40, 50, 60). The first and second dies (40, 50) may be bonded to each other using corresponding inter-die connection structures (74-1, 84-1) at respective interfacial surfaces facing the other die. The second die (50) may also include a metal layer (84-2) for connecting to the third die (60) at its interfacial surface with the first die (40). The metal layer (84-2) may be connected to a corresponding inter-die connection structure (64) on the side of the third die (60) facing the second die (50) through a conductive through-substrate via (84-2) and an additional metal layer (102) in a redistribution layer (96) between the second and third dies (50, 60). The third die (60) may have a different lateral outline than the second die (50).