公开(公告)号：US20170025546A1

公开(公告)日：2017-01-26

申请号：US15286194

申请日：2016-10-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Chiho KOKUBO ,  Aiko SHIGA ,  Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Koji DAIRIKI ,  Koichiro TANAKA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/04

CPC classification number: H01L29/78675 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/127 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757

Abstract: A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel forming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.

Abstract translation: 首先形成在其一侧具有多个尖锐的凸顶部的半导体区域的第一形状，并且使用连续波激光束进行来自上述区域的辐射，以使半导体区域的第一形状结晶化。 在一条或多条线路中聚光的连续波激光束用于激光束。 蚀刻半导体区域的第一形状以形成其中形成沟道形成区域和源极和漏极区域的半导体区域的第二形状。 半导体区域的第二形状被设置成在从多个凸起端部延伸的各个晶体区域上形成沟道形成范围。 消除了与沟道形成区域相邻的半导体区域。

公开(公告)号：US20170062214A1

公开(公告)日：2017-03-02

申请号：US15350777

申请日：2016-11-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koichiro TANAKA ,  Hidekazu MIYAIRI ,  Aiko SHIGA ,  Akihisa SHIMOMURA ,  Atsuo ISOBE

IPC: H01L21/02 ,  H01L21/283 ,  B23K26/00 ,  B23K26/06 ,  B23K26/073 ,  H01L21/268 ,  H01L27/12

CPC classification number: H01L21/02675 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  B23K2101/40 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/268 ,  H01L21/283 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/14625

Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

Abstract translation: 本发明的特征在于，通过激光束倾斜地入射到凸透镜，发生像散等像，并且激光束的形状在照射表面或其附近被形成为线性。 由于本发明具有非常简单的结构，因此光学调节更容易，并且器件尺寸变得紧凑。 此外，由于光束相对于照射体倾斜入射，所以可以防止返回光束。

公开(公告)号：US20140113440A1

公开(公告)日：2014-04-24

申请号：US14145235

申请日：2013-12-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koichiro TANAKA ,  Hidekazu MIYAIRI ,  Aiko SHIGA ,  Akihisa SHIMOMURA ,  Atsuo ISOBE

IPC: H01L21/02 ,  H01L21/283 ,  H01L21/268

CPC classification number: H01L21/02675 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  B23K2101/40 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/268 ,  H01L21/283 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/14625

Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

Abstract translation: 本发明的特征在于，通过激光束倾斜地入射到凸透镜，发生像散等像，并且激光束的形状在照射表面或其附近被制成线性的。 由于本发明具有非常简单的结构，因此光学调节更容易，并且器件尺寸变得紧凑。 此外，由于光束相对于照射体倾斜入射，所以可以防止返回光束。