公开(公告)号：US20160311057A1

公开(公告)日：2016-10-27

申请号：US15202022

申请日：2016-07-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koichiro TANAKA ,  Hirotada OISHI

IPC: B23K26/06 ,  G02B27/09 ,  G02B3/00 ,  B23K26/073

CPC classification number: B23K26/0608 ,  B23K15/0093 ,  B23K15/10 ,  B23K26/0648 ,  B23K26/0732 ,  B23K26/0738 ,  B23K2103/56 ,  G02B3/0062 ,  G02B27/0927 ,  G02B27/0961 ,  G02B27/0966

Abstract: The present invention is to provide a laser irradiation technique for irradiating the irradiation surface with the laser beam having homogeneous intensity distribution using a cylindrical lens array without being affected by the intensity distribution of the original beam. A laser beam emitted from a laser oscillator is divided by two kinds of cylindrical lens arrays into a plurality of beams, which are two kinds of linear laser beams with their energy intensity distribution inverted each other, and the two kinds of linear laser beams are superposed in a minor-axis direction. This can form the linear laser beam having homogeneous intensity distribution on the irradiation surface.

公开(公告)号：US20140220768A1

公开(公告)日：2014-08-07

申请号：US14248425

申请日：2014-04-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Koichiro TANAKA ,  Tomoaki Moriwaka

IPC: H01L21/02 ,  H01L21/28

CPC classification number: G02B27/0955 ,  B23K26/06 ,  B23K26/0604 ,  B23K26/064 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  G02B27/09 ,  G02B27/095 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/28017 ,  H01L27/1285 ,  H01L27/3244 ,  H01L27/3295 ,  H01L33/08 ,  H01L51/5237 ,  H01L51/5246 ,  H01S3/005 ,  H01S5/4012 ,  H01S5/4025

Abstract: If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light with respect to a lens. To avoid this phenomenon, an optical element having a negative power such as a concave lens or a concave cylindrical lens is inserted to regulate the optical path length of the laser light and a convergent position is made coincident with a irradiation surface to form an image on the irradiation surface.

Abstract translation: 如果光学系统的光路长度减小并且照射表面上的激光长度增加，则会产生作为会聚位置根据激光的入射角或入射位置而偏离的现象的曲率 相对于镜头的光。 为了避免这种现象，插入具有负功率的光学元件，例如凹透镜或凹柱面透镜，以调节激光的光路长度，并且使会聚位置与照射表面一致以形成图像 照射面。

公开(公告)号：US20180190677A1

公开(公告)日：2018-07-05

申请号：US15897318

申请日：2018-02-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo ISOBE ,  Shunpei YAMAZAKI ,  Koji DAIRIKI ,  Hiroshi SHIBATA ,  Chiho KOKUBO ,  Tatsuya ARAO ,  Masahiko HAYAKAWA ,  Hidekazu MIYAIRI ,  Akihisa SHIMOMURA ,  Koichiro TANAKA ,  Mai AKIBA

IPC: H01L27/12 ,  B23K26/073 ,  H01L21/02 ,  H01L21/20 ,  H01L21/3213 ,  H01L21/84 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1222 ,  B23K26/0738 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02675 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/32139 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696 ,  Y10S118/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

公开(公告)号：US20170212354A1

公开(公告)日：2017-07-27

申请号：US15424316

申请日：2017-02-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Koichiro TANAKA ,  Tomoaki MORIWAKA

IPC: G02B27/09 ,  H01S3/00 ,  H01L21/268

CPC classification number: G02B27/0955 ,  B23K26/06 ,  B23K26/0604 ,  B23K26/064 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  G02B27/09 ,  G02B27/095 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/28017 ,  H01L27/1285 ,  H01L27/3244 ,  H01L27/3295 ,  H01L33/08 ,  H01L51/5237 ,  H01L51/5246 ,  H01S3/005 ,  H01S5/4012 ,  H01S5/4025

Abstract: If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light with respect to a lens. To avoid this phenomenon, an optical element having a negative power such as a concave lens or a concave cylindrical lens is inserted to regulate the optical path length of the laser light and a convergent position is made coincident with a irradiation surface to form an image on the irradiation surface.

公开(公告)号：US20140011343A1

公开(公告)日：2014-01-09

申请号：US14021439

申请日：2013-09-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koichiro TANAKA ,  Tomoaki MORIWAKA

IPC: H01L21/02

CPC classification number: H01L21/02592 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/067 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  H01L27/1285

Abstract: In the present invention, each laser light emitted from a plurality of lasers is divided, and laser light including at least one laser light that is emitted from a different laser and that has different energy distribution is synthesized with another such laser light, or laser light including at least one laser light that has different energy distribution is synthesized with another such laser light through a convex lens that is set at an angle to the direction each laser light travels, to form laser light having excellent uniformity in energy distribution.

Abstract translation: 在本发明中，从多个激光器发射的各激光被分割，并且使用另一个这样的激光合成包括从不同激光器发射并且具有不同能量分布的至少一个激光的激光或激光 包括具有不同能量分布的至少一种激光通过与每个激光行进的方向成一定角度的凸透镜与另一激光合成，以形成具有优异的能量分布均匀性的激光。

公开(公告)号：US20130112981A1

公开(公告)日：2013-05-09

申请号：US13727258

申请日：2012-12-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Koichiro TANAKA

IPC: G02F1/1368

CPC classification number: H01L21/02675 ,  G02F1/1368 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04

Abstract: In order to realize a semiconductor device of enhanced TFT characteristics, a semiconductor thin film is selectively irradiated with a laser beam at the step of crystallizing the semiconductor thin film by the irradiation with the laser beam. By way of example, only driver regions (103 in FIG. 1) are irradiated with the laser beam in a method of fabricating a display device of active matrix type. Thus, it is permitted to obtain the display device (such as liquid crystal display device or EL display device) of high reliability as comprises the driver regions (103) made of crystalline semiconductor films, and a pixel region (102) made of an amorphous semiconductor film.

Abstract translation: 为了实现增强TFT特性的半导体器件，在通过激光束的照射使半导体薄膜结晶的步骤中，用激光束选择性地照射半导体薄膜。 作为示例，在制造有源矩阵型显示装置的方法中，仅使用激光束照射驱动器区域（图1中的103）。 因此，可以获得具有高可靠性的显示装置（诸如液晶显示装置或EL显示装置），其包括由结晶半导体膜制成的驱动器区域（103）和由非晶体形成的像素区域（102） 半导体膜。

公开(公告)号：US20210118916A1

公开(公告)日：2021-04-22

申请号：US17133708

申请日：2020-12-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo ISOBE ,  Shunpei YAMAZAKI ,  Koji DAIRIKI ,  Hiroshi SHIBATA ,  Chiho KOKUBO ,  Tatsuya ARAO ,  Masahiko HAYAKAWA ,  Hidekazu MIYAIRI ,  Akihisa SHIMOMURA ,  Koichiro TANAKA ,  Mai AKIBA

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/3213 ,  H01L21/84 ,  H01L29/66 ,  H01L29/786 ,  B23K26/073

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries rom lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

公开(公告)号：US20190341404A1

公开(公告)日：2019-11-07

申请号：US16515117

申请日：2019-07-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo ISOBE ,  Shunpei YAMAZAKI ,  Koji DAIRIKI ,  Hiroshi SHIBATA ,  Chiho KOKUBO ,  Tatsuya ARAO ,  Masahiko HAYAKAWA ,  Hidekazu MIYAIRI ,  Akihisa SHIMOMURA ,  Koichiro TANAKA ,  Mai AKIBA

IPC: H01L27/12 ,  H01L21/3213 ,  H01L21/02 ,  H01L29/786 ,  H01L21/84 ,  B23K26/073 ,  H01L21/20 ,  H01L29/66

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

公开(公告)号：US20170077444A1

公开(公告)日：2017-03-16

申请号：US15344036

申请日：2016-11-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Koichiro TANAKA ,  Masaaki HIROKI ,  Hisao IKEDA ,  Kengo AKIMOTO

IPC: H01L51/52

CPC classification number: H01L51/5246 ,  H01L51/50 ,  H01L51/5212 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/525 ,  H01L51/5253 ,  H01L51/5256 ,  H01L51/5259 ,  H01L51/5275 ,  H01L2251/50 ,  H01L2251/53 ,  H01L2251/5307 ,  H01L2251/5323 ,  H01L2251/5338 ,  H01L2251/5361

Abstract: A highly reliable light-emitting device which includes an organic EL element and is lightweight is provided. The light-emitting device includes a first organic resin layer; a first glass layer over the first organic resin layer; a light-emitting element over the first glass layer; a second glass layer over the light-emitting element; and a second organic resin layer over the second glass layer. The first organic resin layer and the first glass layer each have a property of transmitting visible light. The thickness of the first glass layer and the thickness of the second glass layer are independently greater than or equal to 25 μm and less than or equal to 100 μm. The light-emitting element includes a first electrode having a property of transmitting visible light, a layer containing a light-emitting organic compound, and a second electrode stacked in this order from the first glass layer side.

Abstract translation: 提供了包括有机EL元件并且重量轻的高度可靠的发光装置。 发光装置包括第一有机树脂层; 第一有机树脂层上的第一玻璃层; 在第一玻璃层上的发光元件; 在所述发光元件上方的第二玻璃层; 和在第二玻璃层上的第二有机树脂层。 第一有机树脂层和第一玻璃层各具有透射可见光的性质。 第一玻璃层的厚度和第二玻璃层的厚度独立地大于或等于25μm且小于或等于100μm。 发光元件包括具有透射可见光的特性的第一电极，含有发光有机化合物的层和从第一玻璃层侧依次层叠的第二电极。

公开(公告)号：US20170025546A1

公开(公告)日：2017-01-26

申请号：US15286194

申请日：2016-10-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Chiho KOKUBO ,  Aiko SHIGA ,  Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Koji DAIRIKI ,  Koichiro TANAKA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/04

CPC classification number: H01L29/78675 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/127 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757

Abstract: A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel forming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.

Abstract translation: 首先形成在其一侧具有多个尖锐的凸顶部的半导体区域的第一形状，并且使用连续波激光束进行来自上述区域的辐射，以使半导体区域的第一形状结晶化。 在一条或多条线路中聚光的连续波激光束用于激光束。 蚀刻半导体区域的第一形状以形成其中形成沟道形成区域和源极和漏极区域的半导体区域的第二形状。 半导体区域的第二形状被设置成在从多个凸起端部延伸的各个晶体区域上形成沟道形成范围。 消除了与沟道形成区域相邻的半导体区域。