公开(公告)号：US11923206B2

公开(公告)日：2024-03-05

申请号：US17989861

申请日：2022-11-18

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

IPC分类号： H01L27/12 ,  G02F1/1333 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/477 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L21/477 ,  G02F1/133345 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

公开(公告)号：US11923204B2

公开(公告)日：2024-03-05

申请号：US17944551

申请日：2022-09-14

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L21/324 ,  H01L21/465 ,  H01L21/477 ,  H01L29/04 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L21/465 ,  H01L21/02565 ,  H01L21/28176 ,  H01L21/324 ,  H01L21/477 ,  H01L29/04 ,  H01L29/045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

公开(公告)号：US11626521B2

公开(公告)日：2023-04-11

申请号：US17083485

申请日：2020-10-29

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L27/32 ,  H01L51/52 ,  H01L29/24

摘要： An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.

公开(公告)号：US11594555B2

公开(公告)日：2023-02-28

申请号：US17223276

申请日：2021-04-06

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunichi Ito ,  Toshinari Sasaki ,  Miyuki Hosoba ,  Junichiro Sakata

IPC分类号： H01L27/12 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66 ,  H01L29/786 ,  G09G3/20

摘要： An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.

公开(公告)号：US11417754B2

公开(公告)日：2022-08-16

申请号：US17026486

申请日：2020-09-21

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC分类号： H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H01L29/423

摘要： It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.

公开(公告)号：US11106101B2

公开(公告)日：2021-08-31

申请号：US16867620

申请日：2020-05-06

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Miyuki Hosoba ,  Junichiro Sakata ,  Hideaki Kuwabara

IPC分类号： H01L29/786 ,  H01L27/12 ,  G02F1/1362 ,  H01L29/66 ,  H01L29/45 ,  H01L29/51 ,  H01L27/32 ,  G02F1/167 ,  G02F1/136 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/1368 ,  G09G3/34 ,  G09G3/36

摘要： An object is to provide a semiconductor device having a structure in which parasitic capacitance between wirings can be efficiently reduced. In a bottom gate thin film transistor using an oxide semiconductor layer, an oxide insulating layer used as a channel protection layer is formed above and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer, and at the same time an oxide insulating layer covering a peripheral portion (including a side surface) of the stacked oxide semiconductor layer is formed. Further, a source electrode layer and a drain electrode layer are formed in a manner such that they do not overlap with the channel protection layer. Thus, a structure in which an insulating layer over the source electrode layer and the drain electrode layer is in contact with the oxide semiconductor layer is provided.

公开(公告)号：US10804409B2

公开(公告)日：2020-10-13

申请号：US16158478

申请日：2018-10-12

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto

IPC分类号： H01L29/12 ,  H01L29/786 ,  H01L27/12 ,  H01L29/24

摘要： Many of the physical properties of a silicon semiconductor have already been understood, whereas many of the physical properties of an oxide semiconductor have been still unclear. In particular, an adverse effect of an impurity on an oxide semiconductor has been still unclear. In view of the above, a structure is disclosed in which an impurity that influences electrical characteristics of a semiconductor device including an oxide semiconductor layer is prevented or is eliminated. A semiconductor device which includes a gate electrode, an oxide semiconductor layer, and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer and in which the nitrogen concentration in the oxide semiconductor layer is 1×1020 atoms/cm3 or less is provided.

公开(公告)号：US10790383B2

公开(公告)日：2020-09-29

申请号：US16385396

申请日：2019-04-16

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC分类号： H01L29/24 ,  H01L29/66 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786

摘要： It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.

公开(公告)号：US10784465B2

公开(公告)日：2020-09-22

申请号：US16031035

申请日：2018-07-10

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Hisao Ikeda ,  Hiroki Ohara ,  Makoto Hosoba ,  Junichiro Sakata ,  Shunichi Ito

IPC分类号： H01L51/52 ,  H01L51/50 ,  H01L27/32 ,  G09G3/32 ,  G09G3/3291 ,  G02F1/1362

摘要： There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. A light-emitting element includes a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

公开(公告)号：US10680111B2

公开(公告)日：2020-06-09

申请号：US16121708

申请日：2018-09-05

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Miyuki Hosoba ,  Junichiro Sakata ,  Hideaki Kuwabara

IPC分类号： H01L27/00 ,  H01L29/00 ,  G02F1/1362 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/45 ,  H01L29/51 ,  G02F1/167 ,  G02F1/136 ,  H01L27/32 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/1368 ,  G09G3/34 ,  G09G3/36

摘要： An object is to provide a semiconductor device having a structure in which parasitic capacitance between wirings can be efficiently reduced. In a bottom gate thin film transistor using an oxide semiconductor layer, an oxide insulating layer used as a channel protection layer is formed above and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer, and at the same time an oxide insulating layer covering a peripheral portion (including a side surface) of the stacked oxide semiconductor layer is formed. Further, a source electrode layer and a drain electrode layer are formed in a manner such that they do not overlap with the channel protection layer. Thus, a structure in which an insulating layer over the source electrode layer and the drain electrode layer is in contact with the oxide semiconductor layer is provided.