公开(公告)号：US20030094615A1

公开(公告)日：2003-05-22

申请号：US10294839

申请日：2002-11-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

IPC: H01L029/04

CPC classification number: H01L27/3244 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3276 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78633 ,  H01L51/524 ,  H01L51/5246 ,  H01L51/5256 ,  H01L51/5259 ,  H01L51/5284 ,  H01L2227/323

Abstract: The reliability of a light-emitting device constituted by a combination of a TFT and a light-emitting element is to be improved. A light-emitting element is formed between a first substrate and a second substrate. The light-emitting device is formed over a first insulating layer made of an organic compound and a second insulating layer made of an inorganic insulating material containing nitrogen formed on the surface of the first insulating layer. In an outer circumferential part of a display area formed by the light-emitting element, a shield pattern surrounding the display area is formed by metal wiring on the second insulating layer, and the first substrate and the second substrate are fixed to each other with an adhesive resin formed in contact with the shield pattern.

Abstract translation: 提高由TFT和发光元件的组合构成的发光装置的可靠性。 在第一基板和第二基板之间形成发光元件。 发光器件形成在由有机化合物制成的第一绝缘层和由形成在第一绝缘层的表面上的含氮的无机绝缘材料制成的第二绝缘层上。 在由发光元件形成的显示区域的外周部分中，通过第二绝缘层上的金属布线形成围绕显示区域的屏蔽图案，并且第一基板和第二基板被固定在一起 形成为与屏蔽图案接触的粘合树脂。

公开(公告)号：US20040018797A1

公开(公告)日：2004-01-29

申请号：US10621989

申请日：2003-07-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Murakami ,  Ritsuko Nagao ,  Masayuki Sakakura ,  Misako Nakazawa ,  Noriko Miyagi ,  Hisao Ikeda ,  Kaoru Tsuchiya ,  Ayumi Ishigaki ,  Masahiro Takahashi ,  Noriyuki Matsuda ,  Hiroki Ohara

IPC: H01J009/00 ,  H01J009/24

CPC classification number: H01L27/3246 ,  H01L27/3258 ,  H01L51/5206

Abstract: An object of the present invention is to reduce or eliminate the occurrence of a variety of failure modes (shrink, dark spot and the like) in a light emitting element having an organic compound. The present invention suppresses a non-light emitting region generated immediately after a light emitting element has been fabricated by making the barrier 111 have a curved surface having a radius of curvature at the upper portion or lower portion, washes the surface of the anode 110 with a porous sponge in order to remove minute grains dotted on the surface of the anode, and suppresses the occurrence of a shrink by performing the vacuum heating in order to remove absorbed water of a whole of the substrate on which a TFT and a barrier have been provided immediately before the layer 112 containing an organic compound is formed.

Abstract translation: 本发明的目的是减少或消除具有有机化合物的发光元件中的各种故障模式（收缩，暗点等）的发生。 本发明通过使阻挡层111具有在上部或下部具有曲率半径的曲面来抑制在制造发光元件之后立即产生的非发光区域，用阳极110的表面以 多孔海绵，以去除阳极表面上的微小颗粒，并且通过进行真空加热来抑制发生收缩，以除去其上已经有TFT和屏障的整个基板的吸收水 在形成含有有机化合物的层112之前提供。

公开(公告)号：US20030129790A1

公开(公告)日：2003-07-10

申请号：US10290478

申请日：2002-11-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

IPC: H01L021/00

CPC classification number: H01L27/3244 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3246 ,  H01L29/78621 ,  H01L29/78627 ,  H01L51/5234 ,  H01L51/5253 ,  H01L2251/5315 ,  H01L2251/566

Abstract: The purpose of the invention is to improve reliability of a light emitting apparatus comprising a TFT and organic light emitting elements. The light emitting apparatus according to the invention having a thin film transistor and a light emitting element, comprises; a first inorganic insulation layer on the lower surface of a semiconductor layer, a second inorganic insulation layer on the upper surface of agate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, a wiring layer extending on the third inorganic insulation layer, a second organic insulation layer overlapped with the end of the wiring layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the wiring layer, a cathode layer formed in contact with the wiring layer and having side end overlapped with the fourth inorganic insulation layer, and an organic compound layer formed in contact with the cathode layer and the fourth inorganic insulation layer and comprising light emitting material, and an anode layer formed in contact with the organic compound layer comprising the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.

Abstract translation: 本发明的目的是提高包括TFT和有机发光元件的发光装置的可靠性。 根据本发明的具有薄膜晶体管和发光元件的发光装置包括： 在半导体层的下表面上的第一无机绝缘层，玛瑙电极的上表面上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层 在第三无机绝缘层上延伸的布线层，与布线层的端部重叠并且具有35〜45度的倾斜角的第二有机绝缘层，形成在第三无机绝缘层的上表面和侧面的第四无机绝缘层 所述第二有机绝缘层在所述布线层上具有开口，形成为与所述布线层接触并且具有与所述第四无机绝缘层重叠的侧端的阴极层和与所述阴极层接触形成的有机化合物层和 第四无机绝缘层，并且包括发光材料，以及形成为与所述发光材料接触的阳极层 包含所述发光材料的有机化合物层，其中所述第三无机绝缘层和所述第四无机绝缘层由氮化硅或氮化铝形成。

公开(公告)号：US20030089991A1

公开(公告)日：2003-05-15

申请号：US10289261

申请日：2002-11-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

IPC: H01L023/48

CPC classification number: H01L27/3244 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3246 ,  H01L27/3258 ,  H01L29/16 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78696 ,  H01L51/5008 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/566

Abstract: The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.

Abstract translation: 本发明的目的是提高包括TFT和有机发光元件的发光装置的可靠性。 根据本发明的具有薄膜晶体管和发光元件的发光装置包括： 栅电极上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层，形成在第三无机绝缘层上的阳极层，第二有机绝缘层 与阳极层的端部重叠并且具有35度至45度的倾斜角度;形成在第二有机绝缘层的上表面和侧表面上并且在阳极层上具有开口的第四无机绝缘层，有机化合物 形成为与阳极层和第四无机绝缘层接触且含有发光材料的层，以及与含有发光材料的有机化合物层接触形成的阴极层，其中第三无机绝缘层和第四无机绝缘层 由氮化硅或氮化铝形成。

公开(公告)号：US20030025136A1

公开(公告)日：2003-02-06

申请号：US10245744

申请日：2002-09-18

Applicant: Semiconductor Energy Laboratory co., Ltd.

Inventor： Hongyong Zhang ,  Masayuki Sakakura ,  Hideaki Kuwabara

IPC: G02F001/13 ,  H01L029/94 ,  H01L031/119

CPC classification number: H04N1/00129 ,  G02F1/133345 ,  G02F1/135 ,  G02F1/136227 ,  G02F1/13624 ,  G02F1/136286 ,  G02F2001/13312 ,  G02F2001/13629 ,  H01L27/12 ,  H01L27/14665 ,  H04M1/0264 ,  H04M1/0266 ,  H04N1/00127 ,  H04N1/028 ,  H04N1/02805

Abstract: A display device using a novel semiconductor device, which includes a pixel matrix, an image sensor, and a peripheral circuit for driving those, that is, which has both a camera function and a display function, and is made intelligent, is provided and a method of manufacturing the same is also provided. One pixel includes a semiconductor device for display and a semiconductor for light reception, that is, one pixel includes semiconductor devices (insulated gate-type field effect semiconductor device) for controlling both display and light reception, so that the display device having a picture reading function is made miniaturized and compact.

Abstract translation: 提供了一种使用新颖的半导体器件的显示装置，其包括像素矩阵，图像传感器和用于驱动它们的外围电路，即具有相机功能和显示功能，并且是智能的。 还提供了制造该方法的方法。 一个像素包括用于显示的半导体器件和用于光接收的半导体，即，一个像素包括用于控制显示和光接收的半导体器件（绝缘栅型场效应半导体器件），使得具有图像读取的显示器件 功能小型化，小巧化。

公开(公告)号：US20040214359A1

公开(公告)日：2004-10-28

申请号：US10848146

申请日：2004-05-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hongyong Zhang ,  Masayuki Sakakura

IPC: H01L021/00

CPC classification number: G02F1/133553 ,  G02F1/133512

Abstract: An electronic device having a long life and high quality pixel unit, said electronic device comprising a plurality of active elements, an insulator layer which covers the plurality of active elements, and a pixel region having placed thereon a plurality of pixel electrodes and being formed on the insulator layer, wherein, the insulator layer comprises a groove portion having an opening which is superposed on the interstice between the neighboring pixel electrodes, and said groove portion comprises an insulating light absorber buried therein.

Abstract translation: 一种具有长寿命和高质量像素单元的电子设备，所述电子设备包括多个有源元件，覆盖多个有源元件的绝缘体层和其上放置有多个像素电极的像素区域，并形成在 绝缘体层，其中，绝缘体层包括具有重叠在相邻像素电极之间的间隙的开口的凹槽部分，并且所述凹槽部分包括埋在其中的绝缘光吸收体。

公开(公告)号：US20030052850A1

公开(公告)日：2003-03-20

申请号：US10288958

申请日：2002-11-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hongyong Zhang ,  Masayuki Sakakura

IPC: G09G003/36

CPC classification number: G06F1/1616 ,  G02F1/133 ,  G02F1/1339 ,  G02F1/1362 ,  G02F1/136277 ,  G02F2001/13312 ,  G06F1/1637 ,  G06F1/1686

Abstract: A liquid crystal display apparatus containing an image sensor, which comprises a liquid crystal display part comprising an active matrix circuit, a peripheral driver circuit for driving the active matrix circuit, and a sensor part, integrated on one substrate, wherein the sensor part is sealed and protected with a sealing part and a counter substrate.

公开(公告)号：US20010030279A1

公开(公告)日：2001-10-18

申请号：US09882611

申请日：2001-06-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hongyong Zhang ,  Masayuki Sakakura

IPC: H01L031/00

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14665 ,  H01L31/02327 ,  Y10S438/948

Abstract: There is provided a laminated type photoelectric converter whose sensitivity is enhanced uniformly. In the photoelectric converter in which a photoelectric conversion device is laminated above a signal transfer device, the sensitivity is enhanced by providing bends on a lower electrode of the photoelectric conversion device and by confining light uniformly.

Abstract translation: 提供了灵敏度均匀增强的层叠型光电转换器。 在信号传送装置上层叠光电转换装置的光电转换装置中，通过在光电转换装置的下部电极上设置弯曲并均匀地限制光线来提高灵敏度。

公开(公告)号：US20040263740A1

公开(公告)日：2004-12-30

申请号：US10868920

申请日：2004-06-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masayuki Sakakura ,  Hiromichi Godo ,  Kaoru Tsuchiya

IPC: G02F001/1333

CPC classification number: H01L51/5246 ,  H01L23/564 ,  H01L27/124 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L33/44 ,  H01L51/5237 ,  H01L2227/323 ,  H01L2251/5323 ,  H05B33/04 ,  H05B33/14 ,  Y10T428/24777

Abstract: A novel display device with higher reliability having a structure of blocking moisture and oxygen, which deteriorate the characteristics of the display device, from penetrating through a sealing region and a method of manufacturing thereof is provided. According to the present invention, a display device and a method of manufacturing the same comprising: a display portion formed by aligning a light-emitting element using an organic light-emitting material between a pair of substrate, wherein the display portion is formed on an insulating layer formed on any one of the substrates, the pair of substrates is bonded to each other with a sealing material formed over the insulating layer while surrounding a periphery of the display portion, at least one layer of the insulating layer is made of an organic resin material, the periphery has a first region and a second region, the insulating layer in the first region has an opening covered with a protective film, the sealing material is formed in contact with the opening and the protective film, an outer edge portion of the insulating layer in the second region is covered with the protective film or the sealing material.

Abstract translation: 提供了一种具有较高可靠性的具有阻挡水分和氧气结构，从而使显示装置的特性劣化的新型显示装置不会渗入密封区域及其制造方法。 根据本发明，一种显示装置及其制造方法，包括：显示部分，其通过使用有机发光材料在一对基板之间对准发光元件而形成，其中所述显示部分形成在 绝缘层形成在任何一个基板上，一对基板通过形成在绝缘层上的密封材料彼此接合，同时围绕显示部分的周围，至少一层绝缘层由有机物 树脂材料的周边具有第一区域和第二区域，第一区域中的绝缘层具有覆盖有保护膜的开口，密封材料形成为与开口和保护膜接触，外部边缘部分 第二区域中的绝缘层被保护膜或密封材料覆盖。

公开(公告)号：US20040217357A1

公开(公告)日：2004-11-04

申请号：US10861365

申请日：2004-06-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hongyong Zhang ,  Masayuki Sakakura

IPC: H01L029/04

CPC classification number: H01L27/1214 ,  G02F1/13454 ,  G02F2001/13312 ,  G02F2001/13324 ,  H01L27/142 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14665 ,  H01L27/14678 ,  H01L27/14687 ,  H01L27/14692 ,  H01L31/02164 ,  Y02E10/50

Abstract: In an active matrix display device integrated with peripheral drive circuits, an image sensor is provided on the same substrate as a pixel matrix and peripheral drive circuits. The image sensor is formed on the substrate having pixel electrodes, pixel TFTs connected to the pixel electrodes and CMOS-TFTs for driving the pixel TFTs. The light receiving unit of the image sensor has light receiving elements having a photoelectric conversion layer and light receiving TFTs. These TFTs are produced in the same step. The lower electrode and transparent electrode of the light receiving element are produced by patterning the same film as the light shielding film and the pixel electrodes arranged in the pixel matrix.

Abstract translation: 在与外围驱动电路集成的有源矩阵显示装置中，图像传感器设置在与像素矩阵和外围驱动电路相同的基板上。 图像传感器形成在具有像素电极的基板上，连接到像素电极的像素TFT和用于驱动像素TFT的CMOS-TFT。 图像传感器的光接收单元具有光接收元件和光接收TFT。 这些TFT以相同的步骤制造。 光接收元件的下电极和透明电极通过图案化与遮光膜和排列在像素矩阵中的像素电极相同的膜来制造。