公开(公告)号：US20230326955A1

公开(公告)日：2023-10-12

申请号：US18022304

申请日：2021-08-12

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Sachiaki TEZUKA ,  Haruyuki BABA ,  Yuji EGI ,  Yasuhiro JINBO ,  Yujiro SAKURADA ,  Takeshi AOKI

IPC分类号： H01L21/20 ,  H01L21/3115

CPC分类号： H01L28/60 ,  H01L21/3115

摘要： A semiconductor device with a small variation in characteristics is provided. In a manufacturing method of a semiconductor device including a capacitor with reduced leak current, a first conductor is formed; a second insulator is formed over the first conductor; a third insulator is formed over the second insulator; a second conductor is formed over the third insulator; a fourth insulator is deposited over the second conductor and the third insulator; by heat treatment, hydrogen contained in the third insulator diffuses into or is absorbed by the second insulator; the first conductor is one electrode of the capacitor; the second conductor is the other electrode of the capacitor; and each of the second insulator and the third insulator is a dielectric of the capacitor.

公开(公告)号：US20230326751A1

公开(公告)日：2023-10-12

申请号：US18041251

申请日：2021-08-06

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Yuji EGI ,  Yasuhiro JINBO ,  Yujiro SAKURADA

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/40

CPC分类号： H01L21/02565 ,  H01L21/0262 ,  H01L29/7869 ,  C23C16/405 ,  C23C16/45527

摘要： A metal oxide with excellent thickness uniformity is provided. A method for manufacturing a metal oxide with reduced hydrogen concentration in SIMS analysis includes a first step of introducing a precursor and a carrier/purge gas; a second step of stopping the introduction of the precursor and exhausting the precursor; a third step of introducing an oxidizing gas; and a fourth step of stopping the introduction of the oxidizing gas and exhausting the oxidizing gas. The first step to the fourth step are performed in a temperature range higher than or equal to 210° C. and lower than or equal to 300° C.

公开(公告)号：US20230274935A1

公开(公告)日：2023-08-31

申请号：US18109305

申请日：2023-02-14

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Yuji EGI ,  Yasuhiro JINBO ,  Yujiro SAKURADA

IPC分类号： H01L21/02 ,  H01L29/786 ,  H01L29/51 ,  H01L21/8234

CPC分类号： H01L21/02565 ,  H01L21/02614 ,  H01L29/7869 ,  H01L29/78696 ,  H01L29/517 ,  H01L21/823412

摘要： A semiconductor device having favorable electrical characteristics is provided. A metal oxide is formed over a substrate by the steps of: introducing a first precursor into a chamber in which the substrate is provided; introducing a first oxidizer after the introduction of the first precursor; introducing a second precursor after the introduction of the first oxidizer; and introducing a second oxidizer after the introduction of the second precursor.

公开(公告)号：US20210233769A1

公开(公告)日：2021-07-29

申请号：US16972413

申请日：2019-05-31

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Yuji EGI ,  Yasuhiro JINBO ,  Yujiro SAKURADA

IPC分类号： H01L21/02

摘要： A semiconductor device having favorable electrical characteristics is provided. A metal oxide is formed over a substrate by the steps of: introducing a first precursor into a chamber in which the substrate is provided; introducing a first oxidizer after the introduction of the first precursor; introducing a second precursor after the introduction of the first oxidizer; and introducing a second oxidizer after the introduction of the second precursor.

公开(公告)号：US20230113593A1

公开(公告)日：2023-04-13

申请号：US17915211

申请日：2021-03-19

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Yoshihiro KOMATSU ,  Shota MIZUKAMI ,  Shinobu KAWAGUCHI ,  Hiromi SAWAI ,  Yasumasa YAMANE ,  Yuji EGI ,  Yujiro SAKURADA ,  Shinya SASAGAWA

IPC分类号： H01L29/423 ,  H01L29/417 ,  H01L29/51 ,  H01L21/02

摘要： A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor film, a source electrode and a drain electrode over the oxide semiconductor film, an interlayer insulating film placed to cover the oxide semiconductor film, the source electrode, and the drain electrode, a first gate insulating film over the oxide semiconductor film, a second gate insulating film over the first gate insulating film, and a gate electrode over the second gate insulating film. The interlayer insulating film has an opening overlapping with a region between the source electrode and the drain electrode, the first gate insulating film, the second gate insulating film, and the gate electrode are placed in the opening of the interlayer insulating film, the first gate insulating film includes oxygen and aluminum, and the first gate insulating film includes a region thinner that is than the second gate insulating film.

公开(公告)号：US20150287831A1

公开(公告)日：2015-10-08

申请号：US14677168

申请日：2015-04-02

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Tetsuhiro TANAKA ,  Yujiro SAKURADA ,  Yutaka OKAZAKI

IPC分类号： H01L29/786 ,  H01L23/29 ,  H01L23/31

CPC分类号： H01L29/7869 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes an oxide semiconductor film, a source electrode, a drain electrode, a gate insulating film, a gate electrode, and an insulating film. The source electrode includes a region in contact with the oxide semiconductor film. The drain electrode includes a region in contact with the oxide semiconductor film. The gate insulating film is provided between the oxide semiconductor film and the gate electrode. The insulating film is provided over the gate electrode and over the gate insulating film. The insulating film includes a first portion and a second portion. The first portion includes a step portion. The second portion includes a non-step portion. The first portion includes a portion with a first thickness. The second portion includes a portion with a second thickness. The second thickness is larger than or equal to 1.0 time and smaller than or equal to 2.0 times the first thickness.

摘要翻译： 半导体器件包括氧化物半导体膜，源电极，漏电极，栅极绝缘膜，栅电极和绝缘膜。 源电极包括与氧化物半导体膜接触的区域。 漏极包括与氧化物半导体膜接触的区域。 栅极绝缘膜设置在氧化物半导体膜和栅电极之间。 绝缘膜设置在栅极上方和栅极绝缘膜上方。 绝缘膜包括第一部分和第二部分。 第一部分包括台阶部分。 第二部分包括非步骤部分。 第一部分包括具有第一厚度的部分。 第二部分包括具有第二厚度的部分。 第二厚度大于或等于1.0倍且小于或等于第一厚度的2.0倍。