公开(公告)号：US20210288210A1

公开(公告)日：2021-09-16

申请号：US17333402

申请日：2021-05-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI

IPC: H01L33/00 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: An object is to provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability and a method for manufacturing the semiconductor device with high mass productivity. A main point is to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer and to foiiii an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer be used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer be used as a source region and a drain region.

公开(公告)号：US20200264471A1

公开(公告)日：2020-08-20

申请号：US16865672

申请日：2020-05-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi YOKOYAMA ,  Shigeki KOMORI ,  Manabu SATO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: G02F1/1333 ,  G02F1/1362 ,  G02F1/1343

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

公开(公告)号：US20160190177A1

公开(公告)日：2016-06-30

申请号：US15063737

申请日：2016-03-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Rihito WADA ,  Yoko CHIBA

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L27/1225 ,  G02F1/13392 ,  G02F1/13458 ,  G02F2001/13398 ,  G09G2300/0804 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869 ,  H01L51/5221

Abstract: A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.

Abstract translation: 显示装置包括其中像素电极层布置在矩阵中的像素部分，并且相应于像素电极设置具有至少两种具有不同量的氧的氧化物半导体层的组合的倒置交错薄膜晶体管 层。 在该显示装置的像素部的周围，设置有通过与像素电极层相同的材料形成的导电层与形成在对置基板上的公共电极层电连接的焊盘部。 通过提供适合于设置在显示面板中的焊盘部分的结构，实现了本发明防止由于各种显示装置中的薄膜分离引起的缺陷的一个反对意见。

公开(公告)号：US20150362806A1

公开(公告)日：2015-12-17

申请号：US14837599

申请日：2015-08-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Tomoya FUTAMURA ,  Takahiro KASAHARA

IPC: G02F1/1362 ,  H01L27/12

CPC classification number: G02F1/136204 ,  H01L27/0248 ,  H01L27/1225 ,  H01L27/124 ,  H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.

Abstract translation: 为了利用包括氧化物半导体的显示装置的特性，需要具有适当结构和占用面积小的保护电路等。 保护电路使用非线性元件形成，该非线性元件包括覆盖栅电极的栅极绝缘膜; 栅绝缘膜上的第一氧化物半导体层; 覆盖与第一氧化物半导体层的沟道形成区重叠的区域的沟道保护层; 以及通过层叠导电层和第二氧化物半导体层并在第一氧化物半导体层上形成的第一布线层和第二布线层。 栅电极连接到扫描线或信号线，第一布线层或第二布线层直接连接到栅电极。

公开(公告)号：US20250020962A1

公开(公告)日：2025-01-16

申请号：US18904123

申请日：2024-10-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi YOKOYAMA ,  Shigeki KOMORI ,  Manabu SATO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1343

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

公开(公告)号：US20230129465A1

公开(公告)日：2023-04-27

申请号：US18085689

申请日：2022-12-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi YOKOYAMA ,  Shigeki KOMORI ,  Manabu SATO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1343

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

公开(公告)号：US20210333668A1

公开(公告)日：2021-10-28

申请号：US17366474

申请日：2021-07-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi YOKOYAMA ,  Shigeki KOMORI ,  Manabu SATO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1343

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

公开(公告)号：US20190027640A1

公开(公告)日：2019-01-24

申请号：US16141187

申请日：2018-09-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI

IPC: H01L33/00 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786

Abstract: An object is to provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability and a method for manufacturing the semiconductor device with high mass productivity. A main point is to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer and to form an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer be used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer be used as a source region and a drain region.

公开(公告)号：US20150301395A1

公开(公告)日：2015-10-22

申请号：US14746885

申请日：2015-06-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi YOKOYAMA ,  Shigeki KOMORI ,  Manabu SATO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: G02F1/1333 ,  G02F1/1368 ,  H01L29/04 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  G02F1/1343 ,  G02F1/1362

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136277 ,  G02F2001/134372 ,  G02F2202/02 ,  G02F2202/10 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L29/04 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/7869

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract translation: 为了抑制由于来自有机绝缘膜的释放气体导致的晶体管的特性的变化，使得显示装置的可靠性增加。 显示装置包括晶体管，设置在晶体管上方的有机绝缘膜，以减少由于晶体管引起的不均匀性以及有机绝缘膜上的电容器。 有机绝缘膜的整个表面没有被电容器的部件（透明导电层和无机绝缘膜）覆盖，并且来自有机绝缘膜的释放气体可以从上表面的暴露部分释放到外部 的有机绝缘膜。

公开(公告)号：US20130175525A1

公开(公告)日：2013-07-11

申请号：US13780138

申请日：2013-02-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Tomoya FUTAMURA ,  Takahiro KASAHARA

IPC: H01L33/00

CPC classification number: G02F1/136204 ,  H01L27/0248 ,  H01L27/1225 ,  H01L27/124 ,  H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.