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    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权

    公开(公告)号：US20210288210A1

    公开(公告)日：2021-09-16

    申请号：US17333402

    申请日：2021-05-28

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI

    IPC: H01L33/00 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

    Abstract: An object is to provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability and a method for manufacturing the semiconductor device with high mass productivity. A main point is to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer and to foiiii an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer be used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer be used as a source region and a drain region.

    LIQUID CRYSTAL DISPLAY DEVICE
    4.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE 有权

    公开(公告)号：US20210011317A1

    公开(公告)日：2021-01-14

    申请号：US17030602

    申请日：2020-09-24

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Hajime KIMURA ,  Hideki UOCHI

    IPC: G02F1/1368 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1333

    Abstract: It is an object of the present invention to apply a sufficient electrical field to a liquid crystal material in a horizontal electrical field liquid crystal display device typified by an FFS type. In a horizontal electrical field liquid crystal display, an electrical field is applied to a liquid crystal material right above a common electrode and a pixel electrode using plural pairs of electrodes rather than one pair of electrodes. One pair of electrodes includes a comb-shaped common electrode and a comb-shaped pixel electrode. Another pair of electrodes includes a common electrode provided in a pixel portion and the comb-shaped pixel electrode.

    SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME
    5.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME 审中-公开

    公开(公告)号：US20200286554A1

    公开(公告)日：2020-09-10

    申请号：US16878757

    申请日：2020-05-20

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hideki UOCHI ,  Koichiro KAMATA

    IPC: G11C13/00 ,  G11C11/404 ,  H01L29/24 ,  H01L27/115 ,  H01L29/16 ,  H01L29/49

    Abstract: Disclosed is a semiconductor device having a memory cell which comprises a transistor having a control gate and a storage gate. The storage gate comprises an oxide semiconductor and is able to be a conductor and an insulator depending on the potential of the storage gate and the potential of the control gate. Data is written by setting the potential of the control gate to allow the storage gate to be a conductor, supplying a potential of data to be stored to the storage gate, and setting the potential of the control gate to allow the storage gate to be an insulator. Data is read by supplying a potential for reading to a read signal line connected to one of a source and a drain of the transistor and detecting the change in potential of a bit line connected to the other of the source and the drain.

    SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME 有权
    半导体器件及其驱动方法

    公开(公告)号：US20170025172A1

    公开(公告)日：2017-01-26

    申请号：US15284662

    申请日：2016-10-04

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hideki UOCHI ,  Koichiro KAMATA

    IPC: G11C13/00 ,  H01L29/16 ,  H01L29/49 ,  H01L27/115

    CPC classification number: G11C13/0007 ,  G11C11/404 ,  G11C13/003 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0045 ,  G11C2013/0078 ,  G11C2213/53 ,  H01L27/115 ,  H01L29/16 ,  H01L29/24 ,  H01L29/247 ,  H01L29/49

    Abstract: Disclosed is a semiconductor device having a memory cell which comprises a transistor having a control gate and a storage gate. The storage gate comprises an oxide semiconductor and is able to be a conductor and an insulator depending on the potential of the storage gate and the potential of the control gate. Data is written by setting the potential of the control gate to allow the storage gate to be a conductor, supplying a potential of data to be stored to the storage gate, and setting the potential of the control gate to allow the storage gate to be an insulator. Data is read by supplying a potential for reading to a read signal line connected to one of a source and a drain of the transistor and detecting the change in potential of a bit line connected to the other of the source and the drain.

    Abstract translation: 公开了一种具有存储单元的半导体器件，该存储单元包括具有控制栅极和存储栅极的晶体管。 存储栅极包括氧化物半导体，并且能够根据存储栅极的电位和控制栅极的电位而成为导体和绝缘体。 通过设置控制栅极的电位来允许存储门为导体，向存储门提供要存储的数据的电位，以及设置控制门的电位以允许存储门为 绝缘子。 通过向连接到晶体管的源极和漏极中的一个的读取信号线提供读取电位并检测与源极和漏极中的另一个连接的位线的电位变化来读取数据。

    DISPLAY DEVICE
    9.
    发明申请
    DISPLAY DEVICE 审中-公开
    显示设备

    公开(公告)号：US20160190177A1

    公开(公告)日：2016-06-30

    申请号：US15063737

    申请日：2016-03-08

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Rihito WADA ,  Yoko CHIBA

    IPC: H01L27/12 ,  H01L29/786 ,  H01L29/04 ,  H01L29/24

    CPC classification number: H01L27/1225 ,  G02F1/13392 ,  G02F1/13458 ,  G02F2001/13398 ,  G09G2300/0804 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869 ,  H01L51/5221

    Abstract: A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.

    Abstract translation: 显示装置包括其中像素电极层布置在矩阵中的像素部分，并且相应于像素电极设置具有至少两种具有不同量的氧的氧化物半导体层的组合的倒置交错薄膜晶体管 层。 在该显示装置的像素部的周围，设置有通过与像素电极层相同的材料形成的导电层与形成在对置基板上的公共电极层电连接的焊盘部。 通过提供适合于设置在显示面板中的焊盘部分的结构，实现了本发明防止由于各种显示装置中的薄膜分离引起的缺陷的一个反对意见。

    DISPLAY DEVICE
    10.
    发明申请
    DISPLAY DEVICE 审中-公开
    显示设备

    公开(公告)号：US20150362806A1

    公开(公告)日：2015-12-17

    申请号：US14837599

    申请日：2015-08-27

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Tomoya FUTAMURA ,  Takahiro KASAHARA

    IPC: G02F1/1362 ,  H01L27/12

    CPC classification number: G02F1/136204 ,  H01L27/0248 ,  H01L27/1225 ,  H01L27/124 ,  H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.

    Abstract translation: 为了利用包括氧化物半导体的显示装置的特性，需要具有适当结构和占用面积小的保护电路等。 保护电路使用非线性元件形成，该非线性元件包括覆盖栅电极的栅极绝缘膜; 栅绝缘膜上的第一氧化物半导体层; 覆盖与第一氧化物半导体层的沟道形成区重叠的区域的沟道保护层; 以及通过层叠导电层和第二氧化物半导体层并在第一氧化物半导体层上形成的第一布线层和第二布线层。 栅电极连接到扫描线或信号线，第一布线层或第二布线层直接连接到栅电极。

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