公开(公告)号：US11710707B2

公开(公告)日：2023-07-25

申请号：US17205098

申请日：2021-03-18

Applicant: Shibaura Mechatronics Corporation

Inventor： Hisashi Nishigaki ,  Atsushi Fujita ,  Shohei Tanabe ,  Yoshinao Kamo ,  Shigeki Matsunaka

IPC: H05K9/00 ,  H01L23/552 ,  H01F10/26 ,  H01F10/30 ,  H01L23/00

CPC classification number: H01L23/552 ,  H01F10/265 ,  H01F10/30 ,  H01L24/32 ,  H05K9/0088 ,  H01L2224/32225 ,  H01L2924/3025

Abstract: According to one embodiment, an electromagnetic wave attenuator includes a first structure body. The first structure body includes a first member, a second member, and a third member. The first member includes a first magnetic layer and a first nonmagnetic layer alternately provided in a first direction. The first nonmagnetic layer is conductive. The first direction is a stacking direction. The second member includes a second magnetic layer and a second nonmagnetic layer alternately provided in the first direction. The second nonmagnetic layer is conductive. The third member includes a third nonmagnetic layer. The third nonmagnetic layer is conductive. A direction from the third member toward the first member is along the first direction. A direction from the third member toward the second member is along the first direction. A first magnetic layer thickness is greater than a second magnetic layer thickness.

公开(公告)号：US12224250B2

公开(公告)日：2025-02-11

申请号：US18328892

申请日：2023-06-05

Applicant: Shibaura Mechatronics Corporation

Inventor： Hisashi Nishigaki ,  Atsushi Fujita ,  Shohei Tanabe ,  Yoshinao Kamo ,  Shigeki Matsunaka

IPC: H05K9/00 ,  C23C14/34 ,  H01F10/26 ,  H01F10/30 ,  H01L23/00 ,  H01L23/552

Abstract: According to one embodiment, an electromagnetic wave attenuator includes a first structure body. The first structure body includes a first member, a second member, and a third member. The first member includes a first magnetic layer and a first nonmagnetic layer alternately provided in a first direction. The first nonmagnetic layer is conductive. The first direction is a stacking direction. The second member includes a second magnetic layer and a second nonmagnetic layer alternately provided in the first direction. The second nonmagnetic layer is conductive. The third member includes a third nonmagnetic layer. The third nonmagnetic layer is conductive. A direction from the third member toward the first member is along the first direction. A direction from the third member toward the second member is along the first direction. A first magnetic layer thickness is greater than a second magnetic layer thickness.

公开(公告)号：US10244670B2

公开(公告)日：2019-03-26

申请号：US15730361

申请日：2017-10-11

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Akihiko Ito ,  Yoshinao Kamo ,  Shigeki Matsunaka ,  Atsushi Fujita

IPC: H05K9/00 ,  H01L21/56 ,  H01L21/67 ,  H01L23/552 ,  H01L21/683 ,  H01L21/687

Abstract: An electronic component, an electronic component manufacturing apparatus, and an electronic component manufacturing method are provided which enable an electromagnetic wave shielding film formed on a package to achieve an excellent shielding characteristic. An electronic component 10 includes an electromagnetic wave shielding film 13 formed on the top face of a package sealing elements. The thickness of the electromagnetic wave shielding film 13 on the top face of the package 12 is 0.5 to 9 μm, and the relationship between the average height Rc of the roughness curvature factor of the top face of the package 12 and the thickness Te of the electromagnetic wave shielding film 13 is Rc≤2Te.

公开(公告)号：US20170275761A1

公开(公告)日：2017-09-28

申请号：US15467602

申请日：2017-03-23

Applicant: Shibaura Mechatronics Corporation

Inventor： Yoshinao Kamo

IPC: C23C16/50 ,  H01J37/32 ,  C23C16/458

CPC classification number: H01J37/32532 ,  C23C14/0068 ,  C23C14/0078 ,  C23C14/505 ,  C23C14/54 ,  H01J37/32082 ,  H01J37/32513 ,  H01J37/32541 ,  H01J37/32559 ,  H01J37/32651 ,  H01J37/32779 ,  H01J37/32899 ,  H01J37/3417

Abstract: A plasma processing apparatus includes a cylindrical electrode which has a lower end provided with an opening, an upper end that is a closed end, in which a process gas is introduced, and which obtains a plasma process gas upon application of the voltage, and a chamber that is a vacuum container provided with an opening. The cylindrical electrode, which has the upper end attached to the opening of the chamber via an insulation material, is extended in the chamber. The plasma processing apparatus also includes a rotation table carrying a workpiece to be processed by the process gas to a space below the opening of the cylindrical electrode, a shield covering the cylindrical electrode extended inside the chamber via a gap, and a spacer installed in the gap, and formed of an insulation material.