公开(公告)号：US20200340117A1

公开(公告)日：2020-10-29

申请号：US16856650

申请日：2020-04-23

Applicant: Shibaura Mechatronics Corporation

Inventor： Daisuke Ono ,  Akihiko Ito

IPC: C23C16/50 ,  C23C16/452 ,  C23C16/458 ,  C23C16/24 ,  C23C16/40

Abstract: According to one embodiment, film formation apparatus includes: a carrying unit that includes a rotation table which circulates and carries a workpiece; a film formation process unit which includes a target formed of a silicon material, and a plasma producer that produces plasma of a sputter gas introduced between the target and the rotation table, and which forms a silicon film on the workpiece by sputtering; and a hydrogenation process unit which includes a process gas introducing unit that introduces a process gas containing a hydrogen gas, and a plasma producer that produces plasma of the process gas, and which performs hydrogenation on the silicon film formed on the workpiece. The carrying unit carries the workpiece so as to alternately pass through the film formation process unit and through the hydrogenation process unit.

公开(公告)号：US20170369987A1

公开(公告)日：2017-12-28

申请号：US15636414

申请日：2017-06-28

Applicant: Shibaura Mechatronics Corporation

Inventor： Akihiko Ito

IPC: C23C14/34 ,  H01J37/34 ,  H01J37/32 ,  H01L23/552 ,  C23C14/50

CPC classification number: C23C14/3464 ,  C23C14/205 ,  C23C14/352 ,  C23C14/505 ,  H01J37/32715 ,  H01J37/3429 ,  H01L23/552 ,  H01L2224/16227 ,  H01L2924/15311 ,  H01L2924/3025

Abstract: A film forming apparatus includes a chamber that is a container in which a sputter gas is introduced, a carrying unit provided inside the chamber, and circulating and carrying a work-piece on a trajectory of a circular circumference, and a film formation processing unit including a sputter source depositing, on the work-piece circulated and carried by the carrying unit, a film formation material by sputtering to form a film, and a dividing member dividing a film forming position where the film is formed on the work-piece by the sputter source. The dividing member is installed so as to divide the film forming position in a way that, in the trajectory of the circular circumference, a trajectory of passing through a region other than the film forming position performing the film formation is longer than a trajectory of passing through the film forming position performing the film formation.

公开(公告)号：US11505866B2

公开(公告)日：2022-11-22

申请号：US16856650

申请日：2020-04-23

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Daisuke Ono ,  Akihiko Ito

IPC: C23C14/00 ,  C23C14/58 ,  C23C14/56 ,  H01J37/32 ,  H01J37/34 ,  C23C16/50 ,  C23C16/452 ,  C23C16/40 ,  C23C16/24 ,  C23C16/458

Abstract: According to one embodiment, film formation apparatus includes: a carrying unit that includes a rotation table which circulates and carries a workpiece; a film formation process unit which includes a target formed of a silicon material, and a plasma producer that produces plasma of a sputter gas introduced between the target and the rotation table, and which forms a silicon film on the workpiece by sputtering; and a hydrogenation process unit which includes a process gas introducing unit that introduces a process gas containing a hydrogen gas, and a plasma producer that produces plasma of the process gas, and which performs hydrogenation on the silicon film formed on the workpiece. The carrying unit carries the workpiece so as to alternately pass through the film formation process unit and through the hydrogenation process unit.

公开(公告)号：US10244670B2

公开(公告)日：2019-03-26

申请号：US15730361

申请日：2017-10-11

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Akihiko Ito ,  Yoshinao Kamo ,  Shigeki Matsunaka ,  Atsushi Fujita

IPC: H05K9/00 ,  H01L21/56 ,  H01L21/67 ,  H01L23/552 ,  H01L21/683 ,  H01L21/687

Abstract: An electronic component, an electronic component manufacturing apparatus, and an electronic component manufacturing method are provided which enable an electromagnetic wave shielding film formed on a package to achieve an excellent shielding characteristic. An electronic component 10 includes an electromagnetic wave shielding film 13 formed on the top face of a package sealing elements. The thickness of the electromagnetic wave shielding film 13 on the top face of the package 12 is 0.5 to 9 μm, and the relationship between the average height Rc of the roughness curvature factor of the top face of the package 12 and the thickness Te of the electromagnetic wave shielding film 13 is Rc≤2Te.