公开(公告)号：US20170327970A1

公开(公告)日：2017-11-16

申请号：US15531593

申请日：2015-11-27

Applicant: SHOWA DENKO K.K.

Inventor： Daisuke MUTO ,  Jun NORIMATSU

IPC: C30B25/20 ,  H01L21/02 ,  C23C16/32 ,  C30B29/36 ,  C30B25/12 ,  C23C16/458 ,  H01L29/16

CPC classification number: C30B25/20 ,  C23C16/325 ,  C23C16/45504 ,  C23C16/4581 ,  C23C16/4584 ,  C23C16/4585 ,  C30B25/12 ,  C30B25/165 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/68721 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L29/1608

Abstract: Provided is a manufacturing device capable of effectively and sufficiently reducing an edge crown. The wafer support is used in a chemical vapor phase growth device in which an epitaxial film is grown on a main surface of a wafer using a chemical vapor deposition method, the wafer support including: a wafer mounting surface having an upper surface on which a substrate is mounted; and a wafer support portion that rises to surround a wafer to he mounted, in which a height from an apex of the wafer support portion to a main surface of the wafer mounted on the wafer mounting surface is 1 mm or more.

公开(公告)号：US20190127879A1

公开(公告)日：2019-05-02

申请号：US16233390

申请日：2018-12-27

Applicant: SHOWA DENKO K.K.

Inventor： Daisuke MUTO ,  Jun NORIMATSU

IPC: C30B25/20 ,  H01L21/687 ,  C23C16/458 ,  H01L21/02 ,  C23C16/455 ,  C30B25/16 ,  C23C16/32 ,  C30B29/36 ,  C30B25/12 ,  H01L29/16

CPC classification number: C30B25/20 ,  C23C16/325 ,  C23C16/45504 ,  C23C16/4581 ,  C23C16/4584 ,  C23C16/4585 ,  C30B25/12 ,  C30B25/165 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/68721 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L29/1608

Abstract: Provided is a manufacturing device capable of effectively and sufficiently reducing an edge crown. The wafer support is used in a chemical vapor phase growth device in which an epitaxial film is grown on a main surface of a wafer using a chemical vapor deposition method, the wafer support including: a wafer mounting surface having an upper surface on which a substrate is mounted; and a wafer support portion that rises to surround a wafer to be mounted, in which a height from an apex of the wafer support portion to a main surface of the wafer mounted on the wafer mounting surface is 1 mm or more.

公开(公告)号：US20180016706A1

公开(公告)日：2018-01-18

申请号：US15553248

申请日：2016-02-16

Applicant: SHOWA DENKO K.K.

Inventor： Jun NORIMATSU ,  Akira MIYASAKA ,  Yoshiaki KAGESHIMA ,  Koji KAMEI ,  Daisuke MUTO

IPC: C30B29/36 ,  H01L21/205 ,  H01L21/20

CPC classification number: C30B29/36 ,  H01L21/20 ,  H01L21/2003 ,  H01L21/205 ,  H01L21/2053

Abstract: An SiC epitaxial wafer having an SiC epitaxial layer formed on an SiC single crystal substrate having an offset angle of 4 degrees or less in a direction from a (0001) plane. A trapezoidal defect included in the SiC epitaxial wafer includes an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow. Also disclosed is a method for manufacturing the SiC epitaxial wafer.

公开(公告)号：US20160312381A1

公开(公告)日：2016-10-27

申请号：US15102314

申请日：2014-10-30

Applicant: SHOWA DENKO K.K.

Inventor： Jun NORIMATSU ,  Akira MIYASAKA ,  Yoshiaki KAGESHIMA

IPC: C30B25/12 ,  C30B25/14 ,  C30B29/36 ,  H01L21/687 ,  C23C16/455 ,  C23C16/458 ,  H01L21/02 ,  C30B25/20 ,  C23C16/32

CPC classification number: C30B25/12 ,  C23C16/325 ,  C23C16/45508 ,  C23C16/4584 ,  C30B25/14 ,  C30B25/165 ,  C30B25/20 ,  C30B29/36 ,  C30B31/14 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771

Abstract: The SiC epitaxial wafer-producing apparatus according to the invention includes a mounting plate having a concave accommodation portion, a satellite that is provided in the concave accommodation portion and has an upper surface on which a SiC substrate is placed, and a carbon member that is provided in the concave accommodation portion at a position which is lower than the SiC substrate and does not come into contact with the SiC substrate.

Abstract translation: 根据本发明的SiC外延晶片生产设备包括具有凹入容纳部分的安装板，设置在凹入容纳部分中并具有其上放置有SiC衬底的上表面的卫星，以及位于 设置在比SiC基板低的位置并且不与SiC基板接触的凹入容纳部。