公开(公告)号：US20190331603A1

公开(公告)日：2019-10-31

申请号：US16471370

申请日：2017-12-07

Applicant: SHOWA DENKO K.K.

Inventor： Koji KAMEI

IPC: G01N21/64 ,  G01N21/95 ,  G01N21/956 ,  H01L21/02 ,  H01L21/67 ,  C30B25/04 ,  C30B29/36 ,  C30B29/06

Abstract: A SiC wafer defect measuring method which includes a device management step of managing a defect measuring device by irradiating a reference sample made of a material having a light-emitting intensity that does not change with repeated irradiation by excitation light and which has a pattern made of recesses and/or protrusions in the surface, the irradiation by the excitation light being performed before measuring defects in a SiC wafer and under the same irradiation conditions as the measurement of the defects in the SiC wafer, and then measuring the S/N ratio of the pattern from a reflection image of the pattern.

公开(公告)号：US20200284732A1

公开(公告)日：2020-09-10

申请号：US16883866

申请日：2020-05-26

Applicant: SHOWA DENKO K.K.

Inventor： Yoshitaka NISHIHARA ,  Koji KAMEI

IPC: G01N21/88

Abstract: A SiC epitaxial wafer, including: a SiC substrate; and an epitaxial layer stacked on a first surface of the SiC substrate, wherein an area occupied by bar-shaped stacking faults on the first surface of the SiC substrate is identified, and the area occupied by bar-shaped stacking faults on the first surface of the SiC substrate is equal to or less than ¼ of the first surface area of the SiC substrate.

公开(公告)号：US20180016706A1

公开(公告)日：2018-01-18

申请号：US15553248

申请日：2016-02-16

Applicant: SHOWA DENKO K.K.

Inventor： Jun NORIMATSU ,  Akira MIYASAKA ,  Yoshiaki KAGESHIMA ,  Koji KAMEI ,  Daisuke MUTO

IPC: C30B29/36 ,  H01L21/205 ,  H01L21/20

CPC classification number: C30B29/36 ,  H01L21/20 ,  H01L21/2003 ,  H01L21/205 ,  H01L21/2053

Abstract: An SiC epitaxial wafer having an SiC epitaxial layer formed on an SiC single crystal substrate having an offset angle of 4 degrees or less in a direction from a (0001) plane. A trapezoidal defect included in the SiC epitaxial wafer includes an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow. Also disclosed is a method for manufacturing the SiC epitaxial wafer.

公开(公告)号：US20230268177A1

公开(公告)日：2023-08-24

申请号：US18309111

申请日：2023-04-28

Applicant: SHOWA DENKO K.K.

Inventor： Koji KAMEI

IPC: H01L21/02 ,  C23C16/32 ,  C30B25/20 ,  C30B29/36 ,  H01L29/04 ,  H01L29/16 ,  H01L29/34 ,  C01B32/956

CPC classification number: H01L21/02529 ,  C23C16/325 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02428 ,  H01L21/02634 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/34 ,  C01B32/956 ,  C01B32/90

Abstract: According to the present invention, there is provided a SiC epitaxial wafer including: a 4H-SiC single crystal substrate which has a surface with an off angle with respect to a c-plane as a main surface and a bevel part on a peripheral part; and a SiC epitaxial layer having a film thickness of 20 μm or more, which is formed on the 4H-SiC single crystal substrate, in which a density of an interface dislocation extending from an outer peripheral edge of the SiC epitaxial layer is 10 lines/cm or less.

公开(公告)号：US20190172758A1

公开(公告)日：2019-06-06

申请号：US16207396

申请日：2018-12-03

Applicant: SHOWA DENKO K.K.

Inventor： Yoshitaka NISHIHARA ,  Koji KAMEI

IPC: H01L21/66 ,  H01L21/02

Abstract: An evaluation method of a SiC epitaxial wafer includes: a first observation step of preparing a SiC epitaxial wafer having a high-concentration epitaxial layer having an impurity concentration of 1×1018 cm−3 or more, irradiating a surface of the high-concentration epitaxial layer having an impurity concentration of 1×1018 cm−3 or more with excitation light, and observing a surface irradiated with the excitation light via a band-pass filter having a wavelength band of 430 nm or less.

公开(公告)号：US20220259764A1

公开(公告)日：2022-08-18

申请号：US17683176

申请日：2022-02-28

Applicant: SHOWA DENKO K.K.

Inventor： Ling GUO ,  Koji KAMEI

IPC: C30B29/36 ,  C23C16/32 ,  C30B25/20 ,  G01N21/95 ,  G06T7/00 ,  H01L21/02 ,  H01L21/66 ,  H01L29/16 ,  H01L29/32

Abstract: A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H—SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 6.0 inclusions/cm2, wherein a total density of large pit defects and triangular defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.01 defects/cm2 or more and 0.6 defects/cm2 or less. The large pit defect is a pit located on a surface at a position corresponding to a position of the carbon inclusion on the substrate surface, and a conversion rate from the substrate carbon inclusions to the large pit defects and the triangular defects caused by the substrate carbon inclusions is 20% or less. Also disclosed is a method for producing the SiC epitaxial wafer.

公开(公告)号：US20200116649A1

公开(公告)日：2020-04-16

申请号：US16598486

申请日：2019-10-10

Applicant: SHOWA DENKO K.K.

Inventor： Yoshitaka NISHIHARA ,  Koji KAMEI

IPC: G01N21/88

Abstract: In a SiC substrate evaluation method, a bar-shaped stacking fault is observed by irradiating a surface of a SiC substrate before stacking an epitaxial layer with excitation light and extracting light having a wavelength range from equal to or greater than 405 nm and equal to or less than 445 nm among photoluminescence light beams emitted from the first surface.

公开(公告)号：US20190187068A1

公开(公告)日：2019-06-20

申请号：US16327445

申请日：2017-08-21

Applicant: SHOWA DENKO K.K.

Inventor： Ling GUO ,  Koji KAMEI

IPC: G01N21/95 ,  C30B29/36 ,  C30B25/20 ,  C23C16/32

CPC classification number: G01N21/9501 ,  C23C16/325 ,  C30B25/20 ,  C30B29/36

Abstract: A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H—SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 6.0 inclusions/cm2, and wherein a density of large pit defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.5 defects/cm2 or less.

公开(公告)号：US20190177876A1

公开(公告)日：2019-06-13

申请号：US16325281

申请日：2017-08-21

Applicant: SHOWA DENKO K.K.

Inventor： Ling GUO ,  Koji KAMEI

IPC: C30B29/36 ,  C30B25/20 ,  C23C16/32 ,  G01N21/95 ,  G06T7/00 ,  H01L29/16 ,  H01L29/32 ,  H01L21/02 ,  H01L21/66

Abstract: A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H-SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 2.5 inclusions/cm2, wherein a total density of large pit defects and triangular defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.6 defects/cm2 or less.