公开(公告)号：US09013042B2

公开(公告)日：2015-04-21

申请号：US13677861

申请日：2012-11-15

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Chang-Fu Lin ,  Ho-Yi Tsai ,  Chin-Tsai Yao ,  Jui-Chung Ho ,  Ching-Hui Hung

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/532 ,  H01L23/00

CPC classification number: H01L23/53204 ,  H01L24/00 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05541 ,  H01L2224/05572 ,  H01L2224/05584 ,  H01L2224/05616 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11849 ,  H01L2224/13111 ,  H01L2224/16503 ,  H01L2924/3512 ,  H01L2924/35121 ,  H01L2924/3651 ,  H01L2924/00014 ,  H01L2924/206 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01029

Abstract: An interconnection structure for being formed on bonding pads of a substrate in a semiconductor package is provided. The interconnection structure includes a nickel layer formed on each of the bonding pads, a metal layer formed on the nickel layer, and a solder material formed on the metal layer. The metal layer is made of one of gold, silver, lead and copper, and has a thickness in the range of 0.5 to 5 um. As such, when the solder material is reflowed to form solder bumps, no nickel-tin compound is formed between the solder bumps and the metal layer, thereby avoiding cracking or delamination of the solder bumps.

Abstract translation: 提供了用于形成在半导体封装中的衬底的焊盘上的互连结构。 互连结构包括形成在每个接合焊盘上的镍层，形成在镍层上的金属层和形成在金属层上的焊料材料。 金属层由金，银，铅和铜之一制成，厚度为0.5〜5μm。 因此，当焊料材料回流以形成焊料凸块时，在焊料凸块和金属层之间不形成镍锡化合物，从而避免焊料凸块的开裂或分层。

公开(公告)号：US20140061928A1

公开(公告)日：2014-03-06

申请号：US13677861

申请日：2012-11-15

Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.

Inventor： Chang-Fu Lin ,  Ho-Yi Tsai ,  Chin-Tsai Yao ,  Jui-Chung Ho ,  Ching-Hui Hung

IPC: H01L23/532

CPC classification number: H01L23/53204 ,  H01L24/00 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05541 ,  H01L2224/05572 ,  H01L2224/05584 ,  H01L2224/05616 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11849 ,  H01L2224/13111 ,  H01L2224/16503 ,  H01L2924/3512 ,  H01L2924/35121 ,  H01L2924/3651 ,  H01L2924/00014 ,  H01L2924/206 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01029

Abstract: An interconnection structure for being formed on bonding pads of a substrate in a semiconductor package is provided. The interconnection structure includes a nickel layer formed on each of the bonding pads, a metal layer formed on the nickel layer, and a solder material formed on the metal layer. The metal layer is made of one of gold, silver, lead and copper, and has a thickness in the range of 0.5 to 5 um. As such, when the solder material is reflowed to form solder bumps, no nickel-tin compound is formed between the solder bumps and the metal layer, thereby avoiding cracking or delamination of the solder bumps.

Abstract translation: 提供了用于形成在半导体封装中的衬底的焊盘上的互连结构。 互连结构包括形成在每个接合焊盘上的镍层，形成在镍层上的金属层和形成在金属层上的焊料材料。 金属层由金，银，铅和铜之一制成，厚度为0.5〜5μm。 因此，当焊料材料回流以形成焊料凸块时，在焊料凸块和金属层之间不形成镍锡化合物，从而避免焊料凸块的开裂或分层。