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公开(公告)号：US12116520B2
公开(公告)日：2024-10-15
申请号：US17346641
申请日：2021-06-14
申请人： SK Innovation Co., Ltd. , SK Inc.
发明人： Cheol Woo Kim , Min Kyung Seon , Yu Na Shim , Jae Hoon Kwak , Young Bom Kim , Jong Ho Lee , Jin Kyung Jo
IPC分类号： C09K13/06 , C07F7/18 , H01L21/4757 , H01L21/311
CPC分类号： C09K13/06 , C07F7/1804 , H01L21/47573 , H01L21/31111
摘要： An etching composition contains phosphoric acid, phosphoric anhydride, a compound represented by the following Formula 1, and a silane compound comprising at least one silicon (Si) atom, excluding the compound represented by Formula 1:
wherein, in Formula 1, A is an n-valent radical, where n is an integer of 1 to 6, L is a direct bond or hydrocarbylene, Y is selected from NR1, O, PR2 and S, where R1 to R2 are independently hydrogen, halogen, a substituted or unsubstituted hydrocarbyl group, or non-hydrocarbyl group, X and Z are independently selected from N, O, P and S, and Ra to Rc are independently an unshared electron pair, hydrogen, or a substituted or unsubstituted hydrocarbyl group.-
公开(公告)号：US11066601B2
公开(公告)日：2021-07-20
申请号：US16886944
申请日：2020-05-29
发明人： Cheol Woo Kim , Min Kyung Seon , Yu Na Shim , Jae Hoon Kwak , Young Bom Kim , Jong Ho Lee , Jin Kyung Jo
IPC分类号： C09K13/06 , C07F7/18 , H01L21/4757
摘要： An etching composition contains phosphoric acid, phosphoric anhydride, a compound represented by the following Formula 1, and a silane compound comprising at least one silicon (Si) atom, excluding the compound represented by Formula 1: wherein, in Formula 1, A is an n-valent radical, where n is an integer of 1 to 6, L is a direct bond or hydrocarbylene, Y is selected from NR1, O, PR2 and S, where R1 to R2 are independently hydrogen, halogen, a substituted or unsubstituted hydrocarbyl group, or non-hydrocarbyl group, X and Z are independently selected from N, O, P and S, and Ra to Rc are independently an unshared electron pair, hydrogen, or a substituted or unsubstituted hydrocarbyl group.
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公开(公告)号：US11236116B2
公开(公告)日：2022-02-01
申请号：US16839122
申请日：2020-04-03
发明人： Cheol Woo Kim , Min Kyung Seon , Yu Na Shim , Jae Hoon Kwak , Young Bom Kim , Jong Ho Lee , Jin Kyung Jo
IPC分类号： C07F7/18
摘要： The present disclosure relates to a silicon compound represented by Formula 1 below: wherein R1 to R6 are each independently selected from a hydrogen, a hydrocarbyl group and a non-hydrocarbyl group, L is a direct bond or hydrocarbylene, X is oxygen (O) or sulfur (S), Y and Z are each independently selected from NR7, O, and S, where R7 is a hydrogen, a hydrocarbyl group, or a non-hydrocarbyl group, and Y and Z are not simultaneously NR7, and A is an n-valent radical, where n is an integer of 1 to 6.
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公开(公告)号：US10781371B2
公开(公告)日：2020-09-22
申请号：US16421903
申请日：2019-05-24
发明人： Cheol Woo Kim , Je Ho Lee , Jin Su Ham , Jae Hoon Kwak , Jong Ho Lee
IPC分类号： H01L21/3213 , H01L21/311 , H01L21/306 , H01L21/04 , C23F1/16 , C23F1/14 , C23F1/00 , C09K13/06 , C07F9/6596 , C07F9/6561 , C07F9/53 , C07F9/50 , C07F9/28 , C07F7/18 , C07F7/08
摘要： An etchant composition includes phosphoric acid and a silane compound represented by the following Chemical Formula 1: wherein A is an n-valent radical, L is C1-C5 hydrocarbylene, R1 to R3 are independently hydrogen, hydroxy, hydrocarbyl, or alkoxy, in which R1 to R3 exist respectively or are connected to each other by a heteroelement, and n is an integer of 2 to 5.
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5.发明申请公开(公告)号：US20200377793A1
公开(公告)日：2020-12-03
申请号：US16886944
申请日：2020-05-29
发明人： Cheol Woo Kim , Min Kyung Seon , Yu Na Shim , Jae Hoon Kwak , Young Bom Kim , Jong Ho Lee , Jin Kyung Jo
IPC分类号： C09K13/06 , H01L21/4757 , C07F7/18
摘要： An etching composition contains phosphoric acid, phosphoric anhydride, a compound represented by the following Formula 1, and a silane compound comprising at least one silicon (Si) atom, excluding the compound represented by Formula 1: wherein, in Formula 1, A is an n-valent radical, where n is an integer of 1 to 6, L is a direct bond or hydrocarbylene, Y is selected from NR1, O, PR2 and S, where R1 to R2 are independently hydrogen, halogen, a substituted or unsubstituted hydrocarbyl group, or non-hydrocarbyl group, X and Z are independently selected from N, O, P and S, and Ra to Rc are independently an unshared electron pair, hydrogen, or a substituted or unsubstituted hydrocarbyl group.
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公开(公告)号：US10941341B2
公开(公告)日：2021-03-09
申请号：US16594387
申请日：2019-10-07
发明人： Cheol Woo Kim , Yu Na Shim , Je Ho Lee , Jae Hoon Kwak , Young Bom Kim , Jin Kyung Jo
IPC分类号： C09K13/04 , C09K13/06 , H01L21/321 , C23F1/16 , H01L21/311 , C09K13/00
摘要： An etching composition providing a high selection ratio enabling selective removal of a nitride film and minimization of an etching rate, a preparation method thereof, an etching composition additive prepared through a reaction of phosphoric anhydride and a silane compound represented by Formula 1 below, a method for preparing the same and an etching composition including the same are provided:
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公开(公告)号：US11186772B2
公开(公告)日：2021-11-30
申请号：US17009852
申请日：2020-09-02
发明人： Cheol Woo Kim , Kwang Kuk Lee , Jae Hoon Kwak , Young Bom Kim , Jung Ha Shin , Jong Ho Lee , Jin Kyung Jo
IPC分类号： C09K13/06 , H01L21/3105 , C23F3/06 , C09G1/04 , C09G1/06 , C09K8/52 , C09K3/14 , C09G1/00 , H01L21/311 , H01L21/306
摘要： An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an ammonium salt represented by Formula 1 below: wherein: L1 to L3 are independently substituted or unsubstituted hydrocarbylene, R1 to R4 are independently hydrogen, a substituted or unsubstituted hydrocarbyl group, and Xn− is an n-valent anion, where n is an integer of 1 to 3.
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公开(公告)号：US11028321B2
公开(公告)日：2021-06-08
申请号：US16594491
申请日：2019-10-07
发明人： Cheol Woo Kim , Yu Na Shim , Kwang Kuk Lee , Jae Hoon Kwak , Young Bom Kim , Jong Ho Lee , Jin Kyung Jo
IPC分类号： C09K13/06 , H01L21/311 , C23F1/10
摘要： An etching composition is provided. The etching composition includes phosphoric acid, phosphoric anhydride, a silane compound represented by Formula 1 below and water: wherein R1 to R6 are independently hydrogen, halogen, a substituted or unsubstituted C1-C20 hydrocarbyl group, a C1-C20 alkoxy group, a carboxy group, a carbonyl group, a nitro group, a tri(C1-C20-alkyl)silyl group, a phosphoryl group, or a cyano group. L is a direct bond or C1 to C3 hydrocarbylene, and A is an n-valent radical, while n is an integer of 1 to 4.
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公开(公告)号：US20190359886A1
公开(公告)日：2019-11-28
申请号：US16421903
申请日：2019-05-24
发明人： Cheol Woo Kim , Je Ho Lee , Jin Su Ham , Jae Hoon Kwak , Jong Ho Lee
摘要： An etchant composition includes phosphoric acid and a silane compound represented by the following Chemical Formula 1: wherein A is an n-valent radical, L is C1-C5 hydrocarbylene, R1 to R3 are independently hydrogen, hydroxy, hydrocarbyl, or alkoxy, in which R1 to R3 exist respectively or are connected to each other by a heteroelement, and n is an integer of 2 to 5.
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