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Patent Agency Ranking
1.再颁专利公开(公告)号：USRE47711E1
公开(公告)日：2019-11-05
申请号：US14882893
申请日：2015-10-14
Applicant: SORAA, INC.
Inventor： James W. Raring , Eric M. Hall , Mark P. D'Evelyn
Abstract: A packaged optical device includes a substrate having a surface region with light emitting diode devices fabricated on a semipolar or nonpolar GaN substrate. The LEDs emit polarized light and are characterized by an overlapped electron wave function and a hole wave function. Phosphors within the package are excited by the polarized light and, in response, emit electromagnetic radiation of a second wavelength.
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2.发明授权White light devices using non-polar or semipolar gallium containing materials and phosphors 有权使用非极性或半极性含镓材料和荧光体的白光器件公开(公告)号：US08956894B2
公开(公告)日：2015-02-17
申请号：US14035693
申请日：2013-09-24
Applicant: Soraa, Inc.
Inventor： James W. Raring , Eric M. Hall , Mark P. D'Evelyn
CPC classification number: H01L33/502 , H01L33/16 , H01L33/32 , H01L33/54 , H01L33/58 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/92247 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01025 , H01L2924/01037 , H01L2924/01057 , H01L2924/01063 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
Abstract: A packaged optical device includes a substrate having a surface region with light emitting diode devices fabricated on a semipolar or nonpolar GaN substrate. The light emitting diodes emit polarized light and are characterized by an overlapped electron wave function and a hole wave function. Phosphors within the package are excited by the polarized light and, in response, emit electromagnetic radiation of a second wavelength.
Abstract translation: 封装的光学器件包括具有在半极性或非极性GaN衬底上制造的发光二极管器件的表面区域的衬底。 发光二极管发射偏振光，其特征在于重叠的电子波函数和空穴波函数。 封装内的荧光体被偏振光激发，并且响应地发射第二波长的电磁辐射。
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公开(公告)号：USRE47241E1
公开(公告)日：2019-02-12
申请号：US14979027
申请日：2015-12-22
Applicant: Soraa, Inc.
Inventor： Mark P. D'Evelyn , Rajat Sharma , Eric M. Hall , Daniel F. Feezell
Abstract: A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength.
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4.发明授权Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors 有权使用非极性或半极性含镓材料和透明荧光体的极化白光装置公开(公告)号：US08618560B2
公开(公告)日：2013-12-31
申请号：US13623788
申请日：2012-09-20
Applicant: Soraa, Inc.
Inventor： Mark P. D'Evelyn , Rajat Sharma , Eric M. Hall , Daniel F. Feezell
CPC classification number: H01L33/50 , H01L33/16 , H01L33/32 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/505 , H01L33/507 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
Abstract: A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength.
Abstract translation: 发光器件包括具有覆盖表面区域的表面区域和发光二极管的衬底。 发光二极管制造在含有半极性或非极性GaN的衬底上并且发射第一波长的电磁辐射。 二极管包括以电子波函数和空穴波函数为特征的量子阱区域。 电子波函数和空穴波函数在量子阱区域的预定空间区域内基本上重叠。 该器件具有覆盖发光二极管的透明磷光体。 磷光体被基本上极化的发射激发以发射第二波长的电磁辐射。
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5.发明申请Polarized White Light Devices Using Non-Polar or Semipolar Gallium Containing Materials and Transparent Phosphors 有权使用非极性或半极性含镓材料和透明荧光粉的极化白光器件公开(公告)号：US20130270516A1
公开(公告)日：2013-10-17
申请号：US13623788
申请日：2012-09-20
Applicant: Soraa, Inc.
Inventor： Mark P. D'Evelyn , Rajat Sharma , Eric M. Hall , Daniel F. Feezell
CPC classification number: H01L33/50 , H01L33/16 , H01L33/32 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/505 , H01L33/507 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
Abstract: A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength.
Abstract translation: 发光器件包括具有覆盖表面区域的表面区域和发光二极管的衬底。 发光二极管制造在含有半极性或非极性GaN的衬底上并且发射第一波长的电磁辐射。 二极管包括以电子波函数和空穴波函数为特征的量子阱区域。 电子波函数和空穴波函数在量子阱区域的预定空间区域内基本上重叠。 该器件具有覆盖发光二极管的透明磷光体。 磷光体被基本上极化的发射激发以发射第二波长的电磁辐射。
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