-
公开(公告)号：US20140346944A1
公开(公告)日：2014-11-27
申请号：US14368783
申请日：2012-12-20
发明人： Yasuyuki Kawakami , Takahiro Matsumoto , Takao Saito , Kei Emoto
摘要： A light source device comprising a filament showing high electric power-to-visible light conversion efficiency is provided. The light source device of the present invention comprises a translucent gastight container, a filament disposed in the translucent gastight container, and a lead wire for supplying an electric current to the filament. The filament comprises a substrate formed from a metal material and a visible light-absorbing film covering the substrate. The visible light-absorbing film is transparent to lights of infrared region. The reflectance of the substrate for visible lights is thereby made low, and the reflectance of the substrate for infrared lights is thereby made high. Therefore, radiation of infrared lights is suppressed, and visible luminous efficiency can be enhanced.
摘要翻译： 提供了一种包括显示高电力 - 可见光转换效率的灯丝的光源装置。 本发明的光源装置包括半透明气密容器，设置在半透明气密容器中的灯丝和用于向灯丝供电的引线。 灯丝包括由金属材料形成的基板和覆盖基板的可见光吸收膜。 可见光吸收膜对于红外区域的光是透明的。 由此，可见光用基板的反射率变低，因此红外线用基板的反射率变高。 因此，抑制红外线的照射，可以提高可见光的发光效率。
-
公开(公告)号：US12113333B2
公开(公告)日：2024-10-08
申请号：US17272385
申请日：2019-08-29
发明人： Susumu Noda , Yoshinori Tanaka , Menaka De Zoysa , Kenji Ishizaki , Tomoaki Koizumi , Kei Emoto
IPC分类号： H01S5/00 , H01S5/11 , H01S5/183 , H01S5/185 , H01S5/343 , C30B25/18 , C30B29/40 , H01S5/042 , H01S5/20
CPC分类号： H01S5/11 , H01S5/183 , H01S5/185 , H01S5/34333 , C30B25/18 , C30B29/403 , H01S5/04254 , H01S5/2009 , H01S2304/04
摘要： A surface emitting laser element formed of a group III nitride semiconductor, comprising: a first clad layer of a first conductivity type; a first guide layer of the first conductivity type having a photonic crystal layer formed on the first clad layer including voids disposed having two-dimensional periodicity in a surface parallel to the layer and a first embedding layer formed on the photonic crystal layer; a second embedding layer formed on the first embedding layer by crystal growth; an active layer formed on the second embedding layer; a second guide layer formed on the active layer; and a second clad layer of a second conductivity type formed on the second guide layer, the second conductivity type being a conductivity type opposite to the first conductivity type. The first embedding layer has a surface including pits disposed at surface positions corresponding to the voids.
-
公开(公告)号：US11539187B2
公开(公告)日：2022-12-27
申请号：US16956512
申请日：2018-12-17
发明人： Susumu Noda , Yoshinori Tanaka , Menaka De Zoysa , Tomoaki Koizumi , Kei Emoto
摘要： A surface emission laser formed of a group III nitride semiconductor includes a first conductivity type first clad layer; a first conductivity type first guide layer on the first clad layer; a light-emitting layer on the first guide layer; a second guide layer on the light-emitting layer; and a second conductivity type second clad layer on the second guide layer. The first or second guide layer internally includes voids periodically arranged at square lattice positions with two axes perpendicular to one another as arrangement directions in a surface parallel to the guide layer. The voids have a polygonal prism structure or an oval columnar structure with a long axis and a short axis perpendicular to the long axis in the parallel surface, and the long axis is inclined with respect to one axis among the arrangement directions of the voids.
-
公开(公告)号：US11837850B2
公开(公告)日：2023-12-05
申请号：US17123126
申请日：2020-12-16
发明人： Susumu Noda , Tomoaki Koizumi , Kei Emoto
CPC分类号： H01S5/18 , H01S5/0206 , H01S5/11 , H01S5/2081 , H01S5/34333 , H01S2304/04
摘要： A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: (a) growing a first cladding layer with a {0001} growth plane; (b) growing a guide layer on the first cladding layer; (c) forming holes in a surface of the guide layer by etching, the holes being two-dimensionally periodically arranged within a plane parallel to the guide layer; (d) etching the guide layer by using an etchant having selectivity to the {0001} plane and a {10−10} plane of the guide layer; (e) supplying a gas containing a nitrogen source to cause mass transport without supplying a group-III material gas, and then supplying the group-III material gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and (f) growing an active layer and a second cladding layer in this order on the first embedding layer.
-
公开(公告)号：US11670910B2
公开(公告)日：2023-06-06
申请号：US17123133
申请日：2020-12-16
发明人： Susumu Noda , Tomoaki Koizumi , Kei Emoto
CPC分类号： H01S5/2009 , H01S5/04253 , H01S5/04254 , H01S5/11 , H01S5/185 , H01S5/2086 , H01S5/2095 , H01S5/320225 , H01S5/320275 , H01S5/34333 , H01S2301/176 , H01S2304/04
摘要： A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: (a) growing a first cladding layer with a {0001} growth plane; (b) growing a guide layer on the first cladding layer; (c) forming holes which are two-dimensionally periodically arranged within the guide layer; (d) etching the guide layer by ICP-RIE using a chlorine-based gas and an argon; (e) supplying a gas containing a nitrogen to cause mass-transport, and then supplying the group-III gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and (f) growing an active layer and a second cladding layer on the first embedding layer, The step (d) includes a step of referring to already-obtained data on a relationship of an attraction voltage and a ratio of gases in the ICP-RIE with a diameter distribution of air holes embedded, and applying the attraction voltage and the ratio to the ICP-RIE.
-
公开(公告)号：US12057678B2
公开(公告)日：2024-08-06
申请号：US18137462
申请日：2023-04-21
发明人： Susumu Noda , Tomoaki Koizumi , Kei Emoto
CPC分类号： H01S5/2009 , H01S5/04253 , H01S5/04254 , H01S5/11 , H01S5/185 , H01S5/2086 , H01S5/2095 , H01S5/320225 , H01S5/320275 , H01S5/34333 , H01S2301/176 , H01S2304/04
摘要： A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: growing a first cladding layer with a {0001} growth plane; growing a guide layer on the first cladding layer; forming holes which are two-dimensionally periodically arranged within the guide layer; etching the guide layer by ICP-RIE using a chlorine-based gas and an argon; supplying a gas containing a nitrogen to cause mass-transport, and then supplying the group-III gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and growing an active layer and a second cladding layer on the first embedding layer, The step includes a step of referring to already-obtained data on a relationship of an attraction voltage and a ratio of gases in the ICP-RIE with a diameter distribution of air holes embedded, and applying the attraction voltage and the ratio to the ICP-RIE.
-
公开(公告)号：US11283243B2
公开(公告)日：2022-03-22
申请号：US16488595
申请日：2018-02-27
发明人： Susumu Noda , Yoshinori Tanaka , Menaka De Zoysa , Junichi Sonoda , Tomoaki Koizumi , Kei Emoto
摘要： A method for manufacturing a surface emitting laser made of a group-III nitride semiconductor by an MOVPE method includes: (a) growing a first cladding layer of a first conductive type on a substrate; (b) growing a first optical guide layer of the first conductive type on the first cladding layer; (c) forming holes having a two-dimensional periodicity in a plane parallel to the first optical guide layer, in the first optical guide layer by etching; (d) supplying a gas containing a group-III material and a nitrogen source and performing growth to form recessed portions having a facet of a predetermined plane direction above openings of the holes, thereby closing the openings of the holes; and (e) planarizing the recessed portions by mass transport, after the openings of the holes have been closed, wherein after the planarizing at least one side surface of the holes is a {10-10} facet.
-
公开(公告)号：US09214330B2
公开(公告)日：2015-12-15
申请号：US14368783
申请日：2012-12-20
发明人： Yasuyuki Kawakami , Takahiro Matsumoto , Takao Saito , Kei Emoto
摘要： A light source device comprising a filament showing high electric power-to-visible light conversion efficiency is provided. The light source device of the present invention comprises a translucent gastight container, a filament disposed in the translucent gastight container, and a lead wire for supplying an electric current to the filament. The filament comprises a substrate formed from a metal material and a visible light-absorbing film covering the substrate. The visible light-absorbing film is transparent to lights of infrared region. The reflectance of the substrate for visible lights is thereby made low, and the reflectance of the substrate for infrared lights is thereby made high. Therefore, radiation of infrared lights is suppressed, and visible luminous efficiency can be enhanced.
摘要翻译： 提供了一种包括显示高电力 - 可见光转换效率的灯丝的光源装置。 本发明的光源装置包括半透明气密容器，设置在半透明气密容器中的灯丝和用于向灯丝供电的引线。 灯丝包括由金属材料形成的基板和覆盖基板的可见光吸收膜。 可见光吸收膜对于红外区域的光是透明的。 由此，可见光用基板的反射率变低，因此红外线用基板的反射率变高。 因此，抑制红外线的照射，可以提高可见光的发光效率。
-
-
-
-
-
-
-
搜索结果
8 条记录 (耗时 0.015 秒)
