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公开(公告)号：US20170302057A1
公开(公告)日：2017-10-19
申请号：US15488539
申请日：2017-04-17
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Komei TAZAWA , Ji-Hao LIANG , Seiichiro KOBAYASHI
CPC classification number: H01S5/18308 , H01S5/0425 , H01S5/18341 , H01S5/18361 , H01S5/18369 , H01S5/187 , H01S5/32341 , H01S5/34333 , H01S5/423 , H01S2301/166
Abstract: A vertical cavity light-emitting element includes: a first-conductivity-type semiconductor layer; an active layer; a second-conductivity-type semiconductor layer that are formed in this order on a first reflector; an insulating current confinement layer formed on the second-conductivity-type semiconductor layer; a through opening formed in the current confinement layer; a transparent electrode covering the through opening and the current confinement layer and being in contact with the second-conductivity-type semiconductor layer via the through opening; and a second reflector formed on the transparent electrode. At least one of a portion of the transparent electrode corresponding to the opening and a portion of the second-conductivity-type semiconductor layer corresponding to the opening that are in contact with each other in the through opening includes a first resistive region disposed along an inner circumference of the through opening and a second resistive region disposed on a center region of the through opening.
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公开(公告)号：US20220368107A1
公开(公告)日：2022-11-17
申请号：US17624159
申请日：2020-06-17
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Komei TAZAWA , Seiichiro KOBAYASHI , Yusuke YOKOBAYASHI
Abstract: A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror, a first semiconductor layer having a first conductivity type, a light-emitting layer, a second semiconductor layer having a second conductivity type opposite of the first conductivity type, and having an upper surface with a projection, an insulating layer that covers the upper surface of the second semiconductor layer and has an opening that exposes the second semiconductor layer on the upper surface of the projection terminated on the upper surface of the projection of the second semiconductor layer, a transmissive electrode layer that covers the upper surface of the second semiconductor layer exposed from the opening of the insulating layer and is formed on the insulating layer, and a second multilayer film reflecting mirror formed on the transmissive electrode layer and constituting a resonator together with the first multilayer film reflecting mirror.
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公开(公告)号：US20220149595A1
公开(公告)日：2022-05-12
申请号：US17432466
申请日：2020-01-20
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Masaru KURAMOTO , Seiichiro KOBAYASHI
IPC: H01S5/183
Abstract: A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror, a light-emitting structure layer with a light-emitting layer, and a second multilayer film reflecting mirror. The second multilayer film reflecting mirror constitutes a resonator between the first and second multilayer film reflecting mirrors. The second multilayer film reflecting mirror includes a first multilayer film, an intermediate film, and a second multilayer film. The first and second multilayer films have low refractive index films and high refractive index films that are alternately stacked. The intermediate film covers an upper surface of the first multilayer film and film has a translucency to a light emitted from the light-emitting layer. The second multilayer film partially covers an upper surface of the intermediate film. The intermediate film has a film thickness based on ½ of a wavelength inside the intermediate film of light emitted from the light-emitting layer.
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公开(公告)号：US20170149213A1
公开(公告)日：2017-05-25
申请号：US15347267
申请日：2016-11-09
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Komei TAZAWA , Ji-Hao LIANG , Seiichiro KOBAYASHI , Masaru TAKIZAWA , Keisuke NAKATA
CPC classification number: H01S5/18361 , H01S5/0014 , H01S5/0021 , H01S5/0425 , H01S5/18308 , H01S5/18333 , H01S5/18341 , H01S5/18369 , H01S5/34333
Abstract: A vertical cavity light emitting device includes: a first multilayer film reflector; a semiconductor structure layer that is formed on the first multilayer film reflector and includes a semiconductor layer of a first conductivity type, an active layer, and a semiconductor layer of a second conductivity type opposite to the first conductivity type; an insulating current confinement layer formed on the semiconductor layer of the second conductivity type; a through opening formed in the current confinement layer; a transparent electrode for covering the through opening and the current confinement layer, the transparent electrode being in contact with the semiconductor layer of the second conductivity type through the through opening; a second multilayer film reflector formed on the transparent electrode; and a mixed composition layer formed to be in contact with an edge of the through opening and in which the current confinement layer and the transparent electrode are mixed.
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Patent Agency Ranking
公开(公告)号：US20220140570A1
公开(公告)日：2022-05-05
申请号：US17432470
申请日：2020-02-05
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Masaru KURAMOTO , Seiichiro KOBAYASHI
Abstract: A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror formed on the substrate, a light-emitting structure layer formed on the first multilayer film reflecting mirror, the light-emitting structure layer including a light-emitting layer; and a second multilayer film reflecting mirror formed on the light-emitting structure layer, the second multilayer film reflecting mirror constituting a resonator between the first multilayer film reflecting mirror and the second multilayer film reflecting mirror. The light-emitting structure layer has a high resistance region and a low resistance region having an electrical resistance lower than an electrical resistance of the high resistance region. The low resistance region has a plurality of partial regions arranged into a ring shape while being separated by the high resistance region in a plane of the light-emitting structure layer.
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公开(公告)号：US20210384706A1
公开(公告)日：2021-12-09
申请号：US17285635
申请日：2019-10-07
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Masaru KURAMOTO , Seiichiro KOBAYASHI
Abstract: A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror on the substrate, a first semiconductor layer on the first multilayer film reflecting mirror, a light-emitting layer on the first semiconductor layer, and a second semiconductor layer on the light-emitting layer. The second semiconductor layer includes a low resistance region and a high resistance region on an upper surface. The high resistance region is depressed from the low resistance region toward the light-emitting layer outside the low resistance region and impurities of the second conductivity type are inactivated in the high resistance region such that the high resistance region has an electrical resistance higher than an electrical resistance of the low resistance region. A light-transmitting electrode layer is in contact with the low resistance region and the high resistance region, and a second multilayer film reflecting mirror is on the light-transmitting electrode layer.
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公开(公告)号：US20250158360A1
公开(公告)日：2025-05-15
申请号：US19006794
申请日：2024-12-31
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Masaru KURAMOTO , Seiichiro KOBAYASHI
Abstract: A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror on the substrate, a first semiconductor layer on the first multilayer film reflecting mirror, a light-emitting layer on the first semiconductor layer, and a second semiconductor layer on the light-emitting layer. An upper surface of the second semiconductor layer includes a low resistance region functioning as a current injected region and a high resistance region functioning as a non-current injection region. The high resistance region surrounds the low resistance region and has an electrical resistance higher than an electrical resistance of the low resistance region. A light-transmitting electrode layer covers both the low resistance region and the high resistance region, and a second multilayer film reflecting mirror is on the light-transmitting electrode layer.
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公开(公告)号：US20180226771A1
公开(公告)日：2018-08-09
申请号：US15886113
申请日：2018-02-01
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Komei TAZAWA , Ji-Hao LIANG , Seiichiro KOBAYASHI
CPC classification number: H01S5/2205 , H01L33/105 , H01S5/0425 , H01S5/183 , H01S5/18311 , H01S5/18333 , H01S5/18341 , H01S5/18352 , H01S5/18369 , H01S5/2013 , H01S5/3407 , H01S5/34333 , H01S5/34346
Abstract: A vertical-cavity light-emitting element includes: a first reflector; a semiconductor structure layer including a first semiconductor layer, an active layer, a second semiconductor layer, and a third semiconductor layer that are sequentially provided on the first reflector; a transparent electrode on the third semiconductor layer; and a second reflector on the transparent electrode and interposes the structure layer with the first reflector. The third semiconductor layer has a mesa structure to protrude on the second semiconductor layer and be covered by the transparent electrode. The light emitting element further includes a current confining layer including: an insulating film provided in the second semiconductor layer to surround the mesa structure and be in contact with the transparent electrode, the insulating film being an oxide of the second semiconductor layer; and an insulating layer on the insulating film to surround the mesa structure and define a through opening.
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公开(公告)号：US20180115140A1
公开(公告)日：2018-04-26
申请号：US15789919
申请日：2017-10-20
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Komei TAZAWA , Ji-Hao LIANG , Seiichiro KOBAYASHI
CPC classification number: H01S5/18377 , H01L21/02639 , H01L33/105 , H01L33/20 , H01S5/0206 , H01S5/0207 , H01S5/1231 , H01S5/125 , H01S5/183
Abstract: A vertical cavity light-emitting device includes: a semiconductor substrate having a hexagonal crystal structure; a line mask extending linearly along at least one of a [11-20] direction and directions equivalent to the [11-20] direction on a c-plane of the semiconductor substrate; a first reflector provided on an exposed region exposed from the line mask on the c-plane of the semiconductor substrate, the first reflector comprising a high refractive index semiconductor film and a low refractive index semiconductor film having a refractive index smaller than that of the high refractive index semiconductor film, the high refractive index semiconductor film and the low refractive index semiconductor film being alternately layered; a light-emitting structure layer provided on the first reflector; and a second reflector disposed on the light-emitting structure layer so as to be opposed so the first reflector.
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