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公开(公告)号：US20170331258A1
公开(公告)日：2017-11-16
申请号：US15593183
申请日：2017-05-11
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Komei TAZAWA , Ji-Hao LIANG
CPC classification number: H01S5/423 , F21Y2105/10 , F21Y2115/30 , H01S5/005 , H01S5/0224 , H01S5/028 , H01S5/0425 , H01S5/18305 , H01S5/18308 , H01S5/18341 , H01S5/18361 , H01S5/18369 , H01S5/18394 , H01S5/34333
Abstract: Provided is a surface emitting laser device including a plurality of surface emitting laser elements and capable of significantly reducing the crosstalk of light and the formation of a dark line. The surface emitting laser device includes: a mounting substrate; a surface emitting laser array including a plurality of surface emitting laser elements arranged side by side on the mounting substrate; a plurality of light absorption layers formed on the plurality of surface emitting laser elements, respectively, and each including an opening; and a plurality of wavelength conversion plates formed on the plurality of light absorption layers, respectively, and each including a fluorescent plate and a light reflection film covering a side surface of the fluorescent plate.
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公开(公告)号：US20170302057A1
公开(公告)日：2017-10-19
申请号：US15488539
申请日：2017-04-17
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Komei TAZAWA , Ji-Hao LIANG , Seiichiro KOBAYASHI
CPC classification number: H01S5/18308 , H01S5/0425 , H01S5/18341 , H01S5/18361 , H01S5/18369 , H01S5/187 , H01S5/32341 , H01S5/34333 , H01S5/423 , H01S2301/166
Abstract: A vertical cavity light-emitting element includes: a first-conductivity-type semiconductor layer; an active layer; a second-conductivity-type semiconductor layer that are formed in this order on a first reflector; an insulating current confinement layer formed on the second-conductivity-type semiconductor layer; a through opening formed in the current confinement layer; a transparent electrode covering the through opening and the current confinement layer and being in contact with the second-conductivity-type semiconductor layer via the through opening; and a second reflector formed on the transparent electrode. At least one of a portion of the transparent electrode corresponding to the opening and a portion of the second-conductivity-type semiconductor layer corresponding to the opening that are in contact with each other in the through opening includes a first resistive region disposed along an inner circumference of the through opening and a second resistive region disposed on a center region of the through opening.
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公开(公告)号：US20220368107A1
公开(公告)日：2022-11-17
申请号：US17624159
申请日：2020-06-17
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Komei TAZAWA , Seiichiro KOBAYASHI , Yusuke YOKOBAYASHI
Abstract: A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror, a first semiconductor layer having a first conductivity type, a light-emitting layer, a second semiconductor layer having a second conductivity type opposite of the first conductivity type, and having an upper surface with a projection, an insulating layer that covers the upper surface of the second semiconductor layer and has an opening that exposes the second semiconductor layer on the upper surface of the projection terminated on the upper surface of the projection of the second semiconductor layer, a transmissive electrode layer that covers the upper surface of the second semiconductor layer exposed from the opening of the insulating layer and is formed on the insulating layer, and a second multilayer film reflecting mirror formed on the transmissive electrode layer and constituting a resonator together with the first multilayer film reflecting mirror.
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Patent Agency Ranking
公开(公告)号：US20170149213A1
公开(公告)日：2017-05-25
申请号：US15347267
申请日：2016-11-09
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Komei TAZAWA , Ji-Hao LIANG , Seiichiro KOBAYASHI , Masaru TAKIZAWA , Keisuke NAKATA
CPC classification number: H01S5/18361 , H01S5/0014 , H01S5/0021 , H01S5/0425 , H01S5/18308 , H01S5/18333 , H01S5/18341 , H01S5/18369 , H01S5/34333
Abstract: A vertical cavity light emitting device includes: a first multilayer film reflector; a semiconductor structure layer that is formed on the first multilayer film reflector and includes a semiconductor layer of a first conductivity type, an active layer, and a semiconductor layer of a second conductivity type opposite to the first conductivity type; an insulating current confinement layer formed on the semiconductor layer of the second conductivity type; a through opening formed in the current confinement layer; a transparent electrode for covering the through opening and the current confinement layer, the transparent electrode being in contact with the semiconductor layer of the second conductivity type through the through opening; a second multilayer film reflector formed on the transparent electrode; and a mixed composition layer formed to be in contact with an edge of the through opening and in which the current confinement layer and the transparent electrode are mixed.
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公开(公告)号：US20170110851A1
公开(公告)日：2017-04-20
申请号：US15294409
申请日：2016-10-14
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Komei TAZAWA , Ji-Hao LIANG
CPC classification number: H01S5/2203 , H01S5/0202 , H01S5/028 , H01S5/0425 , H01S5/16 , H01S5/2031 , H01S5/22 , H01S5/24 , H01S5/32341
Abstract: A semiconductor light-emitting element includes a multilayer body including a first end surface and a second end surface which are opposed to each other, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are stacked; a pair of recesses that are formed on the second semiconductor layer, separated from the second end surface, and separated from each other in the direction parallel to the first and second end surfaces; a ridge portion that is a protrusion between the pair of recesses and extends along the direction perpendicular to the first and second end surfaces; a band-shaped electrode disposed on the ridge portion; and a light guide layer formed on the second semiconductor layer between the ridge portion and the second end surface and guides light from the light emitting layer.
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公开(公告)号：US20180226771A1
公开(公告)日：2018-08-09
申请号：US15886113
申请日：2018-02-01
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Komei TAZAWA , Ji-Hao LIANG , Seiichiro KOBAYASHI
CPC classification number: H01S5/2205 , H01L33/105 , H01S5/0425 , H01S5/183 , H01S5/18311 , H01S5/18333 , H01S5/18341 , H01S5/18352 , H01S5/18369 , H01S5/2013 , H01S5/3407 , H01S5/34333 , H01S5/34346
Abstract: A vertical-cavity light-emitting element includes: a first reflector; a semiconductor structure layer including a first semiconductor layer, an active layer, a second semiconductor layer, and a third semiconductor layer that are sequentially provided on the first reflector; a transparent electrode on the third semiconductor layer; and a second reflector on the transparent electrode and interposes the structure layer with the first reflector. The third semiconductor layer has a mesa structure to protrude on the second semiconductor layer and be covered by the transparent electrode. The light emitting element further includes a current confining layer including: an insulating film provided in the second semiconductor layer to surround the mesa structure and be in contact with the transparent electrode, the insulating film being an oxide of the second semiconductor layer; and an insulating layer on the insulating film to surround the mesa structure and define a through opening.
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公开(公告)号：US20180115140A1
公开(公告)日：2018-04-26
申请号：US15789919
申请日：2017-10-20
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Komei TAZAWA , Ji-Hao LIANG , Seiichiro KOBAYASHI
CPC classification number: H01S5/18377 , H01L21/02639 , H01L33/105 , H01L33/20 , H01S5/0206 , H01S5/0207 , H01S5/1231 , H01S5/125 , H01S5/183
Abstract: A vertical cavity light-emitting device includes: a semiconductor substrate having a hexagonal crystal structure; a line mask extending linearly along at least one of a [11-20] direction and directions equivalent to the [11-20] direction on a c-plane of the semiconductor substrate; a first reflector provided on an exposed region exposed from the line mask on the c-plane of the semiconductor substrate, the first reflector comprising a high refractive index semiconductor film and a low refractive index semiconductor film having a refractive index smaller than that of the high refractive index semiconductor film, the high refractive index semiconductor film and the low refractive index semiconductor film being alternately layered; a light-emitting structure layer provided on the first reflector; and a second reflector disposed on the light-emitting structure layer so as to be opposed so the first reflector.
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公开(公告)号：US20170125978A1
公开(公告)日：2017-05-04
申请号：US15331384
申请日：2016-10-21
Applicant: STANLEY ELECTRIC CO., LTD.
Inventor： Komei TAZAWA , Ji-Hao LIANG
CPC classification number: H01S5/183 , H01S5/005 , H01S5/02476 , H01S5/026 , H01S5/0425 , H01S5/18308 , H01S5/18341 , H01S5/18369 , H01S5/18394 , H01S5/187 , H01S5/34333 , H01S5/423
Abstract: A surface emitting laser element includes: a semiconductor structure layer interposed between a first multi-layer reflector and a second multi-layer reflector; an insulating current confinement layer that is formed on a semiconductor layer of a second conductivity type and includes a first through-hole with a transparent electrode; the second multi-layer reflector formed on the current confinement layer and the transparent electrode; a heat conducting layer that is formed on the second multi-layer reflector and includes a second through-hole disposed coaxially with the first through-hole in the current confinement layer and having a minimum opening diameter smaller than an opening diameter of the first through-hole; and an emission color converting portion that is formed above the second through-hole in the heat conducting layer and includes phosphor.
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