公开(公告)号：US09330994B2

公开(公告)日：2016-05-03

申请号：US14228531

申请日：2014-03-28

Applicant: STATS ChipPAC, Ltd.

Inventor： Zigmund R. Camacho ,  Bartholomew Liao ,  Sheila Marie L. Alvarez ,  HeeJo Chi ,  Kelvin Dao

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/31 ,  H01L21/56 ,  H01L21/768 ,  H01L23/00 ,  H01L23/498 ,  H01L21/48 ,  H01L23/538

CPC classification number: H01L23/3107 ,  H01L21/4846 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76895 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13023 ,  H01L2224/73267 ,  H01L2224/94 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/00 ,  H01L2224/03

Abstract: A semiconductor device has a semiconductor die and encapsulant deposited over the semiconductor die. An insulating layer is formed over the semiconductor die and encapsulant. A first channel including a first conductive surface is formed in the insulating layer by laser radiation. A laser-activated catalyst is infused in the insulating layer to form the first conductive surface in the first channel upon laser radiation. A vertical interconnect is formed through the encapsulant. A first conductive layer is formed in the first channel over the first conductive surface. A second channel including a second conductive surface is formed in the encapsulant by laser radiation. The catalyst is infused in the encapsulant to form the second conductive surface in the second channel upon laser radiation. A second conductive layer is formed in the second channel over the second conductive surface. An interconnect structure is formed over the first conductive layer.

Abstract translation: 半导体器件具有沉积在半导体管芯上的半导体管芯和密封剂。 在半导体管芯和密封剂上形成绝缘层。 通过激光辐射在绝缘层中形成包括第一导电表面的第一通道。 在绝缘层中注入激光激活的催化剂，以在激光辐射时在第一通道中形成第一导电表面。 通过密封剂形成垂直互连。 第一导电层在第一通道上形成在第一导电表面上。 通过激光辐射在密封剂中形成包括第二导电表面的第二通道。 催化剂注入到密封剂中以在激光辐射下在第二通道中形成第二导电表面。 第二导电层在第二通道上形成在第二导电表面上。 在第一导电层上形成互连结构。

公开(公告)号：US20150279778A1

公开(公告)日：2015-10-01

申请号：US14228531

申请日：2014-03-28

Applicant: STATS ChipPAC, Ltd.

Inventor： Zigmund R. Camacho ,  Bartholomew Liao ,  Sheila Marie L. Alvarez ,  HeeJo Chi ,  Kelvin Dao

IPC: H01L23/528 ,  H01L23/31 ,  H01L23/00 ,  H01L21/56 ,  H01L21/768

CPC classification number: H01L23/3107 ,  H01L21/4846 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76895 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13023 ,  H01L2224/73267 ,  H01L2224/94 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/00 ,  H01L2224/03

Abstract: A semiconductor device has a semiconductor die and encapsulant deposited over the semiconductor die. An insulating layer is formed over the semiconductor die and encapsulant. A first channel including a first conductive surface is formed in the insulating layer by laser radiation. A laser-activated catalyst is infused in the insulating layer to form the first conductive surface in the first channel upon laser radiation. A vertical interconnect is formed through the encapsulant. A first conductive layer is formed in the first channel over the first conductive surface. A second channel including a second conductive surface is formed in the encapsulant by laser radiation. The catalyst is infused in the encapsulant to form the second conductive surface in the second channel upon laser radiation. A second conductive layer is formed in the second channel over the second conductive surface. An interconnect structure is formed over the first conductive layer.

Abstract translation: 半导体器件具有沉积在半导体管芯上的半导体管芯和密封剂。 在半导体管芯和密封剂上形成绝缘层。 通过激光辐射在绝缘层中形成包括第一导电表面的第一通道。 在绝缘层中注入激光激活的催化剂，以在激光辐射时在第一通道中形成第一导电表面。 通过密封剂形成垂直互连。 第一导电层在第一通道上形成在第一导电表面上。 通过激光辐射在密封剂中形成包括第二导电表面的第二通道。 催化剂注入到密封剂中以在激光辐射下在第二通道中形成第二导电表面。 第二导电层在第二通道上形成在第二导电表面上。 在第一导电层上形成互连结构。