公开(公告)号：US09330994B2

公开(公告)日：2016-05-03

申请号：US14228531

申请日：2014-03-28

Applicant: STATS ChipPAC, Ltd.

Inventor： Zigmund R. Camacho ,  Bartholomew Liao ,  Sheila Marie L. Alvarez ,  HeeJo Chi ,  Kelvin Dao

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/31 ,  H01L21/56 ,  H01L21/768 ,  H01L23/00 ,  H01L23/498 ,  H01L21/48 ,  H01L23/538

CPC classification number: H01L23/3107 ,  H01L21/4846 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76895 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13023 ,  H01L2224/73267 ,  H01L2224/94 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/00 ,  H01L2224/03

Abstract: A semiconductor device has a semiconductor die and encapsulant deposited over the semiconductor die. An insulating layer is formed over the semiconductor die and encapsulant. A first channel including a first conductive surface is formed in the insulating layer by laser radiation. A laser-activated catalyst is infused in the insulating layer to form the first conductive surface in the first channel upon laser radiation. A vertical interconnect is formed through the encapsulant. A first conductive layer is formed in the first channel over the first conductive surface. A second channel including a second conductive surface is formed in the encapsulant by laser radiation. The catalyst is infused in the encapsulant to form the second conductive surface in the second channel upon laser radiation. A second conductive layer is formed in the second channel over the second conductive surface. An interconnect structure is formed over the first conductive layer.

Abstract translation: 半导体器件具有沉积在半导体管芯上的半导体管芯和密封剂。 在半导体管芯和密封剂上形成绝缘层。 通过激光辐射在绝缘层中形成包括第一导电表面的第一通道。 在绝缘层中注入激光激活的催化剂，以在激光辐射时在第一通道中形成第一导电表面。 通过密封剂形成垂直互连。 第一导电层在第一通道上形成在第一导电表面上。 通过激光辐射在密封剂中形成包括第二导电表面的第二通道。 催化剂注入到密封剂中以在激光辐射下在第二通道中形成第二导电表面。 第二导电层在第二通道上形成在第二导电表面上。 在第一导电层上形成互连结构。

公开(公告)号：US20140252641A1

公开(公告)日：2014-09-11

申请号：US14187014

申请日：2014-02-21

Applicant: STATS ChipPAC, Ltd.

Inventor： See Chian Lim ,  Teck Tiong Tan ,  Yung Kuan Hsiao ,  Ching Meng Fang ,  Yoke Hor Phua ,  Bartholomew Liao

IPC: H01L23/52 ,  H01L23/00 ,  H01L21/768

CPC classification number: H01L23/3128 ,  H01L21/56 ,  H01L21/568 ,  H01L21/768 ,  H01L23/145 ,  H01L23/15 ,  H01L23/295 ,  H01L23/3135 ,  H01L23/49822 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/11 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/96 ,  H01L2924/01322 ,  H01L2924/12 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/19 ,  H01L2224/11

Abstract: A semiconductor device has a plurality of semiconductor die. A first prefabricated insulating film is disposed over the semiconductor die. A conductive layer is formed over the first prefabricated insulating film. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The first prefabricated insulating film is laminated over the semiconductor die. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The semiconductor die is embedded within the first prefabricated insulating film with the first prefabricated insulating film covering first and side surfaces of the semiconductor die. The interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A portion of the first prefabricated insulating film is removed after disposing the first prefabricated insulating film over the semiconductor die. A second prefabricated insulating film is disposed over the first prefabricated insulating film.

Abstract translation: 半导体器件具有多个半导体管芯。 第一预制绝缘膜设置在半导体管芯上。 在第一预制绝缘膜上形成导电层。 在半导体管芯和第一预制绝缘膜上形成互连结构。 将第一预制绝缘膜层叠在半导体管芯上。 第一预制绝缘膜包括玻璃布，玻璃纤维或玻璃填料。 半导体管芯被嵌入第一预制绝缘膜中，其中第一预制绝缘膜覆盖半导体管芯的第一和第二表面。 互连结构形成在与第一表面相对的半导体管芯的第二表面上。 在将第一预制绝缘膜设置在半导体管芯上之后，去除第一预制绝缘膜的一部分。 第二预制绝缘膜设置在第一预制绝缘膜上。

公开(公告)号：US09627338B2

公开(公告)日：2017-04-18

申请号：US14187014

申请日：2014-02-21

Applicant: STATS ChipPAC, Ltd.

Inventor： See Chian Lim ,  Teck Tiong Tan ,  Yung Kuan Hsiao ,  Ching Meng Fang ,  Yoke Hor Phua ,  Bartholomew Liao

IPC: H01L21/56 ,  H01L23/00 ,  H01L23/14 ,  H01L23/498 ,  H01L23/538 ,  H01L23/29 ,  H01L23/31

CPC classification number: H01L23/3128 ,  H01L21/56 ,  H01L21/568 ,  H01L21/768 ,  H01L23/145 ,  H01L23/15 ,  H01L23/295 ,  H01L23/3135 ,  H01L23/49822 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/11 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/96 ,  H01L2924/01322 ,  H01L2924/12 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/19 ,  H01L2224/11

Abstract: A semiconductor device has a plurality of semiconductor die. A first prefabricated insulating film is disposed over the semiconductor die. A conductive layer is formed over the first prefabricated insulating film. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The first prefabricated insulating film is laminated over the semiconductor die. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The semiconductor die is embedded within the first prefabricated insulating film with the first prefabricated insulating film covering first and side surfaces of the semiconductor die. The interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A portion of the first prefabricated insulating film is removed after disposing the first prefabricated insulating film over the semiconductor die. A second prefabricated insulating film is disposed over the first prefabricated insulating film.

公开(公告)号：US20150279778A1

公开(公告)日：2015-10-01

申请号：US14228531

申请日：2014-03-28

Applicant: STATS ChipPAC, Ltd.

Inventor： Zigmund R. Camacho ,  Bartholomew Liao ,  Sheila Marie L. Alvarez ,  HeeJo Chi ,  Kelvin Dao

IPC: H01L23/528 ,  H01L23/31 ,  H01L23/00 ,  H01L21/56 ,  H01L21/768

CPC classification number: H01L23/3107 ,  H01L21/4846 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76895 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13023 ,  H01L2224/73267 ,  H01L2224/94 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/00 ,  H01L2224/03

Abstract: A semiconductor device has a semiconductor die and encapsulant deposited over the semiconductor die. An insulating layer is formed over the semiconductor die and encapsulant. A first channel including a first conductive surface is formed in the insulating layer by laser radiation. A laser-activated catalyst is infused in the insulating layer to form the first conductive surface in the first channel upon laser radiation. A vertical interconnect is formed through the encapsulant. A first conductive layer is formed in the first channel over the first conductive surface. A second channel including a second conductive surface is formed in the encapsulant by laser radiation. The catalyst is infused in the encapsulant to form the second conductive surface in the second channel upon laser radiation. A second conductive layer is formed in the second channel over the second conductive surface. An interconnect structure is formed over the first conductive layer.

Abstract translation: 半导体器件具有沉积在半导体管芯上的半导体管芯和密封剂。 在半导体管芯和密封剂上形成绝缘层。 通过激光辐射在绝缘层中形成包括第一导电表面的第一通道。 在绝缘层中注入激光激活的催化剂，以在激光辐射时在第一通道中形成第一导电表面。 通过密封剂形成垂直互连。 第一导电层在第一通道上形成在第一导电表面上。 通过激光辐射在密封剂中形成包括第二导电表面的第二通道。 催化剂注入到密封剂中以在激光辐射下在第二通道中形成第二导电表面。 第二导电层在第二通道上形成在第二导电表面上。 在第一导电层上形成互连结构。