公开(公告)号：US20190109048A1

公开(公告)日：2019-04-11

申请号：US16204737

申请日：2018-11-29

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Thomas J. Strothmann ,  Damien M. Pricolo ,  Il Kwon Shim ,  Yaojian Lin ,  Heinz-Peter Wirtz ,  Seung Wook Yoon ,  Pandi C. Marimuthu

IPC: H01L21/78 ,  H01L23/522 ,  H01L23/28 ,  H01L23/498 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L21/683

Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.

公开(公告)号：US10181423B2

公开(公告)日：2019-01-15

申请号：US15414469

申请日：2017-01-24

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Thomas J. Strothmann ,  Damien M. Pricolo ,  Il Kwon Shim ,  Yaojian Lin ,  Heinz-Peter Wirtz ,  Seung Wook Yoon ,  Pandi C. Marimuthu

IPC: H01L21/78 ,  H01L23/28 ,  H01L23/522 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L23/498 ,  H01L21/683

Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.

公开(公告)号：US11961764B2

公开(公告)日：2024-04-16

申请号：US17231591

申请日：2021-04-15

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Thomas J. Strothmann ,  Damien M. Pricolo ,  Il Kwon Shim ,  Yaojian Lin ,  Heinz-Peter Wirtz ,  Seung Wook Yoon ,  Pandi C. Marimuthu

IPC: H01L23/28 ,  H01L21/56 ,  H01L21/683 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/522

CPC classification number: H01L21/78 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/28 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/522 ,  H01L24/12 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L24/73 ,  H01L2221/68327 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/11 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/951 ,  H01L2224/97 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15174 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/97 ,  H01L2224/81 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2224/97 ,  H01L2224/83 ,  H01L2224/97 ,  H01L2224/85 ,  H01L2924/15311 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/97 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2924/1306 ,  H01L2924/00 ,  H01L2924/01322 ,  H01L2924/00 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00

Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.

公开(公告)号：US11011423B2

公开(公告)日：2021-05-18

申请号：US16204737

申请日：2018-11-29

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Thomas J. Strothmann ,  Damien M. Pricolo ,  Il Kwon Shim ,  Yaojian Lin ,  Heinz-Peter Wirtz ,  Seung Wook Yoon ,  Pandi C. Marimuthu

IPC: H01L23/522 ,  H01L21/78 ,  H01L23/28 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L23/498 ,  H01L21/683

Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.

公开(公告)号：US20210233815A1

公开(公告)日：2021-07-29

申请号：US17231591

申请日：2021-04-15

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Thomas J. Strothmann ,  Damien M. Pricolo ,  Il Kwon Shim ,  Yaojian Lin ,  Heinz-Peter Wirtz ,  Seung Wook Yoon ,  Pandi C. Marimuthu

IPC: H01L21/78 ,  H01L23/28 ,  H01L23/522 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L23/498 ,  H01L21/683

Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.

公开(公告)号：US20170133270A1

公开(公告)日：2017-05-11

申请号：US15414469

申请日：2017-01-24

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Thomas J. Strothmann ,  Damien M. Pricolo ,  Il Kwon Shim ,  Yaojian Lin ,  Heinz-Peter Wirtz ,  Seung Wook Yoon ,  Pandi C. Marimuthu

IPC: H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L21/56 ,  H01L21/683

CPC classification number: H01L21/78 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/28 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/522 ,  H01L24/12 ,  H01L24/19 ,  H01L24/73 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/68327 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/951 ,  H01L2224/97 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00

Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.