公开(公告)号：US12094729B2

公开(公告)日：2024-09-17

申请号：US17457719

申请日：2021-12-06

申请人： STATS ChipPAC Pte. Ltd.

发明人： Yaojian Lin ,  Heinz-Peter Wirtz ,  Seung Wook Yoon ,  Pandi C. Marimuthu

IPC分类号： H01L23/28 ,  H01L21/3105 ,  H01L21/56 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L21/565 ,  H01L21/31058 ,  H01L21/56 ,  H01L21/561 ,  H01L21/563 ,  H01L21/78 ,  H01L23/28 ,  H01L23/3114 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3142 ,  H01L24/11 ,  H01L24/81 ,  H01L24/96 ,  H01L24/97 ,  H01L21/568 ,  H01L2224/0508 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05172 ,  H01L2224/05184 ,  H01L2224/1134 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/01322 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/10335 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/97 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2924/1306 ,  H01L2924/00 ,  H01L2924/01322 ,  H01L2924/00 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2224/1134 ,  H01L2924/00014 ,  H01L2924/00011 ,  H01L2224/81805

摘要： A semiconductor device has a semiconductor wafer including a plurality of semiconductor die. An insulating layer is formed over the semiconductor wafer. A portion of the insulating layer is removed by LDA to expose a portion of an active surface of the semiconductor die. A first conductive layer is formed over a contact pad on the active surface of the semiconductor die. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is disposed over a carrier with the active surface of the semiconductor die offset from the carrier. An encapsulant is deposited over the semiconductor die and carrier to cover a side of the semiconductor die and the exposed portion of the active surface. An interconnect structure is formed over the first conductive layer. Alternatively, a MUF material is deposited over a side of the semiconductor die and the exposed portion of the active surface.

公开(公告)号：US11961764B2

公开(公告)日：2024-04-16

申请号：US17231591

申请日：2021-04-15

申请人： STATS ChipPAC Pte. Ltd.

发明人： Thomas J. Strothmann ,  Damien M. Pricolo ,  Il Kwon Shim ,  Yaojian Lin ,  Heinz-Peter Wirtz ,  Seung Wook Yoon ,  Pandi C. Marimuthu

IPC分类号： H01L23/28 ,  H01L21/56 ,  H01L21/683 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/522

CPC分类号： H01L21/78 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/28 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/522 ,  H01L24/12 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L24/73 ,  H01L2221/68327 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/11 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/951 ,  H01L2224/97 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15174 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/97 ,  H01L2224/81 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2224/97 ,  H01L2224/83 ,  H01L2224/97 ,  H01L2224/85 ,  H01L2924/15311 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/97 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2924/1306 ,  H01L2924/00 ,  H01L2924/01322 ,  H01L2924/00 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00

摘要： A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.

公开(公告)号：US11011423B2

公开(公告)日：2021-05-18

申请号：US16204737

申请日：2018-11-29

申请人： STATS ChipPAC Pte. Ltd.

发明人： Thomas J. Strothmann ,  Damien M. Pricolo ,  Il Kwon Shim ,  Yaojian Lin ,  Heinz-Peter Wirtz ,  Seung Wook Yoon ,  Pandi C. Marimuthu

IPC分类号： H01L23/522 ,  H01L21/78 ,  H01L23/28 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L23/498 ,  H01L21/683

摘要： A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.

公开(公告)号：US10446459B2

公开(公告)日：2019-10-15

申请号：US15618343

申请日：2017-06-09

申请人： STATS ChipPAC Pte. Ltd.

发明人： Thomas J. Strothmann ,  Seung Wook Yoon ,  Yaojian Lin

IPC分类号： H01L23/31 ,  H01L23/00 ,  H01L21/56

摘要： A semiconductor device has a semiconductor die and an encapsulant around the semiconductor die. A fan-in interconnect structure is formed over the semiconductor die while leaving the encapsulant devoid of the interconnect structure. The fan-in interconnect structure includes an insulating layer and a conductive layer formed over the semiconductor die. The conductive layer remains within a footprint of the semiconductor die. A portion of encapsulant is removed from over the semiconductor die. A backside protection layer is formed over a non-active surface of the semiconductor die after depositing the encapsulant. The backside protection layer is formed by screen printing or lamination. The backside protection layer includes an opaque, transparent, or translucent material. The backside protection layer is marked for alignment using a laser. A reconstituted panel including the semiconductor die is singulated through the encapsulant to leave encapsulant disposed over a sidewall of the semiconductor die.

公开(公告)号：US10181423B2

公开(公告)日：2019-01-15

申请号：US15414469

申请日：2017-01-24

申请人： STATS ChipPAC Pte. Ltd.

发明人： Thomas J. Strothmann ,  Damien M. Pricolo ,  Il Kwon Shim ,  Yaojian Lin ,  Heinz-Peter Wirtz ,  Seung Wook Yoon ,  Pandi C. Marimuthu

IPC分类号： H01L21/78 ,  H01L23/28 ,  H01L23/522 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L23/498 ,  H01L21/683

摘要： A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.

公开(公告)号：US10903304B2

公开(公告)日：2021-01-26

申请号：US15460690

申请日：2017-03-16

申请人： STATS ChipPAC Pte. Ltd.

发明人： Meenakshi Padmanathan ,  Seung Wook Yoon ,  YongTaek Lee

IPC分类号： H01L23/522 ,  H01L23/528 ,  H01L23/538 ,  H01L49/02 ,  H01L23/532 ,  H01L23/66

摘要： A semiconductor device has a trench formed in a substrate. The trench has tapered sidewalls and depth of 10-120 micrometers. A first insulating layer is conformally applied over the substrate and into the trench. An insulating material, such as polymer, is deposited over the first insulating layer in the trench. A first conductive layer is formed over the insulating material. A second insulating layer is formed over the first insulating layer and first conductive layer. A second conductive layer is formed over the second insulating layer and electrically contacts the first conductive layer. The first and second conductive layers are isolated from the substrate by the insulating material in the trench. A third insulating layer is formed over the second insulating layer and second conductive layer. The first and second conductive layers are coiled over the substrate to exhibit inductive properties.

公开(公告)号：US20200090954A1

公开(公告)日：2020-03-19

申请号：US16687865

申请日：2019-11-19

申请人： STATS ChipPAC Pte. Ltd.

发明人： Yaojian Lin ,  Heinz-Peter Wirtz ,  Seung Wook Yoon ,  Pandi C. Marimuthu

IPC分类号： H01L21/56 ,  H01L23/28 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L21/3105

摘要： A semiconductor device has a semiconductor wafer including a plurality of semiconductor die. An insulating layer is formed over the semiconductor wafer. A portion of the insulating layer is removed by LDA to expose a portion of an active surface of the semiconductor die. A first conductive layer is formed over a contact pad on the active surface of the semiconductor die. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is disposed over a carrier with the active surface of the semiconductor die offset from the carrier. An encapsulant is deposited over the semiconductor die and carrier to cover a side of the semiconductor die and the exposed portion of the active surface. An interconnect structure is formed over the first conductive layer. Alternatively, a MUF material is deposited over a side of the semiconductor die and the exposed portion of the active surface.

公开(公告)号：US10475779B2

公开(公告)日：2019-11-12

申请号：US15676488

申请日：2017-08-14

申请人： STATS ChipPAC Pte. Ltd.

发明人： Yaojian Lin ,  Kang Chen ,  Seung Wook Yoon

IPC分类号： H01L25/00 ,  H01L21/768 ,  H01L23/522 ,  H01L23/31 ,  H01L23/498 ,  H01L21/56 ,  H01L23/538 ,  H01L23/552 ,  H01L21/683 ,  H01L23/00 ,  H01L25/065 ,  H01L25/10

摘要： A semiconductor device has an encapsulant deposited over a first surface of the semiconductor die and around the semiconductor die. A first insulating layer is formed over a second surface of the semiconductor die opposite the first surface. A conductive layer is formed over the first insulating layer. An interconnect structure is formed through the encapsulant outside a footprint of the semiconductor die and electrically connected to the conductive layer. The first insulating layer includes an optically transparent or translucent material. The semiconductor die includes a sensor configured to receive an external stimulus passing through the first insulating layer. A second insulating layer is formed over the first surface of the semiconductor die. A conductive via is formed through the first insulating layer outside a footprint of the semiconductor die. A plurality of stacked semiconductor devices is electrically connected through the interconnect structure.

公开(公告)号：US20190109048A1

公开(公告)日：2019-04-11

申请号：US16204737

申请日：2018-11-29

申请人： STATS ChipPAC Pte. Ltd.

发明人： Thomas J. Strothmann ,  Damien M. Pricolo ,  Il Kwon Shim ,  Yaojian Lin ,  Heinz-Peter Wirtz ,  Seung Wook Yoon ,  Pandi C. Marimuthu

IPC分类号： H01L21/78 ,  H01L23/522 ,  H01L23/28 ,  H01L23/498 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L21/683

摘要： A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.

公开(公告)号：US20170186690A1

公开(公告)日：2017-06-29

申请号：US15460690

申请日：2017-03-16

申请人： STATS ChipPAC Pte. Ltd.

发明人： Meenakshi Padmanathan ,  Seung Wook Yoon ,  YongTaek Lee

IPC分类号： H01L23/522 ,  H01L23/532 ,  H01L49/02 ,  H01L23/528

CPC分类号： H01L28/10 ,  H01L23/5226 ,  H01L23/5227 ,  H01L23/528 ,  H01L23/5329 ,  H01L23/66 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19015 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device has a trench formed in a substrate. The trench has tapered sidewalls and depth of 10-120 micrometers. A first insulating layer is conformally applied over the substrate and into the trench. An insulating material, such as polymer, is deposited over the first insulating layer in the trench. A first conductive layer is formed over the insulating material. A second insulating layer is formed over the first insulating layer and first conductive layer. A second conductive layer is formed over the second insulating layer and electrically contacts the first conductive layer. The first and second conductive layers are isolated from the substrate by the insulating material in the trench. A third insulating layer is formed over the second insulating layer and second conductive layer. The first and second conductive layers are coiled over the substrate to exhibit inductive properties.