公开(公告)号：US20170186660A1

公开(公告)日：2017-06-29

申请号：US15457736

申请日：2017-03-13

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： See Chian Lim ,  Teck Tiong Tan ,  Yung Kuan Hsiao ,  Ching Meng Fang ,  Yoke Hor Phua ,  Bartholomew Liao

IPC: H01L23/31 ,  H01L23/00 ,  H01L23/15 ,  H01L21/768 ,  H01L21/56 ,  H01L23/538

CPC classification number: H01L23/3128 ,  H01L21/56 ,  H01L21/568 ,  H01L21/768 ,  H01L23/145 ,  H01L23/15 ,  H01L23/295 ,  H01L23/3135 ,  H01L23/49822 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/11 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/96 ,  H01L2924/01322 ,  H01L2924/12 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/19 ,  H01L2224/11

Abstract: A semiconductor device has a plurality of semiconductor die. A first prefabricated insulating film is disposed over the semiconductor die. A conductive layer is formed over the first prefabricated insulating film. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The first prefabricated insulating film is laminated over the semiconductor die. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The semiconductor die is embedded within the first prefabricated insulating film with the first prefabricated insulating film covering first and side surfaces of the semiconductor die. The interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A portion of the first prefabricated insulating film is removed after disposing the first prefabricated insulating film over the semiconductor die. A second prefabricated insulating film is disposed over the first prefabricated insulating film.

公开(公告)号：US20250087545A1

公开(公告)日：2025-03-13

申请号：US18462612

申请日：2023-09-07

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Kai Chong Chan ,  Linda Pei Ee Chua ,  Yung Kuan Hsiao ,  Beng Yee Teh’ ,  Jian Zuo ,  Yaojian Lin

IPC: H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L23/498

Abstract: A semiconductor device has a pre-molded discrete electrical component and a first encapsulant deposited over the pre-molded discrete electrical component. A first conductive layer is formed over the first encapsulant and pre-molded discrete electrical component. An electrical component is disposed over the first conductive layer. A second encapsulant is deposited over the electrical component and first conductive layer. A second conductive layer is formed over the second encapsulant. A conductive pillar is formed between the first conductive layer and second conductive layer through the second encapsulant. The pre-molded discrete electrical component has a discrete component and a third encapsulant deposited around the discrete component. The discrete component has an electrical terminal, a finish formed over the electrical terminal, and a third conductive layer formed over the finish. An interconnect structure formed on the electrical component is oriented toward the first conductive layer or the second conductive layer.