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    GENOTYPING OF BOVINE PAPILLOMAVIRUS GENOTYPES
    5.
    发明申请
    GENOTYPING OF BOVINE PAPILLOMAVIRUS GENOTYPES 审中-公开
    牛血清病毒基因组遗传学研究

    公开(公告)号：US20120107797A1

    公开(公告)日：2012-05-03

    申请号：US13256930

    申请日：2010-03-17

    申请人： Markus Schmitt ,  Martin Müller

    发明人： Markus Schmitt ,  Martin Müller

    IPC分类号： C12Q1/70

    CPC分类号： C12Q1/708

    摘要： The present invention is concerned with the provision of diagnostic means and methods. Specifically, it relates to a composition comprising oligonucleotides selected from at least two different groups of oligonucleotides, said groups comprising at least one pair of oligonucleotides being capable of specifically amplifying polynucleotides comprised by a Bovine Papillomavirus (BPV), said BPV being selected from the group consisting of BPV-1, BPV-2, BPV-3, BPV-4, BPV-5, BPV-6, BPV-7, BPV-8, BPV-9, BPV-10, and BAPV-11 as well as uses based on said composition and kits comprising it. Moreover, contemplated is a method for the simultaneous detection and/or identification of BPV types in a sample.

    摘要翻译： 本发明涉及提供诊断手段和方法。 具体地，本发明涉及包含寡核苷酸的组合物，所述寡核苷酸选自至少两个不同的寡核苷酸组，所述组包含至少一对能够特异性扩增由牛乳头瘤病毒（BPV）组成的多核苷酸的寡核苷酸，所述BPV选自组 由BPV-1，BPV-2，BPV-3，BPV-4，BPV-5，BPV-6，BPV-7，BPV-8，BPV-9，BPV-10和BAPV-11组成， 基于所述组合物和包含它的试剂盒。 此外，预期的是同时检测和/或识别样品中BPV类型的方法。

    SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT
    6.
    发明申请
    SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT 有权
    半导体元件及其生产方法

    公开(公告)号：US20080237701A1

    公开(公告)日：2008-10-02

    申请号：US11866662

    申请日：2007-10-03

    申请人： Armin Willmeroth ,  Michael Rueb ,  Carolin Tolksdorf ,  Markus Schmitt

    发明人： Armin Willmeroth ,  Michael Rueb ,  Carolin Tolksdorf ,  Markus Schmitt

    IPC分类号： H01L29/76 ,  H01L21/425

    CPC分类号： H01L29/7811 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402

    摘要： A semiconductor component includes a semiconductor body having an edge with an edge zone of a first conductivity type. Charge compensation regions of a second conductivity type are embedded into the edge zone, with the charge compensation regions extending from a top side of the semiconductor component vertically into the semiconductor body. For the number Ns of charge carriers present in a volume Vs between two charge compensation regions that are adjacent in a direction perpendicular to the edge, and for the number Np of charge carriers present in a volume Vp between two charge compensation regions that are adjacent in a direction parallel to the edge, Np>Ns holds true.

    摘要翻译： 半导体部件包括具有边缘的第一导电类型的边缘区域的半导体本体。 第二导电类型的电荷补偿区域被嵌入到边缘区域中，电荷补偿区域从半导体组件的顶侧垂直延伸到半导体本体中。 对于在垂直于边缘的方向上相邻的两个电荷补偿区域之间存在的体积V S s中存在的电荷载体的数量N SUB，以及数字N < 在与边缘平行的方向上相邻的两个电荷补偿区域之间存在于体积V p p中的电荷载体的SUB> p N N 成立。

    Lateral MISFET and method for fabricating it
    7.
    发明申请
    Lateral MISFET and method for fabricating it 有权
    侧面MISFET及其制造方法

    公开(公告)号：US20060261384A1

    公开(公告)日：2006-11-23

    申请号：US11276782

    申请日：2006-03-14

    申请人： Michael Rueb ,  Markus Schmitt ,  Carolin Tolksdorf ,  Uwe Wahl ,  Armin Willmeroth

    发明人： Michael Rueb ,  Markus Schmitt ,  Carolin Tolksdorf ,  Uwe Wahl ,  Armin Willmeroth

    IPC分类号： H01L29/76

    CPC分类号： H01L29/782 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/7825

    摘要： A lateral MISFET having a semiconductor body has a doped semiconductor substrate of a first conduction type and an epitaxial layer of a second conduction type, which is complementary to the first conduction type, the epitaxial layer being provided on the semiconductor substrate. This MISFET has, on the top side of the semiconductor body, a drain, a source, and a gate electrode with gate insulator. A semiconductor zone of the first conduction type is embedded in the epitaxial layer in a manner adjoining the gate insulator, a drift zone of the second conduction type being arranged between the semiconductor zone and the drain electrode in the epitaxial layer. The drift zone has pillar-type regions which are arranged in rows and columns and whose boundary layers have a metal layer which in each case forms a Schottky contact with the material of the drift zone.

    摘要翻译： 具有半导体本体的横向MISFET具有第一导电类型的掺杂半导体衬底和与第一导电类型互补的第二导电类型的外延层，外延层设置在半导体衬底上。 该MISFET在半导体本体的顶侧具有漏极，源极和具有栅极绝缘体的栅电极。 第一导电类型的半导体区域以与栅极绝缘体相邻的方式嵌入在外延层中，第二导电类型的漂移区被布置在外延层中的半导体区域和漏极之间。 漂移区具有排列成行和列的柱状区域，其边界层具有金属层，其在每种情况下与漂移区的材料形成肖特基接触。

    Minipleat synthetic air filter assembly
    8.
    发明授权
    Minipleat synthetic air filter assembly 有权
    Minipleat合成空气过滤器总成

    公开(公告)号：US06464745B2

    公开(公告)日：2002-10-15

    申请号：US09771096

    申请日：2001-01-26

    申请人： Samuel Rivera ,  Simon D. Ladd ,  Michelle Pritzkau ,  Kent Mertz ,  Markus Schmitt

    发明人： Samuel Rivera ,  Simon D. Ladd ,  Michelle Pritzkau ,  Kent Mertz ,  Markus Schmitt

    IPC分类号： B01D4610

    CPC分类号： B01D46/523 ,  B01D46/0005 ,  B01D46/10 ,  B01D2279/50 ,  Y10S55/31

    摘要： A minipleat synthetic filter assembly is provided. The filter assembly includes a frame assembly and a section of pleated filter media mounted within the frame assembly. The frame assembly includes a plurality of corner members and an equal plurality of side members interconnecting the corner members. The frame assembly may be made in any desired size and shape to accommodate a wide variety of applications. The section of filter media is a sheet of a synthetic nonwoven material folded to form minipleats having a spacing between adjacent peaks of no greater than 20 mm.

    摘要翻译： 提供了一个微型合成过滤器组件。 过滤器组件包括框架组件和安装在框架组件内的打褶过滤介质的一部分。 框架组件包括多个角部构件和相互连接角部构件的相等的多个侧构件。 框架组件可以制成任何期望的尺寸和形状以适应各种各样的应用。 过滤介质的一部分是合成非织造材料的片材，折叠形成具有不大于20mm的相邻峰之间的间隔的微型薄片。

    Composition comprising an oligonucleotide mixture for the detection of contaminations in cell cultures
    9.
    发明授权
    Composition comprising an oligonucleotide mixture for the detection of contaminations in cell cultures 有权
    组合物，其包含用于检测细胞培养物中污染物的寡核苷酸混合物

    公开(公告)号：US09034604B2

    公开(公告)日：2015-05-19

    申请号：US12920095

    申请日：2009-03-05

    申请人： Markus Schmitt ,  Michael Pawlita

    发明人： Markus Schmitt ,  Michael Pawlita

    IPC分类号： C12Q1/68 ,  C12Q1/70

    CPC分类号： C12Q1/689 ,  C12Q1/686 ,  C12Q1/6881 ,  C12Q1/701 ,  C12Q1/702 ,  C12Q1/705 ,  C12Q2600/16

    摘要： The present invention relates to a method for determining contaminations in a cell culture sample comprising the steps of: a) contacting a sample of a cell culture suspected to comprise contaminations with a composition comprising oligonucleotides under conditions which allow for amplification of polynucleotides, wherein said oligonucleotides comprise oligonucleotides of at least three different groups of oligonucleotides, and b) determining the contaminations based on the amplified polynucleotides obtained by using the oligonucleotide groups of step (a). Moreover, the invention relates to a composition comprising an oligonucleotide mixture. Further encompassed by the present invention is a composition comprising a probe oligonucleotide mixture. Finally, the present invention also relates to kits comprising said oligonucleotide mixtures.

    摘要翻译： 本发明涉及一种用于确定细胞培养物样品中污染物的方法，包括以下步骤：a）在允许扩增多核苷酸的条件下，将怀疑含有污染物的细胞培养物样品与包含寡核苷酸的组合物接触，其中所述寡核苷酸 包含至少三种不同组寡核苷酸的寡核苷酸，和b）基于通过使用步骤（a）的寡核苷酸组获得的扩增多核苷酸来测定污染物。 此外，本发明涉及包含寡核苷酸混合物的组合物。 本发明进一步包括的是包含探针寡核苷酸混合物的组合物。 最后，本发明还涉及包含所述寡核苷酸混合物的试剂盒。