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公开(公告)号：US10114114B2
公开(公告)日：2018-10-30
申请号：US14669651
申请日：2015-03-26
Applicant: STMicroelectronics S.r.l.
Inventor： Antonio Davide Leone , Davide Ugo Ghisu , Fabio Quaglia
Abstract: An ultrasonic probe includes: an ultrasonic transducer; an amplification stage; a bias circuit, which determines a bias voltage on an input terminal of the amplification stage; and a selector having an intermediate node, a high-voltage switch between the intermediate node and the transducer, and a first low-voltage switch between the intermediate node and the input terminal. A control unit controls the high-voltage switch and the first low-voltage switch so as to alternately couple and decouple the amplification stage and the transducer. A precharge circuit determines a precharge voltage on the intermediate node as a function of the bias voltage, before the amplification stage and the transducer are coupled.
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公开(公告)号：US09772645B2
公开(公告)日：2017-09-26
申请号：US15076211
申请日：2016-03-21
Applicant: STMicroelectronics S.r.l.
Inventor： Sandro Rossi , Davide Ugo Ghisu , Fabio Quaglia , Antonio Davide Leone
CPC classification number: G05F3/02 , B06B1/0215 , H03K4/94 , H03K17/162
Abstract: A transmission channel transmits high-voltage pulses and receives echos of the high-voltage pulses. The transmission channel includes a current generator circuit, which generates current-integrator drive currents. The control circuitry generates one or more control signals to control generation of current-integrator drive currents by the current generator circuit during transducer-driving periods. A current integrator integrates current-integrator drive currents generated by current generator circuit to generate transducer drive signals.
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3.发明申请ULTRASONIC PROBE WITH PRECHARGE CIRCUIT AND METHOD OF CONTROLLING AN ULTRASONIC PROBE 审中-公开带前置电路的超声波探头及超声波探头的控制方法公开(公告)号：US20160077198A1
公开(公告)日：2016-03-17
申请号：US14669651
申请日：2015-03-26
Applicant: STMicroelectronics S.r.l.
Inventor： Antonio Davide Leone , Davide Ugo Ghisu , Fabio Quaglia
IPC: G01S7/52
CPC classification number: G01S7/52023 , G01N29/34 , G01N29/36 , G01N2291/106 , H03F1/301 , H03F3/70 , H03F2200/453 , H03F2200/456
Abstract: An ultrasonic probe includes: an ultrasonic transducer; an amplification stage; a bias circuit, which determines a bias voltage on an input terminal of the amplification stage; and a selector having an intermediate node, a high-voltage switch between the intermediate node and the transducer, and a first low-voltage switch between the intermediate node and the input terminal. A control unit controls the high-voltage switch and the first low-voltage switch so as to alternately couple and decouple the amplification stage and the transducer. A precharge circuit determines a precharge voltage on the intermediate node as a function of the bias voltage, before the amplification stage and the transducer are coupled.
Abstract translation: 超声波探头包括：超声换能器; 放大级; 偏置电路，其确定放大级的输入端上的偏置电压; 以及具有中间节点，中间节点和换能器之间的高压开关以及中间节点和输入端子之间的第一低压开关的选择器。 控制单元控制高压开关和第一低压开关，以交替地耦合和去耦放大级和换能器。 在放大级和换能器耦合之前，预充电电路确定中间节点上的预充电电压作为偏置电压的函数。
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公开(公告)号：US11950511B2
公开(公告)日：2024-04-02
申请号：US16277952
申请日：2019-02-15
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Francesco Procopio , Fabio Quaglia
CPC classification number: H10N30/87 , B06B1/0292 , B06B1/06 , B06B1/0622 , G10K9/125 , G10K11/02
Abstract: A device for emitting an ultrasound acoustic wave in a propagation medium, comprising: a package including a base substrate and a cap coupled to the base substrate and defining therewith a chamber in the package; a semiconductor die, coupled to the base substrate in the chamber, comprising a semiconductor body; a micromachined ultrasonic transducer (MUT) integrated at least in part in the semiconductor body and including a cavity in the semiconductor body and a membrane suspended over the cavity; and an actuator, operatively coupled to the membrane, which can be operated for generating a deflection of the membrane. The membrane is designed in such a way that a resonance frequency thereof matches an acoustic resonance frequency that, during operation of the MUT, develops in said chamber of the package.
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5.发明授权公开(公告)号：US11891298B2
公开(公告)日：2024-02-06
申请号：US17839131
申请日：2022-06-13
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Fabio Quaglia , Marco Ferrera , Marco Del Sarto
CPC classification number: B81B7/007 , B81B7/008 , B81C1/0023 , B81C2203/035 , H01L29/66
Abstract: A process for manufacturing MEMS devices, includes forming a first assembly, which comprises: a dielectric region; a redistribution region; and a plurality of unit portions. Each unit portion of the first assembly includes: a die arranged in the dielectric region; and a plurality of first and second connection elements, which extend to opposite faces of the redistribution region and are connected together by paths that extend in the redistribution region, the first connection elements being coupled to the die. The process further includes: forming a second assembly which comprises a plurality of respective unit portions, each of which includes a semiconductor portion and third connection elements; mechanically coupling the first and second assemblies so as to connect the third connection elements to corresponding second connection elements; and then removing at least part of the semiconductor portion of each unit portion of the second assembly, thus forming corresponding membranes.
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Patent Agency Ranking
公开(公告)号：US20170312782A1
公开(公告)日：2017-11-02
申请号：US15463858
申请日：2017-03-20
Applicant: STMicroelectronics S.r.l.
Inventor： Marco Morelli , Fabio Quaglia , Fabrizio Fausto Renzo Toia , Marco Sambi , Giuseppe Barillaro
CPC classification number: B06B1/0292 , A61B8/4483 , B06B1/0644 , B06B1/067 , B06B1/0685 , G10K9/22 , G10K11/02 , H04R19/005
Abstract: An acoustic device includes a micro-machined acoustic transducer element, an acoustically attenuating region, and an acoustic matching region arranged between the acoustic transducer element and the acoustically attenuating region. The acoustic transducer element is formed in a first substrate housing a cavity delimiting a membrane. A second substrate of semiconductor material integrating an electronic circuit is arranged between the acoustic transducer element and the acoustically attenuating region. The acoustic matching region has a first interface with the second substrate and a second interface with the acoustically attenuating region. The acoustic matching region has an impedance matched to the impedance of the second substrate in proximity of the first interface, and an impedance matched to the acoustically attenuating region in proximity of the second interface.
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公开(公告)号：US12225824B2
公开(公告)日：2025-02-11
申请号：US17485719
申请日：2021-09-27
Applicant: STMicroelectronics S.r.l.
Inventor： Domenico Giusti , Irene Martini , Davide Assanelli , Paolo Ferrarini , Carlo Luigi Prelini , Fabio Quaglia
Abstract: A piezoelectric microelectromechanical structure is provided with a piezoelectric stack having a main extension in a horizontal plane and a variable section in a plane transverse to the horizontal plane. The stack is formed by a bottom-electrode region, a piezoelectric material region arranged on the bottom-electrode region, and a top-electrode region arranged on the piezoelectric material region. The piezoelectric material region has, as a result of the variable section, a first thickness along a vertical axis transverse to the horizontal plane at a first area, and a second thickness along the same vertical axis at a second area. The second thickness is smaller than the first thickness. The structure at the first and second areas can form piezoelectric detector and a piezoelectric actuator, respectively.
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公开(公告)号：US11600765B2
公开(公告)日：2023-03-07
申请号：US17137220
申请日：2020-12-29
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Domenico Giusti , Carlo Luigi Prelini , Marco Ferrera , Carla Maria Lazzari , Luca Seghizzi , Nicolo′ Boni , Roberto Carminati , Fabio Quaglia
Abstract: The MEMS actuator is formed by a substrate, which surrounds a cavity; by a deformable structure suspended on the cavity; by an actuation structure formed by a first piezoelectric region of a first piezoelectric material, supported by the deformable structure and configured to cause a deformation of the deformable structure; and by a detection structure formed by a second piezoelectric region of a second piezoelectric material, supported by the deformable structure and configured to detect the deformation of the deformable structure.
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公开(公告)号：US09853617B2
公开(公告)日：2017-12-26
申请号：US15168832
申请日：2016-05-31
Applicant: STMicroelectronics S.R.L.
Inventor： Marco Sautto , Fabio Quaglia , Giulio Ricotti , Andrea Mazzanti
CPC classification number: H03G1/0094 , H03F3/005 , H03F3/2175 , H03F3/45 , H03F3/45264 , H03F2200/312 , H03F2203/45288
Abstract: A programmable-gain amplifier includes: two complementary cross-coupled transistor pairs mutually coupled with each transistor in one pair having a current flow path cascaded with a current flow path of a respective one of the transistors in the other pair. First and second coupling points are formed between the pairs; with first and second sampling capacitors coupled thereto. First and second input stages have input terminals to input signals for sampling by the first and second sampling capacitors. Switching means couple the first and second input stages to the sampling capacitors so the input signals are sampled as sampled signals on the sampling capacitors. The switching means energizes the complementary cross-coupled transistor pairs so the signals sampled on the sampling capacitors undergo negative resistance regeneration growing exponentially over time to thereby provide an exponential amplifier gain.
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公开(公告)号：US20170179897A1
公开(公告)日：2017-06-22
申请号：US15168832
申请日：2016-05-31
Applicant: STMicroelectronics S.R.L.
Inventor： Marco Sautto , Fabio Quaglia , Giulio Ricotti , Andrea Mazzanti
CPC classification number: H03G1/0094 , H03F3/005 , H03F3/2175 , H03F3/45 , H03F3/45264 , H03F2200/312 , H03F2203/45288
Abstract: A programmable-gain amplifier includes: two complementary cross-coupled transistor pairs mutually coupled with each transistor in one pair having a current flow path cascaded with a current flow path of a respective one of the transistors in the other pair. First and second coupling points are formed between the pairs; with first and second sampling capacitors coupled thereto. First and second input stages have input terminals to input signals for sampling by the first and second sampling capacitors. Switching means couple the first and second input stages to the sampling capacitors so the input signals are sampled as sampled signals on the sampling capacitors. The switching means energizes the complementary cross-coupled transistor pairs so the signals sampled on the sampling capacitors undergo negative resistance regeneration growing exponentially over time to thereby provide an exponential amplifier gain.
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