公开(公告)号：US20150279834A1

公开(公告)日：2015-10-01

申请号：US14638292

申请日：2015-03-04

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Jean-Robert MANOUVRIER ,  Estelle Batail

IPC: H01L27/02 ,  G02B6/122

CPC classification number: G02B6/122 ,  G02B6/4275 ,  G02B6/4295 ,  H01L27/0248 ,  H01L29/74

Abstract: A thyristor may include a first optical waveguide segment in a semiconductor material, having first and second complementary longitudinal parts of opposite conductivity types configured to form a longitudinal bipolar junction therebetween. The thyristor may further include a second optical waveguide segment in a semiconductor material, adjacent the first waveguide segment and having first and second complementary longitudinal parts of opposite conductivity types configured to form a longitudinal bipolar junction therebetween. A transverse bipolar junction may be between the second longitudinal portions of the first and second waveguide segments. An electrical insulator may separate each of the first longitudinal portions from the waveguide segment adjacent thereto.

Abstract translation: 晶闸管可以包括半导体材料中的第一光波导段，其具有构造为在其间形成纵向双极结的相反导电类型的第一和第二互补纵向部分。 晶闸管可以进一步包括半导体材料中的第二光波导段，邻近第一波导段并且具有构造成在其间形成纵向双极结的相反导电类型的第一和第二互补纵向部分。 横向双极结可以在第一和第二波导段的第二纵向部分之间。 电绝缘体可以将每个第一纵向部分与与其相邻的波导段分开。

公开(公告)号：US20150277038A1

公开(公告)日：2015-10-01

申请号：US14656981

申请日：2015-03-13

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Jean-Robert MANOUVRIER ,  Patrick LEMAITRE ,  Jean-Francois CARPENTIER

IPC: G02B6/12 ,  G02B6/13

CPC classification number: G02B6/12 ,  G02B6/122 ,  G02B6/13 ,  G02B6/132 ,  H01L29/74

Abstract: An optical waveguide in a semiconductor material, may include, between two adjacent portions of the waveguide, a plurality of parallel strips of alternating conductivity types forming a plurality of opposing bipolar junctions between the two adjacent portions.

Abstract translation: 在半导体材料中的光波导可以包括在波导的两个相邻部分之间的多个交替导电类型的平行条带，在两个相邻部分之间形成多个相对的双极结。

公开(公告)号：US20140153078A1

公开(公告)日：2014-06-05

申请号：US14084702

申请日：2013-11-20

Applicant: STMICROELECTRONICS SA

Inventor： Jean-Robert MANOUVRIER

IPC: G02F1/015

CPC classification number: G02F1/015 ,  G02F1/025 ,  G02F1/2257

Abstract: A simulation model is for an optical modulator that may include an optical phase shifter in a semiconductor material structure between two sections of an optical waveguide. The semiconductor material structure may include one of a P-N and P-I-N junction in a plane parallel to an axis of the optical waveguide. The model may include a diode configured to characterize an electrical behavior of the one of the P-N and P-I-N junction such that a change in a global refractive index of the optical phase shifter is expressed, by a coefficient, based upon an amount of charges in the one of the P-N and P-I-N junctions and raised to a power. The coefficient and the power may be empirical values based upon the semiconductor material and a wavelength.

Abstract translation: 仿真模型用于可以包括在光波导的两个部分之间的半导体材料结构中的光学移相器的光学调制器。 半导体材料结构可以在平行于光波导的轴的平面中包括P-N和P-I-N结中的一个。 该模型可以包括被配置为表征PN和PIN结中的一个的电气行为的二极管，使得光学移相器的全局折射率的变化由系数表示，基于在 一个PN和PIN接口，并提高到一个权力。 系数和功率可以是基于半导体材料和波长的经验值。

公开(公告)号：US20170307468A1

公开(公告)日：2017-10-26

申请号：US15133614

申请日：2016-04-20

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Jean-Francois CARPENTIER ,  Patrick LEMAITRE ,  Jean-Robert MANOUVRIER ,  Charles BAUDOT ,  Bertrand BOROT

IPC: G01M11/02 ,  G02B6/12 ,  G02B6/28 ,  G02B6/34

CPC classification number: G01M11/02 ,  G01R31/2656 ,  G01R31/27 ,  G01R31/2884 ,  G01R31/303 ,  G01R31/311 ,  G01R31/31728 ,  G01R35/00 ,  G02B6/00 ,  G02B6/12004 ,  G02B6/2808 ,  G02B6/34

Abstract: A semiconductor device may include a semiconductor wafer, and a reference circuit carried by the semiconductor wafer. The reference circuit may include optical DUTs, a first set of photodetectors coupled to outputs of the optical DUTs, an optical splitter coupled to inputs of the optical DUTs, and a second set of photodetectors coupled to the optical splitter. The optical splitter is to be coupled to an optical source and configured to transmit a reference optical signal to the first set of photodetectors via the optical DUTs and the second set of photodetectors.

公开(公告)号：US20150279883A1

公开(公告)日：2015-10-01

申请号：US14660847

申请日：2015-03-17

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Jean-Robert MANOUVRIER ,  Pascal FONTENEAU ,  Xavier MONTAGNER

IPC: H01L27/146 ,  H01L29/423

CPC classification number: H01L27/14614 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L29/4236

Abstract: The present disclosure relates to a photodiode comprising: a P-conductivity type substrate region, an electric charge collecting region for collecting electric charges appearing when a rear face of the substrate region receives light, the collecting region comprising an N-conductivity type region formed deep in the substrate region, an N-conductivity type read region formed in the substrate region, and an isolated transfer gate, formed in the substrate region in a deep isolating trench extending opposite a lateral face of the N-conductivity type region, next to the read region, and arranged for receiving a gate voltage to transfer electric charges stored in the collecting region toward the read region.

Abstract translation: 本发明涉及一种光电二极管，包括：P导电型衬底区域，用于收集当衬底区域的后表面接收光时出现的电荷的电荷收集区域，所述收集区域包括形成深的N导电类型区域 在基板区域中，形成在基板区域中的N导电型读取区域和隔离的转移栅极，形成在与N导电型区域的侧面相反延伸的深隔离沟槽中的基板区域中， 并且被布置为接收栅极电压以将存储在收集区域中的电荷转移到读取区域。

公开(公告)号：US20140341498A1

公开(公告)日：2014-11-20

申请号：US14271641

申请日：2014-05-07

Applicant: STMICROELECTRONICS SA

Inventor： Jean-Robert MANOUVRIER

IPC: G02F1/225 ,  G02F1/015 ,  G02F1/025 ,  H01L31/18

CPC classification number: G02F1/025 ,  G02B2006/12142 ,  G02F1/0123 ,  G02F1/2257 ,  G02F2001/212

Abstract: A semiconductor electro-optical phase shifter may include a first optical action zone having a minimum doping level, a first lateral zone and a central zone flanking the first optical action zone along a first axis, doped respectively at first and second conductivity types so as to form a P-I-N junction between the first lateral zone and the central zone. The phase shifter may include a second optical action zone having a threshold doping level, and a second lateral zone flanking the second optical action zone with the central zone along the first axis doped at the first conductivity type so as to form a P-I-N junction between the second lateral zone and the central zone.

Abstract translation: 半导体电光移相器可以包括分别以第一和第二导电类型掺杂的具有最小掺杂水平的第一光学作用区域，第一横向区域和沿着第一轴线的第一光学作用区域的侧面的中心区域，以便 在第一侧向区域和中心区域之间形成PIN结。 移相器可以包括具有阈值掺杂水平的第二光学作用区域和位于第二光学作用区域的第二侧向区域，其中中心区域沿着以第一导电类型掺杂的第一轴线形成PIN结， 第二横向区域和中心区域。

公开(公告)号：US20170003449A1

公开(公告)日：2017-01-05

申请号：US14754994

申请日：2015-06-30

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Jean-Robert MANOUVRIER ,  Jean-Francois CARPENTIER ,  Patrick LEMAITRE

IPC: G02B6/124 ,  G02B6/30 ,  G02B5/18

CPC classification number: G02B6/124 ,  G02B6/29395 ,  G02B6/30 ,  G02F1/025 ,  G02F2201/302

Abstract: An electro-optic device may include a photonic chip having an optical grating coupler at a surface. The optical grating coupler may include a first semiconductor layer having a first base and first fingers extending outwardly from the first base. The optical grating coupler may include a second semiconductor layer having a second base and second fingers extending outwardly from the second base and being interdigitated with the first fingers to define semiconductor junction areas, with the first and second fingers having a non-uniform width. The electro-optic device may include a circuit coupled to the optical grating coupler and configured to bias the semiconductor junction areas and change one or more optical characteristics of the optical grating coupler.

Abstract translation: 电光器件可以包括在表面具有光栅耦合器的光子芯片。 光栅耦合器可以包括第一半导体层，其具有从第一基底向外延伸的第一基底和第一指状物。 光栅耦合器可以包括第二半导体层，第二半导体层具有从第二基底向外延伸的第二基极和第二指状物，并且与第一指状物交叉以限定半导体结区域，第一和第二指状物具有不均匀的宽度。 电光器件可以包括耦合到光栅耦合器并被配置为偏置半导体结区域并改变光栅耦合器的一个或多个光学特性的电路。

公开(公告)号：US20140376852A1

公开(公告)日：2014-12-25

申请号：US14263068

申请日：2014-04-28

Applicant: STMICROELECTRONICS SA

Inventor： Jean-Robert MANOUVRIER

IPC: G02F1/025

CPC classification number: G02F1/025

Abstract: A semiconductor electro-optical phase shifter may include a central zone configured to be placed in an optical waveguide and doped at a first conductivity type, a first lateral zone adjacent a first face of the central region and doped at a second conductivity type, and a second lateral zone adjacent a second face of the central zone and doped at the second conductivity type.

Abstract translation: 半导体电光移相器可以包括被配置为放置在光波导中并以第一导电类型掺杂的中心区，邻近中心区的第一面并以第二导电类型掺杂的第一横向区， 第二横向区域，邻近中心区域的第二面并以第二导电类型掺杂。

公开(公告)号：US20140241657A1

公开(公告)日：2014-08-28

申请号：US14182033

申请日：2014-02-17

Applicant: STMICROELECTRONICS SA

Inventor： Jean-Robert MANOUVRIER

IPC: G02F1/01 ,  G01J9/00 ,  G01J9/02 ,  G02F1/025

CPC classification number: G02F1/0123 ,  G01J9/00 ,  G01J9/02 ,  G02F1/025 ,  G02F1/218 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/58 ,  G02F2203/50 ,  H04B10/5053 ,  H04B10/50575

Abstract: An optical modulator uses an optoelectronic phase comparator configured to provide, in the form of an electrical signal, a measure of a phase difference between two optical waves. The phase comparator includes an optical directional coupler having two coupled channels respectively defining two optical inputs for receiving the two optical waves to be compared. Two photodiodes are configured to respectively receive the optical output powers of the two channels of the directional coupler. An electrical circuit is configured to supply, as a measure of the optical phase shift, an electrical signal proportional to the difference between the electrical signals produced by the two photodiodes.

Abstract translation: 光调制器使用光电相位比较器，其被配置为以电信号的形式提供两个光波之间的相位差的量度。 相位比较器包括具有两个耦合通道的光学定向耦合器，该耦合通道分别限定用于接收要比较的两个光波的两个光学输入。 两个光电二极管被配置为分别接收定向耦合器的两个通道的光输出功率。 电路被配置为提供与两个光电二极管产生的电信号之间的差成比例的电信号作为光相移的测量。

公开(公告)号：US20170059893A1

公开(公告)日：2017-03-02

申请号：US14836011

申请日：2015-08-26

Applicant: STMICROELECTRONICS (CROLLES 2) SAS ,  STMICROELECTRONICS SA

Inventor： Patrick LEMAITRE ,  Jean-Francois CARPENTIER ,  Charles BAUDOT ,  Jean-Robert MANOUVRIER

IPC: G02F1/025 ,  G02B6/293

CPC classification number: G02F1/225 ,  G02F1/025 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2203/15

Abstract: An electro-optic (E/O) device includes an asymmetric optical coupler having an input and first and second outputs, a first optical waveguide arm coupled to the first output of the first asymmetric optical coupler, and a second optical waveguide arm coupled to the second output of the first asymmetric optical coupler. At least one E/O amplitude modulator is coupled to at least one of the first and second optical waveguide arms. An optical combiner is coupled to the first and second optical waveguide arms downstream from the at least one E/O amplitude modulator.

Abstract translation: 电光（E / O）装置包括具有输入和第一和第二输出的不对称光耦合器，耦合到第一非对称光耦合器的第一输出的第一光波导臂和耦合到第一和第二输出的第二光波导臂 第二非对称光耦合器的第二输出。 至少一个E / O振幅调制器耦合到第一和第二光波导臂中的至少一个。 光合成器耦合到至少一个E / O振幅调制器下游的第一和第二光波导臂。