HETEROJUNCTION BIPOLAR TRANSISTOR RELIABILITY SIMULATION METHOD
    5.
    发明申请
    HETEROJUNCTION BIPOLAR TRANSISTOR RELIABILITY SIMULATION METHOD 审中-公开
    异相双极晶体管可靠性仿真方法

    公开(公告)号:US20150142410A1

    公开(公告)日:2015-05-21

    申请号:US14541627

    申请日:2014-11-14

    CPC classification number: G06F17/5036 G06F17/5063 G06F2217/78

    Abstract: A method of circuit simulation includes: simulating, by a processing device, behavior of a heterojunction bipolar transistor device based on at least a first base-emitter voltage of the transistor to determine a first base or collector current density of the HBT device; and determining whether the application of the first base-emitter voltage to the HBT device will result in base current degradation by performing a first comparison of the first current density with a first current density limit.

    Abstract translation: 一种电路仿真的方法包括:通过处理器件模拟基于晶体管的至少第一基极 - 发射极电压的异质结双极晶体管器件的行为,以确定HBT器件的第一基极或集电极电流密度; 以及通过执行所述第一电流密度与第一电流密度极限的第一比较来确定是否将所述第一基极 - 发射极电压施加到所述HBT器件将导致基极电流劣化。

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