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公开(公告)号：US20150221780A1
公开(公告)日：2015-08-06
申请号：US14614097
申请日：2015-02-04
发明人： Makoto KIYAMA , Takashi MATSUURA , Mitsuru SHIMAZU
IPC分类号： H01L29/861 , H01L29/20 , H01L29/16
CPC分类号： H01L29/0619 , H01L29/1608 , H01L29/2003 , H01L29/36 , H01L29/402 , H01L29/6606 , H01L29/872
摘要： A diode having excellent switching characteristics is provided. A diode includes a silicon carbide substrate, a stop layer, a drift layer, a guard ring, a Schottky electrode, an ohmic electrode, and a surface protecting film. At a measurement temperature of 25° C., a product R•Q of a forward ON resistance R of the diode and response charges Q of the diode satisfies relation of R•Q≦0.24×Vblocking2. The ON resistance R is found from forward current-voltage characteristics of the diode. A reverse blocking voltage Vblocking is defined as a reverse voltage which produces breakdown of the diode. The response charges Q are found by integrating a capacitance (C) obtained in reverse capacitance-voltage characteristics of the diode in a range from 0 V to Vblocking.
摘要翻译： 提供具有优异的开关特性的二极管。 二极管包括碳化硅衬底，停止层，漂移层，保护环，肖特基电极，欧姆电极和表面保护膜。 在25℃的测量温度下，二极管的正向导通电阻R的乘积R·Q和二极管的响应电荷Q满足R·Q＆nlE; 0.24×Vblocking2的关系。 从二极管的正向电流 - 电压特性中可以看到导通电阻R。 反向阻断电压Vblocking被定义为产生二极管击穿的反向电压。 通过将在二极管的反向电容 - 电压特性中获得的电容（C）在0V至Vblocking的范围内进行积分来找到响应电荷Q。
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公开(公告)号：US20200381509A1
公开(公告)日：2020-12-03
申请号：US16607211
申请日：2017-09-21
摘要： A semi-insulating gallium arsenide crystal substrate has a main surface with a plane orientation of (100) and a diameter of 2R mm, the main surface having a specific resistance with an average value of 5×107 Ω·cm or more and with a standard deviation divided by the average value of the specific resistance, or with a coefficient of variation, of 0.50 or less in each of three measurement areas having their centers at distances of 0 mm, 0.5R mm, and (R-17) mm, respectively, from the center of the main surface in the [010] direction.
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公开(公告)号：US20180237946A1
公开(公告)日：2018-08-23
申请号：US15958589
申请日：2018-04-20
发明人： Makoto KIYAMA , Ryu HIROTA , Seiji NAKAHATA
CPC分类号： C30B29/406 , C30B25/04 , C30B25/165 , C30B25/183 , H01L21/02395 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L29/04 , H01L29/2003 , H01L29/66212 , H01L29/872
摘要： There is provided a gallium nitride substrate having a C plane as a surface with a diameter of not less than 100 mm, the gallium nitride substrate including first regions and second regions having different average values of band-edge emission intensities in a micro photoluminescence mapping at 25° C. in a square region located in the C plane and having sides each having a length of 2 mm, an average value Ibe1a of the band-edge emission intensities of the first regions and an average value Ibe2a of the band-edge emission intensities of the second regions satisfying the following relational expressions (I) and (II): Ibe1a>Ibe2a . . . (I) and 2.1≤Ibe1a/Ibe2a≤9.4 . . . (II).
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公开(公告)号：US20210091289A1
公开(公告)日：2021-03-25
申请号：US16981586
申请日：2018-12-28
发明人： Masahiro ADACHI , Kotaro HIROSE , Makoto KIYAMA , Takashi MATSUURA , Yoshiyuki YAMAMOTO , Tsunehiro TAKEUCHI , Shunsuke NISHINO
摘要： A thermoelectric conversion material includes: a base material that is a semiconductor composed of a base material element; a first additional element that is an element different from the base material element, has a vacant orbital in a d orbital or f orbital located internal to an outermost shell of the first additional element and forms a first additional level in a forbidden band of the base material; and a second additional element that is an element different from both of the base material element and the first additional element and forms a second additional level in the forbidden band of the base material. A difference is 1 between the number of electrons in an outermost shell of the second additional element and the number of electrons in at least one outermost shell of the base material element.
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5.发明申请公开(公告)号：US20190214538A1
公开(公告)日：2019-07-11
申请号：US16328300
申请日：2017-08-29
CPC分类号： H01L35/14 , C01B19/007 , C01B33/06 , C01P2002/54 , C01P2006/32 , C01P2006/40 , H01L35/16
摘要： A thermoelectric conversion material includes: a base material that is a semiconductor; and an additive element that differs from an element constituting the base material. An additional band formed of the additive element is present within a forbidden band of the base material. A density of states of the additional band has a ratio of greater than or equal to 0.1 relative to a maximum value of a density of states of a valence band adjacent to the forbidden band of the base material.
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公开(公告)号：US20170137966A1
公开(公告)日：2017-05-18
申请号：US15319076
申请日：2015-04-10
发明人： Makoto KIYAMA , Ryu HIROTA , Seiji NAKAHATA
摘要： A gallium nitride substrate has a surface with a diameter of not less than 100 mm, a difference being not less than 0.1 cm−1 and not more than 2 cm−1 between maximum and minimum values of wave numbers at a maximum peak of peaks corresponding to an E2H phonon mode in micro-Raman scattering mapping measurement at each of square regions having sides each having a length of 2 mm, the square regions being located at a total of five locations including a central location and four circumferential edge locations on the surface of the gallium nitride substrate, a difference being not more than 2 cm−1 between maximum and minimum values of the wave numbers at the maximum peak of the peaks corresponding to the E2H phonon mode at all of measurement points in the five locations.
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公开(公告)号：US20200032419A1
公开(公告)日：2020-01-30
申请号：US16571599
申请日：2019-09-16
发明人： Makoto KIYAMA , Ryu HIROTA , Seiji NAKAHATA
摘要： A gallium nitride substrate has a surface with a diameter of not less than 100 mm, a difference being not less than 0.1 cm−1 and not more than 2 cm−1 between maximum and minimum values of wave numbers at a maximum peak of peaks corresponding to an E2H phonon mode in micro-Raman scattering mapping measurement at each of square regions having sides each having a length of 2 mm, the square regions being located at a total of five locations including a central location and four circumferential edge locations on the surface of the gallium nitride substrate, a difference being not more than 2 cm−1 between maximum and minimum values of the wave numbers at the maximum peak of the peaks corresponding to the E2H phonon mode at all of measurement points in the five locations.
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公开(公告)号：US20170101724A1
公开(公告)日：2017-04-13
申请号：US15318029
申请日：2015-04-16
发明人： Makoto KIYAMA , Ryu HIROTA , Seiji NAKAHATA
CPC分类号： C30B29/406 , C30B29/38 , H01L21/02395 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L29/04 , H01L29/2003 , H01L29/66212 , H01L29/872
摘要： There is provided a gallium nitride substrate having a C plane as a surface with a diameter of not less than 100 mm, the gallium nitride substrate including first regions and second regions having different average values of band-edge emission intensities in a micro photoluminescence mapping at 25° C. in a square region located in the C plane and having sides each having a length of 2 mm, an average value Ibe1a of the band-edge emission intensities of the first regions and an average value Ibe2a of the band-edge emission intensities of the second regions satisfying the following relational expressions (I) and (II): Ibe1a>Ibe2a . . . (I) and 2.1≦Ibe1a/Ibe2a≦9.4 . . . (II).
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9.发明申请GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, LAMINATED GROUP III NITRIDE COMPOSITE SUBSTRATE, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权III族氮化物复合基材及其制造方法，层叠III族氮化物复合基板和III族氮化物半导体器件及其制造方法公开(公告)号：US20150349063A1
公开(公告)日：2015-12-03
申请号：US14433237
申请日：2014-09-04
IPC分类号： H01L29/20 , H01L21/762
CPC分类号： H01L29/2003 , H01L21/187 , H01L21/76254 , H01L27/12 , H01L29/475 , H01L29/66212 , H01L29/872
摘要： A group III nitride composite substrate with a diameter of 75 mm or more includes a support substrate having a thickness ts of 0.1 mm or more and 1 mm or less and a group III nitride film having a thickness tf, thinner than the thickness ts, of 0.01 mm or more and 0.25 mm or less that are bonded to each other. An absolute value |Δα| of a difference Δα in thermal expansion coefficient determined by subtracting a thermal expansion coefficient αs of the support substrate from a thermal expansion coefficient αf of the group III nitride film is 2.2×10−6 K−1 or less. A Young's modulus Es and the thickness ts of the support substrate, a Young's modulus Ef and the thickness tf of the group III nitride film, and the difference Δα in thermal expansion coefficient satisfy a relation: ts2/tf≧6Ef·|Δα|/Es.
摘要翻译： 直径为75mm以上的III族氮化物复合衬底包括具有0.1mm以上且1mm以下的厚度ts的支撑衬底和厚度tf比厚度ts更薄的III族氮化物膜， 0.01mm以上且0.25mm以下。 绝对值|＆Dgr;α| 通过从III族氮化物膜的热膨胀系数αf减去支撑基板的热膨胀系数αs而确定的热膨胀系数的差Dgrα为2.2×10 -6 K -1以下。 杨氏模量Es和支撑基板的厚度ts，III族氮化物膜的杨氏模量Ef和厚度tf以及热膨胀系数的差Dgrα满足关系式：ts2 /tf≥6Ef·|＆Dgr ;α| / Es。
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