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    GALLIUM NITRIDE SUBSTRATE
    2.
    发明申请
    GALLIUM NITRIDE SUBSTRATE 审中-公开

    公开(公告)号：US20170137966A1

    公开(公告)日：2017-05-18

    申请号：US15319076

    申请日：2015-04-10

    申请人： Sumitomo Electric Industries, Ltd.

    发明人： Makoto KIYAMA ,  Ryu HIROTA ,  Seiji NAKAHATA

    IPC分类号： C30B29/40 ,  C30B25/02 ,  C30B29/64

    摘要： A gallium nitride substrate has a surface with a diameter of not less than 100 mm, a difference being not less than 0.1 cm−1 and not more than 2 cm−1 between maximum and minimum values of wave numbers at a maximum peak of peaks corresponding to an E2H phonon mode in micro-Raman scattering mapping measurement at each of square regions having sides each having a length of 2 mm, the square regions being located at a total of five locations including a central location and four circumferential edge locations on the surface of the gallium nitride substrate, a difference being not more than 2 cm−1 between maximum and minimum values of the wave numbers at the maximum peak of the peaks corresponding to the E2H phonon mode at all of measurement points in the five locations.

    NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NITRIDE CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NITRIDE CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    氮化物晶体，氮化物晶体衬底，含氮化物晶体衬底，半导体器件及其制造方法

    公开(公告)号：US20130292802A1

    公开(公告)日：2013-11-07

    申请号：US13935360

    申请日：2013-07-03

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： Keiji ISHIBASHI ,  Tokiko KAJI ,  Seiji NAKAHATA ,  Takayuki NISHIURA

    IPC分类号： H01L29/04 ,  H01L29/20

    CPC分类号： G01N23/207 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  G01B15/08 ,  G01N2223/602 ,  G01N2223/634 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L22/12 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  Y10T428/2978

    摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

    摘要翻译： 氮化物晶体的特征在于，结合由X射线衍射测量得到的氮化物晶体的任意特定平行晶格面的平面间隔，与X射线的X射线 满足特定平行晶格面的衍射条件，在由X射线穿透深度为0.3μm的平面间距d1获得的由| d1-d2 | / d2值表示的晶体的表面层处的均匀畸变 并且在5μm的X射线穿透深度处的平面间距d2等于或低于2.1×10-3。 上述结构提供了具有晶体表面层的氮化物晶体，其直接可靠地评估而不破坏晶体，使得其可以以优选的方式用作半导体器件的衬底以及氮化物晶体衬底， 含氮化物晶体基板，半导体装置及其制造方法。

    GaN Single Crystal Substrate and Method of Manufacturing Thereof and GaN-based Semiconductor Device and Method of Manufacturing Thereof
    6.
    发明申请
    GaN Single Crystal Substrate and Method of Manufacturing Thereof and GaN-based Semiconductor Device and Method of Manufacturing Thereof 有权
    GaN单晶衬底及其制造方法和GaN基半导体器件及其制造方法

    公开(公告)号：US20140061668A1

    公开(公告)日：2014-03-06

    申请号：US14075634

    申请日：2013-11-08

    申请人： Sumitomo Electric Industries, Ltd.

    发明人： Shinsuke FUJIWARA ,  Koji UEMATSU ,  Hideki OSADA ,  Seiji NAKAHATA

    IPC分类号： H01L29/20 ,  H01L29/36

    CPC分类号： H01L29/2003 ,  C30B25/20 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/36 ,  H01L33/0075 ,  H01L33/16

    摘要： A GaN single crystal substrate has a main surface with an area of not less than 10 cm2, the main surface has a plane orientation inclined by not less than 65° and not more than 85° with respect to one of a (0001) plane and a (000-1) plane, and the substrate has at least one of a substantially uniform distribution of a carrier concentration in the main surface, a substantially uniform distribution of a dislocation density in the main surface, and a photoelasticity distortion value of not more than 5×10−5, the photoelasticity distortion value being measured by photoelasticity at an arbitrary point in the main surface when light is applied perpendicularly to the main surface at an ambient temperature of 25° C. Thus, the GaN single crystal substrate suitable for manufacture of a GaN-based semiconductor device having a small variation of characteristics can be obtained.

    摘要翻译： GaN单晶衬底具有面积不小于10cm 2的主表面，主表面相对于（0001）面和（0001）面之一具有倾斜不小于65°且不大于85°的面取向 （000-1）面，并且基板具有在主表面中载流子浓度基本均匀分布中的至少一个，主表面中位错密度的基本均匀分布，并且光弹性变形值不大 在5×10-5以下的情况下，在25℃的环境温度下垂直于主表面照射主表面的任意点时，通过光弹性测定光弹性失真值。因此，GaN单晶基板适合 可以获得具有小的特性变化的GaN基半导体器件的制造。

    GALLIUM NITRIDE SUBSTRATE
    8.
    发明申请
    GALLIUM NITRIDE SUBSTRATE 审中-公开

    公开(公告)号：US20200032419A1

    公开(公告)日：2020-01-30

    申请号：US16571599

    申请日：2019-09-16

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： Makoto KIYAMA ,  Ryu HIROTA ,  Seiji NAKAHATA

    IPC分类号： C30B29/40 ,  C30B25/02 ,  C30B29/64

    摘要： A gallium nitride substrate has a surface with a diameter of not less than 100 mm, a difference being not less than 0.1 cm−1 and not more than 2 cm−1 between maximum and minimum values of wave numbers at a maximum peak of peaks corresponding to an E2H phonon mode in micro-Raman scattering mapping measurement at each of square regions having sides each having a length of 2 mm, the square regions being located at a total of five locations including a central location and four circumferential edge locations on the surface of the gallium nitride substrate, a difference being not more than 2 cm−1 between maximum and minimum values of the wave numbers at the maximum peak of the peaks corresponding to the E2H phonon mode at all of measurement points in the five locations.