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公开(公告)号：US10741591B2
公开(公告)日：2020-08-11
申请号：US16283191
申请日：2019-02-22
发明人： Hideki Yagi , Naoko Konishi , Koji Ebihara , Takuya Okimoto
IPC分类号： H01L27/144 , H01L31/0352 , H01L31/0232 , H01L31/105 , H01L31/0304 , H01L31/18 , G02B6/12 , G02B6/13 , G02B6/136
摘要： A semiconductor integrated optical device includes: a supporting base including semi-insulating semiconductor; a first photoelectric convertor having first photodiode mesas; a second photoelectric convertor having second photodiode mesas; a first 90° optical hybrid having at least one first multimode waveguide mesa; a second 90° optical hybrid having at least one second multimode waveguide mesa; an optical divider mesa; first and second input waveguide mesas coupling the first and second 90° optical hybrids with the optical divider mesa, respectively; a conductive semiconductor region disposed on the supporting base, the conductive semiconductor region mounting the first photodiode mesas, the second photodiode mesas, the first multimode waveguide mesas, the second multimode waveguide mesas, and the optical divider mesa; a first island semiconductor mesa extending between the first and second multimode waveguide mesas; and a first groove extending through the first island semiconductor mesa and the conductive semiconductor region to the semi-insulating semiconductor.
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公开(公告)号：US20190267412A1
公开(公告)日：2019-08-29
申请号：US16283191
申请日：2019-02-22
发明人： Hideki Yagi , Naoko Konishi , Koji Ebihara , Takuya Okimoto
IPC分类号： H01L27/144 , H01L31/0352 , H01L31/0232 , H01L31/105 , H01L31/0304 , H01L31/18 , G02B6/136 , G02B6/12 , G02B6/13
摘要： A semiconductor integrated optical device includes: a supporting base including semi-insulating semiconductor; a first photoelectric convertor having first photodiode mesas; a second photoelectric convertor having second photodiode mesas; a first 90° optical hybrid having at least one first multimode waveguide mesa; a second 90° optical hybrid having at least one second multimode waveguide mesa; an optical divider mesa; first and second input waveguide mesas coupling the first and second 90° optical hybrids with the optical divider mesa, respectively; a conductive semiconductor region disposed on the supporting base, the conductive semiconductor region mounting the first photodiode mesas, the second photodiode mesas, the first multimode waveguide mesas, the second multimode waveguide mesas, and the optical divider mesa; a first island semiconductor mesa extending between the first and second multimode waveguide mesas; and a first groove extending through the first island semiconductor mesa and the conductive semiconductor region to the semi-insulating semiconductor.
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公开(公告)号：US09893100B2
公开(公告)日：2018-02-13
申请号：US15193814
申请日：2016-06-27
发明人： Yoshihiro Yoneda , Ryuji Masuyama , Hideki Yagi , Naoko Konishi
IPC分类号： H01L31/0232 , H01L27/144
CPC分类号： H01L27/1446 , G02B6/00 , G02B6/24 , G02B6/42 , H01L31/105 , H01L31/184
摘要： A semiconductor optical device that integrates photodiodes (PDs) and optical waveguides coupling with the PDs and a method of forming the semiconductor optical device are disclosed. The optical waveguides in a portion in the lower cladding layer thereof provides a modified layer that forms a conduction barrier of the lower cladding layer. The modified layer is formed by converting the conduction type thereof or implanting protons therein. The modified layer prevents the electrical coupling between PDs through the waveguides.
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4.发明授权Integrated optical semiconductor device and integrated optical semiconductor device assembly 有权集成光半导体器件和集成光半导体器件组件公开(公告)号：US09366835B2
公开(公告)日：2016-06-14
申请号：US14643951
申请日：2015-03-10
发明人： Ryuji Masuyama , Yoshihiro Yoneda , Hideki Yagi , Naoko Konishi
CPC分类号： G02B6/4274 , G02B6/12004 , G02B6/122 , G02B6/131 , G02B6/136 , G02B6/2813 , G02B6/4204 , G02B6/428 , G02B6/4295
摘要： An integrated optical semiconductor device includes a substrate including first and second regions; a plurality of light receiving devices disposed in the second region; a multimode interference coupler disposed in the first region, the multimode interference coupler including output optical waveguides optically coupled to the corresponding light receiving devices; first and second conductive layers disposed on a back surface of the substrate in the first and second regions, respectively; and a plurality of capacitors disposed in the second region, each of the capacitors including a first electrode connected to one of the light receiving devices and a second electrode connected to the second conductive layer. The second conductive layer is electrically insulated from the first conductive layer. The substrate is made of a semi-insulating semiconductor. The multimode interference coupler and the light receiving devices include the same n-type semiconductor layer disposed on a principal surface of the substrate.
摘要翻译： 一种集成光学半导体器件，包括：包括第一和第二区域的衬底; 设置在所述第二区域中的多个光接收装置; 设置在所述第一区域中的多模干涉耦合器，所述多模干涉耦合器包括光耦合到相应的光接收装置的输出光波导; 分别设置在第一和第二区域中的基板的背面上的第一和第二导电层; 以及设置在第二区域中的多个电容器，每个电容器包括连接到一个光接收装置的第一电极和连接到第二导电层的第二电极。 第二导电层与第一导电层电绝缘。 基板由半绝缘半导体制成。 多模干涉耦合器和光接收装置包括设置在基板的主表面上的相同的n型半导体层。
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公开(公告)号：US09176360B2
公开(公告)日：2015-11-03
申请号：US14331762
申请日：2014-07-15
发明人： Hideki Yagi , Naoko Konishi , Takamitsu Kitamura , Naoya Kono
CPC分类号： G02F1/2257 , G02B6/1228 , G02F2001/212 , G02F2001/217
摘要： A method for producing a spot-size convertor includes the steps of preparing a substrate; forming a stacked semiconductor layer including first and second core layers on the substrate; forming a mesa structure by etching the stacked semiconductor layer using a first mask, the mesa structure including a side surface and a bottom portion of the first core layer; forming a protective mask covering the side surface; etching the bottom portion using the protective mask to form a top mesa; and forming a bottom mesa by etching the second core layer using a second mask. The top mesa includes the first core layer and a portion having a mesa width gradually reduced in a first direction of a waveguide axis. The bottom mesa includes the second core layer and a portion having a mesa width gradually reduced in a second direction opposite to the first direction.
摘要翻译： 一种点尺寸转换器的制造方法包括准备基板的工序; 在所述基板上形成包括第一和第二芯层的层叠半导体层; 通过使用第一掩模蚀刻所述堆叠半导体层来形成台面结构，所述台面结构包括所述第一芯层的侧表面和底部; 形成覆盖所述侧面的保护罩; 使用防护罩蚀刻底部以形成顶部台面; 以及通过使用第二掩模蚀刻所述第二芯层来形成底台面。 顶部台面包括第一芯层和沿波导轴的第一方向逐渐减小的台面宽度的部分。 底部台面包括第二芯层和在与第一方向相反的第二方向上逐渐减小的台面宽度的部分。
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6.发明申请INTEGRATED OPTICAL SEMICONDUCTOR DEVICE AND INTEGRATED OPTICAL SEMICONDUCTOR DEVICE ASSEMBLY 有权集成光学半导体器件和集成光学半导体器件组件公开(公告)号：US20150260933A1
公开(公告)日：2015-09-17
申请号：US14643951
申请日：2015-03-10
发明人： Ryuji Masuyama , Yoshihiro Yoneda , Hideki Yagi , Naoko Konishi
CPC分类号： G02B6/4274 , G02B6/12004 , G02B6/122 , G02B6/131 , G02B6/136 , G02B6/2813 , G02B6/4204 , G02B6/428 , G02B6/4295
摘要： An integrated optical semiconductor device includes a substrate including first and second regions; a plurality of light receiving devices disposed in the second region; a multimode interference coupler disposed in the first region, the multimode interference coupler including output optical waveguides optically coupled to the corresponding light receiving devices; first and second conductive layers disposed on a back surface of the substrate in the first and second regions, respectively; and a plurality of capacitors disposed in the second region, each of the capacitors including a first electrode connected to one of the light receiving devices and a second electrode connected to the second conductive layer. The second conductive layer is electrically insulated from the first conductive layer. The substrate is made of a semi-insulating semiconductor. The multimode interference coupler and the light receiving device include the same n-type semiconductor layer disposed on a principal surface of the substrate.
摘要翻译： 一种集成光学半导体器件，包括：包括第一和第二区域的衬底; 设置在所述第二区域中的多个光接收装置; 设置在所述第一区域中的多模干涉耦合器，所述多模干涉耦合器包括光耦合到相应的光接收装置的输出光波导; 分别设置在第一和第二区域中的基板的背面上的第一和第二导电层; 以及设置在第二区域中的多个电容器，每个电容器包括连接到一个光接收装置的第一电极和连接到第二导电层的第二电极。 第二导电层与第一导电层电绝缘。 基板由半绝缘半导体制成。 多模干涉耦合器和光接收装置包括设置在基板的主表面上的相同的n型半导体层。
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公开(公告)号：US10545285B2
公开(公告)日：2020-01-28
申请号：US16271327
申请日：2019-02-08
发明人： Hideki Yagi , Naoko Konishi
摘要： A hybrid optical assembly includes: a photonic device having a waveguide structure including group IV semiconductor and oxide; and an optical source device including group III-V semiconductor. The source device is bonded to the photonic device. The source device and the waveguide structure are arranged in a direction of a first axis. The source device has a first semiconductor mesa including an upper core layer and a first upper cladding layer and a second semiconductor mesa including a lower core layer and a second upper cladding layer. The first and second semiconductor mesas extend in a direction of a second axis intersecting the first axis. The second semiconductor mesa has a length larger than that of the first semiconductor mesa. The lower core layer, the second upper cladding layer, and the upper core layer and the first upper cladding layer are arranged in the direction of the first axis.
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公开(公告)号：US09103976B2
公开(公告)日：2015-08-11
申请号：US14280043
申请日：2014-05-16
发明人： Ryuji Masuyama , Yoshihiro Yoneda , Hideki Yagi , Naoko Konishi
CPC分类号： G02B6/131 , G02B2006/12173 , G02B2006/12178
摘要： A method for manufacturing a waveguide-type semiconductor device includes the steps of forming an epitaxial structure including a waveguide mesa and a device mesa; forming a mask for selective growth on the epitaxial structure; growing a semiconductor region on an end surface of the device mesa by using the mask for selective growth, the semiconductor region including a side portion having a layer shape and a protruding wall portion; forming an ohmic electrode on a top surface of the device mesa; forming a resin layer on the device mesa and the semiconductor region; forming a resin mask having an opening on the ohmic electrode; forming an electric conductor connecting the ohmic electrode to an electrode pad, the electric conductor passing over the protruding wall portion while making contact with a surface of the resin mask; and removing the resin mask after forming the electric conductor.
摘要翻译： 制造波导型半导体器件的方法包括以下步骤：形成包括波导台面和器件台面的外延结构; 在外延结构上形成用于选择性生长的掩模; 通过使用用于选择性生长的掩模在器件台面的端面上生长半导体区域，该半导体区域包括具有层状的侧部和突出的壁部; 在器件台面的顶表面上形成欧姆电极; 在器件台面和半导体区域上形成树脂层; 形成在所述欧姆电极上具有开口的树脂掩模; 形成将所述欧姆电极与电极焊盘连接的电导体，所述电导体在与所述树脂掩模的表面接触的同时越过所述突出壁部; 并在形成电导体之后去除树脂掩模。
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公开(公告)号：US09023677B2
公开(公告)日：2015-05-05
申请号：US14267556
申请日：2014-05-01
发明人： Naoko Konishi , Hideki Yagi , Ryuji Masuyama , Yoshihiro Yoneda
IPC分类号： H01L21/00 , H01L31/0232 , H01L31/18
CPC分类号： H01L31/02325 , G02B6/12004 , G02B6/131 , G02B6/136 , G02B6/14 , H01L31/02327 , H01L31/035281 , H01L31/105 , H01L31/18 , Y02E10/50
摘要： A method for producing a spot size converter includes the steps of forming a first insulator mask on a stacked semiconductor layer; forming first and second terraces, and a waveguide mesa disposed between the first and second terraces by etching the stacked semiconductor layer using the first insulator mask, the first terrace having first to fourth terrace portions, the second terrace having fifth to eighth terrace portions, the waveguide mesa having first to fourth mesa portions; forming a second insulator mask including a first pattern on the first terrace portion, a second pattern on the fifth terrace portion, a third pattern on the third and fourth mesa portions, and a fourth pattern that integrally covers a region extending from the fourth terrace portion to the eighth terrace portion through the fourth mesa portion; and selectively growing a semiconductor layer by using the second insulator mask.
摘要翻译： 一种制造光斑尺寸转换器的方法包括以下步骤：在堆叠的半导体层上形成第一绝缘体掩模; 形成第一和第二台阶，以及通过使用第一绝缘体掩模蚀刻堆叠的半导体层而设置在第一和第二台阶之间的波导台面，第一平台具有第一至第四平台部分，第二平台具有第五至第八平台部分， 波导台面具有第一至第四台面部分; 在所述第一平台部分上形成包括第一图案的第二绝缘体掩模，所述第五平台部分上的第二图案，所述第三和第四台面部分上的第三图案，以及一体地覆盖从所述第四平台部分延伸的区域的第四图案 通过第四台面部分到达第八台阶部分; 以及通过使用第二绝缘体掩模选择性地生长半导体层。
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公开(公告)号：US09366820B2
公开(公告)日：2016-06-14
申请号：US14267534
申请日：2014-05-01
发明人： Naoko Konishi , Yutaka Onishi
CPC分类号： G02B6/2813 , G02B6/28 , H04B10/00
摘要： A coherent mixer includes a multi-mode waveguide that has a side surface and an end; a waveguide group including a plurality of semiconductor regions connected to the end; a first semiconductor region that has a side surface extending substantially parallel to the side surface of the multi-mode waveguide; and an external semiconductor region having a side surface extending substantially parallel to an edge of the waveguide group. The side surface of the semiconductor region is spaced apart from the side surface of the multi-mode waveguide by a distance smaller than or equal to a reference value. The side surface of the external semiconductor region is spaced apart from the edge of the waveguide group by a distance smaller than or equal to the reference value. The reference value is a maximum value of distances between arbitrary adjacent semiconductor regions in the waveguide group.
摘要翻译： 相干混频器包括具有侧表面和末端的多模波导; 包括连接到所述端部的多个半导体区域的波导组; 第一半导体区域，其具有基本上平行于所述多模波导的侧表面延伸的侧表面; 以及具有基本上平行于波导组的边缘延伸的侧表面的外部半导体区域。 半导体区域的侧表面与多模波导管的侧表面间隔一个小于或等于参考值的距离。 外部半导体区域的侧表面与波导组的边缘隔开距离小于或等于基准值。 参考值是波导组中任意相邻的半导体区域之间的距离的最大值。
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